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Toshiba America Electronic Components MT4S300U(TE85L,O,F X34 PB-F RADIO-FREQUENCY SIGE HE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT4S300U(TE85L,O,F	Cut Tape	8,870		1	1 $0.76 10 $0.581 100 $0.4476 1000 $0.35673 10000 $0.35673	Buy Now
	MT4S300U(TE85L,O,F	Digi-Reel	8,870		1	1 $0.76 10 $0.581 100 $0.4476 1000 $0.35673 10000 $0.35673	Buy Now
	MT4S300U(TE85L,O,F	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.32508	Buy Now
Chip One Stop	MT4S300U(TE85L,O,F	Cut Tape	475			1 - 10 $0.557 100 $0.429 1000 $0.406 10000 $0.406	Buy Now
Cornell Dubilier Electronics Inc DMT4S1K-F CAP FILM 10000PF 10% 400VDC RAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DMT4S1K-F	Bulk	479		1	1 $3.03 10 $1.985 100 $1.4312 1000 $1.13586 10000 $1.01559	Buy Now
Mouser Electronics	DMT4S1K-F		371			1 $2.34 10 $1.46 100 $1.16 1000 $1 10000 $0.953	Buy Now
Newark	DMT4S1K-F	Bulk	27,500		500	1 - 10 - 100 - 1000 $1.2 10000 $1.07	Buy Now
Bristol Electronics	DMT4S1K-F		240			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	DMT4S1K-F	Bulk	7,000		500	1 - 10 - 100 - 1000 $0.99 10000 $0.99	Buy Now

Master Electronics	DMT4S1K-F					1 - 10 - 100 $1.46 1000 $0.989 10000 $0.849	Buy Now
Altech Corporation CMT4S MINI FEED-THROUGH TERM W/TAB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMT4S	Bulk			50	1 - 10 - 100 $1.409 1000 $1.409 10000 $1.409	Buy Now
Mouser Electronics	CMT4S					1 $2.96 10 $1.68 100 $1.52 1000 $1.23 10000 $1.17	Get Quote
Newark	CMT4S	Bulk			50	1 $2.37 10 $2.37 100 $1.94 1000 $1.55 10000 $1.55	Buy Now
RS	CMT4S	Bulk		11 Weeks	50	1 - 10 - 100 $1.41 1000 $1.13 10000 $1.13	Get Quote
TestEquity LLC	CMT4S					1 $1.73 10 $1.73 100 $1.73 1000 $1.73 10000 $1.73	Buy Now
IndustrialeMart TK4M-T4SR TEMP CONTROL SSR RELAY 100-240V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK4M-T4SR	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IndustrialeMart TK4M-T4SN TEMP CONTROL SSR 100-240VAC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK4M-T4SN	Box			1	1 $183 10 $183 100 $183 1000 $183 10000 $183	Buy Now

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MT4S Datasheets (43)

Part	Manufacturer	Description	Datasheet Type	PDF
MT4S03A	Toshiba		Scan	PDF
MT4S03A	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE	Scan	PDF
MT4S03AU	Toshiba		Scan	PDF
MT4S03AU	Toshiba	Transistor Silicon NPN Epitaxial Planar Type	Scan	PDF
MT4S03BU	Toshiba	Transistors	Original	PDF
MT4S03BU	Toshiba	Japanese - Transistors	Original	PDF
MT4S04A	Toshiba		Scan	PDF
MT4S04A	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE	Scan	PDF
MT4S04AU	Toshiba		Scan	PDF
MT4S04AU	Toshiba	Transistor Silicon NPN Epitaxial Planar Type	Scan	PDF
MT4S06	Toshiba		Scan	PDF
MT4S06	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE	Scan	PDF
MT4S06U	Toshiba		Scan	PDF
MT4S06U	Toshiba	Transistor Silicon NPN Epitaxial Planar Type	Scan	PDF

