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    N CHANNEL IGBT 1200V 30A Search Results

    N CHANNEL IGBT 1200V 30A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL IGBT 1200V 30A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HGTG30N120D2

    Abstract: AN7254 AN7260 HGTG20N100D2 G30N120D2
    Text: HGTG30N120D2 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL • Low Conduction Loss


    Original     		PDF HGTG30N120D2 O-247 580ns HGTG30N120D2 150oC. AN7254 AN7260 HGTG20N100D2 G30N120D2

    schematic diagram "induction heating"

    Abstract: schematic diagram induction heating induction heating schematic schematic induction heating GW30NC120HD ic MARKING QG induction heating control circuit diagram schematic diagram for induction welding JESD97 STGW30NC120HD
    Text: STGW30NC120HD N-CHANNEL 30A - 1200V - TO-247 VERY FAST PowerMESH IGBT TARGET SPECIFICATION General features Type VCES STGW30NC120HD 1200V VCE sat (Max) @ 25°C < 2.8V • LOW ON-LOSSES ■ LOW ON-VOLTAGE DROP (Vcesat) ■ HIGH CURRENT CAPABILITY ■ HIGH INPUT IMPEDANCE (VOLTAGE


    Original     		PDF STGW30NC120HD O-247 schematic diagram "induction heating" schematic diagram induction heating induction heating schematic schematic induction heating GW30NC120HD ic MARKING QG induction heating control circuit diagram schematic diagram for induction welding JESD97 STGW30NC120HD

    HGTG30N120D2

    Abstract: AN7254 AN7260 HGTG20N100D2 717 MOSFET
    Text: HGTG30N120D2 S E M I C O N D U C T O R 30A, 1200V N-Channel IGBT April 1995 Features Package • 30A, 1200V JEDEC STYLE TO-247 • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time - 580ns GATE • High Input Impedance COLLECTOR BOTTOM SIDE METAL


    Original     		PDF HGTG30N120D2 O-247 580ns HGTG30N120D2 150oC. AN7254 AN7260 HGTG20N100D2 717 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD O-247

    GW30NC120HD

    Abstract: STGW30NC120HD schematic diagram induction heating JESD97 W313 9915 H
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD O-247 GW30NC120HD schematic diagram induction heating JESD97 W313 9915 H

    Untitled

    Abstract: No abstract text available
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD O-247

    Untitled

    Abstract: No abstract text available
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD O-247

    Untitled

    Abstract: No abstract text available
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD

    STGW30NC120HD

    Abstract: GW30NC120HD JESD97
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD GW30NC120HD JESD97

    STGW30NC120HD

    Abstract: GW30NC120HD JESD97 STGW30NC120HD ST
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD GW30NC120HD JESD97 STGW30NC120HD ST

    STGW30NC120HD ST

    Abstract: No abstract text available
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD O-247 STGW30NC120HD ST

    1200v 30A to247

    Abstract: No abstract text available
    Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)


    Original     		PDF STGW30NC120HD O-247 STGW30NC120HD O-247 1200v 30A to247

    G5N120CN

    Abstract: TB334 HGT1S5N120CNS HGT1S5N120CNS9A HGTP5N120CN LD26 RHRD4120 G5N120
    Text: HGTP5N120CN, HGT1S5N120CNS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTP5N120CN, HGT1S5N120CNS HGTP5N120CN HGT1S5N120CNS G5N120CN TB334 HGT1S5N120CNS9A LD26 RHRD4120 G5N120

    Untitled

    Abstract: No abstract text available
    Text: HGTG30N120CN / HGTG5A30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN and HGT5A30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTG30N120CN HGTG5A30N120CN HGT5A30N120CN TA49281.

    Untitled

    Abstract: No abstract text available
    Text: HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTG27N120BN HGT5A27N120BN HGT5A27N120BN

    HGT1S5N120CNS

    Abstract: HGT1S5N120CNS9A HGTP5N120CN LD26 RHRD4120 TB334
    Text: HGTP5N120CN, HGT1S5N120CNS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTP5N120CN, HGT1S5N120CNS HGTP5N120CN HGT1S5N120CNS HGT1S5N120CNS9A LD26 RHRD4120 TB334

    MOSFET G27N120BN

    Abstract: 27N120 g27n120 HGTG27N120BN RHRP30120 TA49280 G27N120BN HGT5A27N120BN LD26 27N120BN
    Text: HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN and HGT5A27N120BN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTG27N120BN HGT5A27N120BN HGT5A27N120BN MOSFET G27N120BN 27N120 g27n120 RHRP30120 TA49280 G27N120BN LD26 27N120BN

    G5N120

    Abstract: HGT1S5N120CNS HGT1S5N120CNS9A HGTP5N120CN LD26 RHRD4120 TB334
    Text: HGTP5N120CN, HGT1S5N120CNS Data Sheet December 2001 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar


    Original     		PDF HGTP5N120CN, HGT1S5N120CNS HGTP5N120CN HGT1S5N120CNS G5N120 HGT1S5N120CNS9A LD26 RHRD4120 TB334

    HGTG5N120BND

    Abstract: 5n120bnd 5n120 TA49058 mosfet 600v 10a to-220ab IC-2521 HGTP5N120BND RHRD6120 TA49308 TB334
    Text: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    Original     		PDF HGTG5N120BND, HGTP5N120BND HGTG5N120BND HGTP5N120BND TA49308. TA49058 RHRD6120) 5n120bnd 5n120 TA49058 mosfet 600v 10a to-220ab IC-2521 RHRD6120 TA49308 TB334

    5N120CND

    Abstract: 5n120 12V 200A Relay HGT1S5N120CNDS HGT1S5N120CNDS9A HGTG5N120CND HGTP5N120CND TA49058 TB334 transistors equivalent
    Text: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Data Sheet January 2000 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high


    Original     		PDF HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS HGTP5N120CND HGT1S5N120CNDS TA49309. TA49058. 5N120CND 5n120 12V 200A Relay HGT1S5N120CNDS9A HGTG5N120CND TA49058 TB334 transistors equivalent

    mosfet 5N120bnd

    Abstract: No abstract text available
    Text: HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are NonPunch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT


    Original     		PDF HGTG5N120BND, HGTP5N120BND HGTG5N120BND HGTP5N120BND TA49308. TA49058 RHRD6120) mosfet 5N120bnd

    G5N120

    Abstract: No abstract text available
    Text: HGTP5N120CN, HGT1S5N120CNS Semiconductor Data Sheet March 1999 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs


    OCR Scan     		PDF HGTP5N120CN, HGT1S5N120CNS HGTP5N120CN HGT1S5N120CNS TA49309. O-263AB O-263AB G5N120

    G5N120CN

    Abstract: G5N120 transistor HJ 388
    Text: HGTP5N120CN, HGT1S5N120CNS Semiconductor Data S heet M arch 1999 25A, 1200V, NPT Series N-Channel IGBT Features The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs


    OCR Scan     		PDF HGTP5N120CN, HGT1S5N120CNS HGTP5N120CN TA49309. O-263AB T1S5N120CNS G5N120CN G5N120 transistor HJ 388

    Untitled

    Abstract: No abstract text available
    Text: HGTG27N120BN Semiconductor A p ril 1999 D ata S h eet 72A, 1200V, NPT Series N-Channel IGBT Features The HGTG27N120BN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    OCR Scan     		PDF HGTG27N120BN HGTG27N120BN 140ns 1-800-4-HARRIS