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    Untitled

    Abstract: No abstract text available
    Text: u ild R O N 16K MT58C1616 16 SYNCHRONOUS SRAM X 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS I FEATURES • • • • Fast access times: 12,15, 20 and 25ns Fast OE: 5 , 6 , 8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power


    OCR Scan     		PDF MT58C1616 52-Pin

    Untitled

    Abstract: No abstract text available
    Text: MICRON 16K SYNCHRONOUS SRAM X MT58C1618 18 SYNCHRONOUS SRAM 16K X 18 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • Fast access times: 12,15, 20 and 25ns Fast OE: 5 , 6 , 8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power


    OCR Scan     		PDF MT58C1618 52-Pin MT58C1616

    5550H

    Abstract: Bos 6K
    Text: MICRON TECHNOLOGY INC SSE D • b l l l S 4 cî GOGS'ìb'l TS7 URN MT58C1618 DIE 1ÔK X ¡8 SYNCHRONOUS SRAM f f lI C R D M MILITARY SRAM DIE 16K X 18 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • DIE OUTLINE Top View Fast access times: 20,25 and 35ns


    OCR Scan     		PDF MT58C1618 5550H Bos 6K

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N 16K X MT58C1618 18 SYNCHRONOUS SRAM 16K X 18 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • PIN ASSIGNMENT Top View Fast access times: 12,15, 20 and 25ns Fast OE: 5, 6, 8 and 10ns Single +5V ±10% power supply


    OCR Scan     		PDF MT58C1618 52-Pin MT5flC1618

    synchronous sram

    Abstract: mt58c1289dj MT58C1289
    Text: v/iic z r o n MT58C1289 128K X 9 SYNCHRONOUS SRAM 128K x 9 SRAM SYNCHRONOUS SRAM FULLY REGISTERED INPUTS AND OUTPUTS FEATURES Timing specific to SPARC microprocessor Fast access times: 16.6 and 20ns Fast clock to data valid: 10ns Single +5V ±10% power supply


    OCR Scan     		PDF MT58C1289 32-Pin synchronous sram mt58c1289dj

    Mil-Std-883 Wire Bond Pull Method 2011

    Abstract: No abstract text available
    Text: AUSTIN SEMICONDUCTOR INC büE D • TG02117 0000375 ifl? H A U S T 1 MT58C1616 DIE 16K X 16 SYNCHRONOUS SRAM | u iic = n o N - ■ ' P M W . ' ì - ' S MILITARY SRAM DIE 16Kx 16 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES •


    OCR Scan     		PDF TG02117 MT58C1616 Mil-Std-883 Wire Bond Pull Method 2011

    jc 817

    Abstract: ir 0588 0588 N1H1
    Text: niCRON SEMICONDUCTOR INC b?E hi 1 1 5 ^ D 000^7^3 MRN S11A I 128K X 9 SRAM DIE | M IC R O N SEMICONDUCTOR tSC M 073 • SRAM DIE 128K X 9 SRAM Asynchronous MT5C1189S11A and Synchronous (MT58C1289S11A) GENERAL PHYSICAL SPECIFICATIONS • Wafer thickness = 18.5 mils ±0.5 mils


    OCR Scan     		PDF MT5C1189S11A) MT58C1289S11A) 150mm jc 817 ir 0588 0588 N1H1

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEM ICO NDUCTOR INC M IC R O b7E D • b l l l S ^ □□□'ÌS31 TbM ■ URN MT58C1289 128K X 9 SYNCHRONOUS SRAM N SYNCHRONOUS 128K x 9 SRAM CD AM o n A M VI FULLY REGISTERED INPUTS AND OUTPUTS FEATURES Timing specific to SPARC microprocessor Fast cycle times: 12,16.6 and 20ns


    OCR Scan     		PDF MT58C1289 access/12ns access/16 MT5BC12B9 MT56C1269

    jmicron

    Abstract: MT58C1
    Text: SSE D MICRON TECHNOLOGY INC IC R O N • b l l i s m 0005^53 LIT 16K X IPIRN MT58C1616 DIE 16 SYNCHRONOUS SRAM -T MILITARY SRAM DIE 16Kx 16 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • • • • Fast access times: 20,25 and 35ns


    OCR Scan     		PDF MT58C1616 jmicron MT58C1

    synchronous sram

    Abstract: 05t cr
    Text: MICRO N T E C H N O L O G Y INC S5E D M IC R O N • b i l l 54*1 D D D 3 b 3 T 7T2 « M R N 128K X MT58C1289 9 SYNCHRONOUS SRAM 128K X 9 SRAM SYNCHRONOUS SRAM FULLY REGISTERED INPUTS AND OUTPUTS FEATURES Timing specific to SPARC microprocessor Fast access times: 16.6 and 20ns