MT4S07	Toshiba		Original	PDF
MT4S07U	Toshiba	VHF~UHF Band Low Noise Amplifier Applications	Original	PDF
MT4S100T	Toshiba	UHF LOW NOISE AMPLIFIER APPLICATION	Original	PDF
MT4S100U	Toshiba	High-frequency SiGe Heterojunction Bipolar Transitor	Original	PDF
MT4S101T	Toshiba	High-frequency SiGe Heterojunction Bipolar Transitor	Original	PDF
MT4S101U	Toshiba	High-frequency SiGe Heterojunction Bipolar Transitor	Original	PDF

MT4S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
PH ON 823 Abstract: MT4S101U PH ON 823 m mje 346 Text: M T 4 S 1 0 1 U SPICE2G6 model parameters NETLIST .SUBCKT MT4S101U CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LWC 1 6 LWS 4 7 CC 1 3 Ll1 7 8 Ll2 7 9 CBC 1 2 CBS 2 9 CCS 1 9 CES 3 9 Dsub 8 6 Q1 6 5 4 +AREA = .MODEL csub +IS = +N = +BV = +IBV = +CJO = +VJ =	Original	MT4S101U PH ON 823 MT4S101U PH ON 823 m mje 346	PDF
Untitled Abstract: No abstract text available Text: MT4S300T 東芝トランジスタシリコンゲルマニウムＮＰＮエピタキシャルプレーナ型 MT4S300T 単位: mm ○ UHF～SHF 帯低雑音増幅用 1.2±0.05 0.9±0.05 • 高利得です。:\|S21e\|2=18dB 標準 (@f=2GHz) • 高静電破壊耐量:2kV 以上(HBM 法)	Original	MT4S300T	PDF
Untitled Abstract: No abstract text available Text: MT4S102U TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102U UHF-SHF Low Noise Amplifier Application Unit: mm 2.1±0.1 FEATURES 3 1 2 0.2+0.1 –0.05 1 0~0.1 P8 0.15±0.05 4 +0.05 0.95 –0.15 Marking 3 High Gain:\|S21e\|2=15.0dB @f=2GHz	Original	MT4S102U	PDF
Untitled Abstract: No abstract text available Text: MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.55dB Typ. (@f = 2GHz) • High Gain: \|S21e\|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)	Original	MT4S24U	PDF
Untitled Abstract: No abstract text available Text: MT4S101U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101U UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 2.1±0.1 FEATURES 1 7 0.2 +0.1 –0.05 4 3 0～0.1 P Type name +0.05 0.95 –0.15 2 0.15±0.05 Marking 1 High Gain:\|S21e\|2=16.0dB @f=2GHz	Original	MT4S101U	PDF
Untitled Abstract: No abstract text available Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 3 P6 1 Absolute Maximum Ratings Ta = 25°C 0.8±0.05 TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage	Original	MT4S100T	PDF
Untitled Abstract: No abstract text available Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 Features 3 P6 1 Absolute Maximum Ratings Ta = 25°C 0.8±0.05 TESQ Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage	Original	MT4S100T	PDF
Untitled Abstract: No abstract text available Text: MT4S104U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S104U UHF-SHF Low Noise Amplifier Application Unit:mm 2.1±0.1 FEATURES 2 1 0.2+0.1 –0.05 3 High Gain:\|S21e\|2=10.0dB @f=5.2GHz 4 • 2.0±0.2 Low Noise Figure :NF=1.25dB (@f=5.2GHz)	Original	MT4S104U	PDF
MT4S03A Abstract: No abstract text available Text: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	MT4S03A MT4S03A	PDF
Untitled Abstract: No abstract text available Text: MT4S102T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S102T UHF-SHF Low Noise Amplifier Application Unit:mm 1.2±0.05 FEATURES 0.52±0.05 4 3 P8 1 1. Collector 2. Emitter 3. Base 4. Emitter 2 TESQ Maximum Ratings Ta = 25°C Characteristics	Original	MT4S102T	PDF
MT4S06U Abstract: No abstract text available Text: MT4S06U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S06U VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: \|S21e\|2 = 11.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm	Original	MT4S06U MT4S06U	PDF
MT4S03 Abstract: No abstract text available Text: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	MT4S03AU MT4S03	PDF
Untitled Abstract: No abstract text available Text: MT4S100T TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT4S100T UHF Low Noise Amplifier Application Unit:mm 1.2±0.05 4 3 1.2±0.05 2 0.2±0.05 High Gain:\|S21e\| =17.0dB @f=2GHz 1 • 2 Low Noise Figure :NF=0.72dB (@f=2GHz) 0.8±0.05 •	Original	MT4S100T	PDF
MT4S100U Abstract: No abstract text available Text: MT4S100U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100U UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 2.1±0.1 FEATURES 1.25±0.1 • Low Noise Figure :NF=0.72dB @f=2GHz · High Gain:\|S21e\| =16.0dB (@f=2GHz) 1 Type name +0.05 0.95 –0.15	Original	MT4S100U MT4S100U	PDF

