Contextual Info: p ilC R O N MT5C1601 SRAM 16K X 1 SRAM • H igh speed: 8, 10, 12, 15, 20, 25 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ± 1 0 ^ pow er supply • Easy m em ory expansion w ith CE option • All inputs and outputs are TTL com patible

WT6C

Contextual Info: HKRON TECHNOLOGY INC 5SE D b l l l S H I 0D03332 b'iS • MRN ' T T4 k -2 3 -0 5 MT5C1601 16K X 1 SRAM v u c z n o N SRAM 16K X 1 SRAM PIN ASSIGNMENT (Top View • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process

Contextual Info: |v iic n o N IT AT XT S P E C IFIC A T IO N 16K S R A M FAM ILY ABSOLUTE MAXIMUM RATINGS* “Stresses greater than those listed under "Absolute Maxi­ m um Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the

Contextual Info: | V > llC R O I\ J 16K M T5C 1601 X 1 SRAM 16K X 1 SRAM SRAM PIN ASSIGNMENT Top View • High speed: 8’ , 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

mt5c1601

Abstract: mt5c1601dj12
Contextual Info: M T5 C1 601 16K X 1 SRAM |v iic n o N SRAM 16K X 1 SRAM PIN ASSIGNMENT Top View • High speed: 9 ,1 0 ,1 2 ,1 5 , 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE option

UPD4311C

Abstract: MT5C1601 upd4311 MK41H67-35 MT5C1601-25 MT5C1601-30 V61C67P-25 V61C67P-25L V61C67P-35
Contextual Info: - 16 K X m MK41H67-35 « a £ THOMSON PC TAAC max ns) TCAC max (ns) A CMOS •f- > TOE nax rain TOH (ns) (ns) TOD max (ns) 9 TWP rain S t a t i c R A M (1 6 3 8 4 x 1 ) # TDS (ns) (lili (ns) TDH TWD V D D or V C C min TffR nax min (ns) (ns) (ns) (V) 2 0 P I N

Contextual Info: IT/AT/XT SPECIFICATIO N 16K SR A M FAMILY MICRON ABSOLUTE MAXIMUM RATINGS* “Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not

Contextual Info: niCRON M SEMICONDUCTOR I C R O I INC b7E ] • blllSHT N □ □□TSD'i 67S ■ M T5 C 1601 1 6 K X 1 SRA M SfriCONDUCTOR INC. SRAM 16K X 1 SRAM PIN ASSIGNMENT Top View) • High speed: 9 ,1 0 ,1 2 ,1 5 , 20 and 25ns • High-perform ance, low -pow er, CM OS double-metal