MSM514256 Search Results

MSM514256C

Abstract: DIP20-P-300-2 MSM514256CL
Contextual Info: E2G0010-17-41 ¡ Semiconductor MSM514256C/CL ¡ Semiconductor This version: Jan. 1998 MSM514256C/CL Previous version: May 1997 262,144-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: O K I semiconductor MSC2329-xxYS3KS3_ 262,144 Word BY 9 Bit DYNAMIC RAM MODULE : PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2329-xxYS3/KS3 is a fully decoded, 262,144 word x 9 bit dynamic random access memory composed of two 1 Mb DRAMs in SOJ MSM514256AJS and one 256Kb DRAM in PLCC

OF100

Abstract: MSM514256 MSM514256CL ZIP20-P-400 msm514256c
Contextual Info: O K I Sem iconductor MSIVI514256C /C L_ 262,144-W ord x 4-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256C/CL is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM514256C/CL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM514256C/CL is

mx232

Abstract: YS2 100 a 741 j
Contextual Info: 4bE D • b724E4Q HOKIJ O K I semiconductor MSC2328A-XX YS2/KS2 T - 262,144 BY 8 BIT DYNAMIC RAM MODULE O K I SEMI CONDUCTOR GROUP GENERAL DESCRIPTION The Oki MSC2328A-XX YS2/KS2 is a fully decoded, 262,144 w o rd sx8 bit CMOS dynamic random access memory composed of two 1Mb DRAMs in SOJ MSM514256AJS . The mounting of two SOJs

Contextual Info: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2320B-xxYS9/DS9 is a fully decoded 262,144-word x 36-bit CMOS Dynamic Random Access Memory Module . It is composed of eight 1-Mb DRAMs in SOJ MSM514256B packages, and four 256Kb

Contextual Info: SâE D • b72M2MD 0 0 1 2 7 ^ 0 0 K I SEI 1I C0NPUCT0R 344 I0K IJ GROUP O K I semiconductor_ ' MSM514256A 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM514256A is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256A is OKI’s CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSC2327B-XXYS8/DS8 262,144-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2327B-xxYS8/DS8 is a fully decoded 262,144-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 1-Mb DRAMs in SOJ MSM514256B packages mounted with eight

Contextual Info: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 2321B-xxY S18/D S18 is a fully decoded 524,288-w ord x 36-bit CM OS Dynamic Random Access M em ory M odule composed of sixteen 1-Mb DRAM s in SOJ MSM514256B packages and eight

Contextual Info: OKI semiconductor MSC2333A-XXYS16_ 524,288 Word BY 32 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE GENERAL DESCRIPTION The Oki MSC2333A-xxYS16 is a fully decoded, 524,288 word x 32 bit CMOS dynamic random access memory composed of sixteen 1 Mb DRAMs in SOJ MSM514256AJS . The mounting of

DRAMs

Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Contextual Info: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP

Contextual Info: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/D S18 is a fully decoded 524,288-w ord x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 1-Mb DRAMs in SOJ MSM514256B packages and eight

Contextual Info: MB81C4256-10PSZ IL00 * C-MOS 1M 262, 144 X 4 -BIT DYNAMIC RAM -SIDE VIEW- 1 2 GND 4 5 6 3 OE CAS D3 D4 7 *NC 9 10 11 8 D1 D2 WE RAS 12 13 14 16 17 18 19 20 12 13 14 15 A0 A1 A2 A3 *NOTE 11 VDD (+5V) 16 17 18 19 20 A4 A5 A6 A7 A8 ; PIN 10 OF MSM514256B/BL SERIES

YS2 100

Contextual Info: OKI semiconductor MSC2328A-XX YS2/KS2 262,144 BY 8 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2328A-XX YS2/KS2 is a fully decoded, 262,144 words x 8 bit CMOS dynamic random access memory composed o f tw o 1Mb DRAMs in SOJ MSM514256AJS . The mounting of tw o SOJs

Contextual Info: O K I semiconductor MSM514256B/BL 262,144-W ord x 4-Bit DYNAMIC RAM GENERAL DESCRIPTION The MSM514256B/BL is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the MSM514256B/BL is OKI's CMOS silicon gate process technology.

met esso

Contextual Info: O K I Semiconductor MSC2327B-XXYS8/DS8 262,144-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2327B-xxYS8/ DS8 is a fully decoded 262,144-word x 32-bit CMOS Dynamic Random Access Memory M odule composed of eight 1-Mb DRAMs in SOJ MSM514256B packages mounted with eight

FZJ 105

Abstract: "30 pin socket"
Contextual Info: O K I sem iconductor MSC2330A-XXYS4/KS4_ 5 2 4 ,2 8 8 Word BY 8 Bit DYNAM1C RAM MODULE : FAST PAGE MODE TYPE GENERAL DESCRIPTION T he O ki M SC 2330A-xxYS4/KS 4 is a fu lly decoded, 524,288 word x 8 b it CMOS dynam ic random access memory com posed of fo u r 1Mb DRAMs in SOJ MSM514256AJS . T he m ounting of four SOJs

Contextual Info: O K I Semiconductor MSC2322B-XXYS20/DS20 524,288-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 2322B-xxY S20/D S20 is a fully decoded 524,288-word x 40-bit CM OS D ynam ic Random Access M em ory Module composed of twenty 1-Mb DRAM s in SOJ MSM514256B packages mounted

514256

Abstract: 514256-10 MSM514256 MSM514256-10 MSM514256-12 oki msm51426 A2E3
Contextual Info: O K I SEMICO ND UC T OR GROUP IDE D £ b?5M5MD Q0Q4E02 7 £ Q 5C B sennlcoicfltactog* MSM514256RS/JS/ZS 262,144-WORD X , -r-4L-x*-n _ 4-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM514256 is a new generation dynamic RAM organized as 262,144 words by 4 bits. The technology

SC2330B

Abstract: SC2330
Contextual Info: O K I Semiconductor MSC2330B-XXYS4/KS4 524,288-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2330B-xxYS4/KS4 is a fully decoded 524,288-word x 8-bit CMOS Dynamic Random Access Memory Module composed of four 1-Mb DRAMs in SOJ MSM514256B packages mounted with four

msm514260c

Abstract: MSM514256C edo 16m x 32
Contextual Info: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~

sc2322

Contextual Info: O K I Semiconductor MSC2322B-XXYS20/PS20 524,288-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2322B-xxYS20/DS20 is a fully decoded 524,288-word x 40-bit CMOS Dynamic Random Access Memory Module composed of twenty 1-Mb DRAMs in SOJ MSM514256B packages mounted

Contextual Info: O K I Semiconductor MSC2327B-XXYS8/DS8 262,144-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC2327B-xxYS8/DS8 is a fully decoded 262,144-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 1-Mb DRAMs in SOJ MSM514256B packages mounted with eight