    OCR Scan     		PDF MT58C1289 32-Pin MT6BC1289 MT56C1289 synchronous sram 05t cr

    MT58C161B

    Abstract: No abstract text available
    Text: I^ IC R O N MT58C1618 SYNCHRONOUS SRAM 16K X 18 SRAM I WITH CLOCKED, REGISTERED INPUTS • • • • • • • • Fast access times: 15, 17, 20 and 25ns Fast O utput Enable: 6, 7, 8 and 10ns S in gle+5V ±10% pow er supply Separate, electrically isolated output buffer pow er


    OCR Scan     		PDF MT58C1618 52-Pin MT58C1618 MT53Cl5ie MT58C161B

    LT 5251

    Abstract: synchronous sram wns marking
    Text: MICRON 16K MT58C1616 16 SYNCHRONOUS SRAM X 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • Fast access times: 12,15,20 and 25ns Fast OE: 5, 6, 8 and 10ns Single +5V ±10% power supply Separate, electrically isolated output buffer power


    OCR Scan     		PDF MT58C1616 52-Pin LT 5251 synchronous sram wns marking

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE » M IC R O N • blllSMT OQG3b4T b31 H M R N MT58C1616 16K X 16 SYNCHRONOUS SRAM 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • • • • Fast access times: 12,15,20 and 25ns Fast OE: 5,6,8 and 10ns


    OCR Scan     		PDF MT58C1616 52-Pin DQ10C DQ12C DQ14C DQ15C DQ16C

    el 803

    Abstract: No abstract text available
    Text: A U S T IN SEMICONDUCTOR IN C hQZ D T 0 0 5 1 1 7 OOGOS^O 1R3 « A U S T M T 5 8 C 1 6 1 8 D IE 1 6K X 18 S Y N C H R O N O U S S R A M MICRON T MILITARY SRAM DIE 4 f c - Z .V & 16K x 18 SRAM WITH CLOCKED, REGISTERED INPUTS FEATURES • • • • • •


    OCR Scan     		PDF MT58C161B el 803

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 7 36E D • b l l l S M 11! 0 0 0 2 ^ 2 1 , pi h i i in11 jjgiy iip.j“1v .ut*. w j' i. w - mT Wjgri 1 HHRN ADVANCE 11 7 = V 6 > 2 3 -W 16K X 18 SRAM SYNCHRONOUS SRAM W ITH CLOCKED, REGISTERED INPUTS >V >.-. < FEATURES • • • •


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: • h ÉidMiuiilBHááttaSflÉ BflE D MICRON TECHNOLOGY INC b llIS H T G G O E Tll =i ■ MRN ADVANCE ÉtaB*6â*ù^ÂeeÂfcâi - uMMüff T4C-2Z-/< 16K X 16 SRAM SYNCHRONOUS SRAM W ITH CLOCKED, REGISTERED INPUTS FEATURES • • • • OPTIONS MARKING « Timing


    OCR Scan     		PDF DQ12C DQ13C DQ14C 52-pin

    AAA1M304

    Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
    Text: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188


    OCR Scan     		PDF CY7C106 CY7C185 AS7C1028 AS7C164 AS7C259 AS7C256 AS7C1024 AAA1M304 tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE |U|ICRON M T58C 1289 FULLY REGISTERED INPUTS AND OUTPUTS FEATURES • • • • • • • • Timing specific to SPARC'"' microprocessor Fast access times: 16.6 and 20ns Fast clock to data valid: 10ns Single +5V ±10% power supply READ data and WRITE data registers


    OCR Scan     		PDF 32-Pin MT58C12S& T58C1289 MT58C1289

    T58C

    Abstract: No abstract text available
    Text: |U |IC R O N M T58C 1616 16K x 16 SRAM SYNCHRONOUS SRAM WITH CLOCKED, REGISTERED INPUTS • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 1 5 ,1 7 ,2 0 and 25ns Fast O utput Enable: 6, 7, 8 and 10ns Single +5V ± 1 0 % pow er supply


    OCR Scan     		PDF 52-Pin MT58C16I6 T58C

    mt42C4256z

    Abstract: MT4C1024DJ
    Text: ADVANCE M IC R O N • MT4C10016/7 Tí CMNCX ClGV INC DRAM 16 MEG x 1 DRAM FAST PAGE MODE: MT4C10016 STATIC COLUMN: MT4C10017 FEATURES • Industry standard xl pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single power supply: +5V±10% or +3.3V±10%


    OCR Scan     		PDF MT4C10016/7 250mW 4096-cycle MT4C10016 MT4C10017 24-Pin 120ns MT4C1024DJ 100ns mt42C4256z