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United Chemi-Con Inc MVK50VC47RM8X10TP Capacitor,47Uf,50Vdc,20-% Tol,20+% Tol \|Chemi-Con MVK50VC47RM8X10TP
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MVK50VC47RM8X10 Datasheets Context Search

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Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF6P9220H MRF6P9220HR3	PDF
th 2190 Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101 Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101	PDF
tantulum capacitor Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance	Original	MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955	PDF
NIPPON CAPACITORS Abstract: j668 Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 NIPPON CAPACITORS j668	PDF
j1303 Abstract: CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 j2479 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805	Original	MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 j1303 CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 j2479	PDF
capacitor 1825 Abstract: Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085H capacitor 1825 Nippon capacitors	PDF
k 2645 MOSFET Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22	PDF
K 2645 schematic Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H	PDF
j6808 Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27050HR3 MRF6S27050HSR3 J7-73 Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 0, 11/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to	Original	MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 j6808 A114 A115 AN1955 C101 JESD22 MRF6S27050HSR3 J7-73 Nippon capacitors	PDF
MVK35VC Abstract: MVK Series MVK50VCR33MD55TP MVK50VC1R0MD55TP MVK50VC10RMF55TP MVK50VC2R2MD55 MVK35VC22RMF55TP MVK35V MVK35VC10RME55TP MVK50VC47RM8X10TP Text: MVK SURFACE MOUNT-105؇C MVK Series Ⅲ Surface Mount Ⅲ Low Profile Vertical Chip Ⅲ Solvent Proof Ⅲ ‫؀‬105؇C Maximum Temperature Actual Size The MVK series capacitors are the standard vertical chip capacitors designed for reflow soldering. The maximum height for most of these capacitors is 5.5mm, making them ideal for use in low	Original	MOUNT-105C MVK50VC1R0MD55 MVK50VC47RM8X10 MVK35VC221M10X10 MVK35VC22RMF55 at20C) MVK35VC MVK Series MVK50VCR33MD55TP MVK50VC1R0MD55TP MVK50VC10RMF55TP MVK50VC2R2MD55 MVK35VC22RMF55TP MVK35V MVK35VC10RME55TP MVK50VC47RM8X10TP	PDF
465B Abstract: A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HSR3 Nippon capacitors Nippon chemi	PDF
K 2645 schematic circuit Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic circuit DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H	PDF
J4-24 Abstract: 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 capacitor mttf Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 2, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 J4-24 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HSR3 capacitor mttf	PDF
MVK35VC Abstract: MVK6.3VC102M10X10TP MVK35VC221M10X1 MVK50VC22RM8X6TP MVK Series MVK50VC1R0MD55TP MVK50VC2R2MD55TP Text: MVK SURFACE MOUNT-105؇C MVK Series Ⅲ Surface Mount Ⅲ Low Profile Vertical Chip Ⅲ Solvent Proof Ⅲ ‫؀‬105؇C Maximum Temperature Actual Size The MVK series capacitors are the standard vertical chip capacitors designed for reflow soldering. The maximum height for most of these capacitors is 5.5mm, making them ideal for use in low	Original	MOUNT-105 MVK50VC1R0MD55 MVK35VC22RMF55 at20C) MVK50VC47RM8X10 MVK35VC221M10X10 MVK35VC MVK6.3VC102M10X10TP MVK35VC221M10X1 MVK50VC22RM8X6TP MVK Series MVK50VC1R0MD55TP MVK50VC2R2MD55TP	PDF

A114 Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors Text: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 A114 A115 AN1955 JESD22 MRF6S27085H MRF6S27085HSR3 Nippon capacitors	PDF
Nippon capacitors Abstract: Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 MRF6S19140H Nippon capacitors Nippon chemi	PDF
Nippon capacitors Abstract: Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 MRF6S19140H Nippon capacitors Nippon chemi	PDF
Nippon capacitors Abstract: Nippon chemi Text: Freescale Semiconductor Technical Data MRF6S19140H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors Nippon chemi	PDF
NIPPON CAPACITORS Abstract: MRF6S19140HR3 GRM55DR61H106KA88B Nippon chemi z9b1 GRM55DR61H106KA88B 10 uF Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	88onductor MRF6S19140HR3 MRF6S19140HSR3 NIPPON CAPACITORS GRM55DR61H106KA88B Nippon chemi z9b1 GRM55DR61H106KA88B 10 uF	PDF
th 2190 Abstract: NIPPON CAPACITORS 400S A114 A115 C101 JESD22 MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110	Original	MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 NIPPON CAPACITORS 400S A114 A115 C101 JESD22 MRF6S21050L MRF6S21050LSR3	PDF
865 RF transistor Abstract: transistor z9 UT-141A-TP J707 NIPPON CAPACITORS zo 107 600B AN1955 JESD22-A114 MRF6P9220HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 1, 11/2005 RF Power Field Effect Transistor N -Channel Enhancement-Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF6P9220H MRF6P9220HR3 865 RF transistor transistor z9 UT-141A-TP J707 NIPPON CAPACITORS zo 107 600B AN1955 JESD22-A114 MRF6P9220HR3	PDF
J698 Abstract: NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P9220HR3 Nippon chemi Text: Document Number: MRF6P9220H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF6P9220H MRF6P9220HR3 J698 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P9220HR3 Nippon chemi	PDF
Untitled Abstract: No abstract text available Text: SURFACE MOUNT-105°C MVK Series .1 . 1 1 . 1 t ' f c ' + 1 * • : ■>. * i * Surface Mount * i + . * T <■: + 1 - * ,.■+■■* t i i i - tar* Low Profile Vertical Chip Solvent Proof +105°C Maximum Temperature The MVK series capacitors are the standard vertical chip capacitors designed for reflow soldering.	OCR Scan	MOUNT-105Â MVK50VC1R0MD55 MVK50VC47RM8X10 MVK35VC221M10X10 MVK35VC22RMF55	PDF
MVK35VC Abstract: MVK50VC1R0MD55TP MVK35VC4R7MD55 F-103 Z capacitor Text: SURFACE MOUNT-105°C MVK Series Surface Mount Low Profile Vertical Chip Solvent Proof +105°C Maximum Temperature The MVK series capacitors are the standard vertical chip capacitors designed for reflow soldering. The maximum height for most of these capacitors is 5.5mm, making them ideal for use in low	OCR Scan	MOUNT-105 MVK50VC1R0MD55 -----------------MVK35VC22RMF55 MVK50VC47RM8X10 MVK35VC221M10X10 MVK50VC1R0MD55 MVK35VC22RMF55 MVK35VC221M10X10 MVK35VC MVK50VC1R0MD55TP MVK35VC4R7MD55 F-103 Z capacitor	PDF

MVK50VC47RM8X10 Search Results

MVK50VC47RM8X10 Price and Stock

United Chemi-Con Inc MVK50VC47RM8X10TP

MVK50VC47RM8X10 Datasheets Context Search

Untitled

th 2190

tantulum capacitor

NIPPON CAPACITORS

j1303

capacitor 1825

k 2645 MOSFET

K 2645 schematic

j6808

MVK35VC

465B

K 2645 schematic circuit

J4-24

MVK35VC

A114

Nippon capacitors

Nippon capacitors

Nippon capacitors

NIPPON CAPACITORS

th 2190

865 RF transistor

J698

Untitled

MVK35VC