MT4S24U Abstract: No abstract text available Text: MT4S24U 東芝トランジスタシリコンNPNエピタキシャルプレーナ形 MT4S24U 単位: mm ○ VHF~UHF 帯低雑音増幅用 • 雑音特性が優れています。: NF = 1.55dB 標準 (@f = 2 GHz) • 利得が高い。:\|S21e\|2 = 11.5dB(標準) (@f = 2 GHz)	Original	MT4S24U 20mmx25mmx1 55mmt) MT4S24U	PDF
MT4S24U Abstract: MT4S 42GA Text: MT4S24U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S24U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.55dB Typ. (@f = 2GHz) • High Gain: \|S21e\|2 = 11.5dB(Typ.) (@f = 2 GHz) Absolute Maximum Ratings (Ta = 25°C)	Original	MT4S24U MT4S24U MT4S 42GA	PDF
MT4S03A Abstract: No abstract text available Text: MT4S03A Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics	Original	MT4S03A MT4S03A	PDF
MT4S03AU Abstract: No abstract text available Text: TO SH IBA MT4S03AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S03AU Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz 1.25 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	MT4S03AU MT4S03AU	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A TENTATIVE MT4S04U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT 4 S 0 4 U V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise : Figure : NF = 1.2 dB • High Gain : Gain = 13.5 dB f = 1 GHz M A Y I M I I M R A T I N E ( Ta = 5 W 1	OCR Scan	MT4S04U	PDF
MT4S03U Abstract: No abstract text available Text: T O SH IB A TENTATIVE MT4S03U TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MTA<;n3ii V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	MT4S03U MT4S03U	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A TENTATIVE MT4S03 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT4S03 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 9 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	MT4S03	PDF
Untitled Abstract: No abstract text available Text: M ICRON 128K X MT4S1288 8 SRAM MODULE 128Kx 8 SRAM SRAM MODULE FEATURES • High speed: 20*, 25 and 30ns • High-performance, low-power CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions • All inputs and outputs are TTL compatible	OCR Scan	MT4S1288 128Kx 32-Pin MT4S1288D-20	PDF
Untitled Abstract: No abstract text available Text: MT4S12832 128K X 32 SRAM M OD ULE jV U G IR O N 128Kx 32 SRAM SRAM MODULE FEATURES • High speed: 15*, 20,25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process _ • Single +5V ±10% power supply • Easy memory expansion with CE and OE functions	OCR Scan	MT4S12832 512KB 128Kx 64-Pin S12832 MT4S12B32	PDF
MT4S04AU Abstract: No abstract text available Text: TO SH IBA MT4S04AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT4S04AU Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • • 1.25 ±0.1 Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 13.5 dB f = 1 GHz m a v ì m i i m R A TiM r;«; r r a	OCR Scan	MT4S04AU MT4S04AU	PDF

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MT4S Price and Stock

Toshiba America Electronic Components MT4S300U(TE85L,O,F

Cornell Dubilier Electronics Inc DMT4S1K-F

Altech Corporation CMT4S

IndustrialeMart TK4M-T4SR

IndustrialeMart TK4M-T4SN

MT4S Datasheets (43)

MT4S Datasheets Context Search

PH ON 823

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MT4S03A

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MT4S06U

MT4S03

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MT4S100U

MT4S24U

MT4S24U

MT4S03A

MT4S03AU

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MT4S03U

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MT4S04AU