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    N MOSFET PSPICE PARAMETERS Search Results

    N MOSFET PSPICE PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    N MOSFET PSPICE PARAMETERS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFF70N06 RFG70N06
    Text: RFF70N06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V JEDEC TO-254AA • rDS ON = 0.025Ω GATE SOURCE • Temperature Compensating PSPICE Model


    Original     		RFF70N06 O-254AA 150oC RFF70N06 AN7254 AN7260 AN9321 AN9322 RFG70N06 PDF

    kp-98

    Abstract: Pspice AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K49211 RF1K4921196 TB334
    Text: RF1K49211 Data Sheet August 1999 7A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET • 7A, 12V • rDS ON = 0.020Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature


    Original     		RF1K49211 RF1K49211 kp-98 Pspice AN7254 AN7260 AN9321 AN9322 MS-012AA RF1K4921196 TB334 PDF

    RFF60P06

    Abstract: RFG60P06E rfg60p06
    Text: RFF60P06 S E M I C O N D U C T O R 25A†, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET December 1995 Features Package • 25A†, 60V TO-254AA • rDS ON = 0.030Ω GATE SOURCE DRAIN • Temperature Compensating PSPICE Model


    Original     		RFF60P06 O-254AA 150oC RFF60P06 MIL-STD-750, 150oC, MIL-S-19500, 100ms; 500ms; RFG60P06E rfg60p06 PDF

    transistors 1UW

    Abstract: transistors 1UW 18 p06e
    Text: RFF60P06 21 H A R R 'S 25A+, 60V, Hermetically Packaged, Avalanche Rated P-Channel Enhancement-Mode Power MOSFET Decem ber 1995 Features Package • 2 5 A t, 60V • TO-254AA r D S O N = 0 - 0 3 0 i 2 G A TE • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve


    OCR Scan     		RFF60P06 O-254AA MIL-STD-750, MIL-S-19500, 100ms; 500ms; transistors 1UW transistors 1UW 18 p06e PDF

    9249 16

    Abstract: AN609 Si3853DV BY 360-92
    Text: Si3853DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si3853DV AN609 07-May-07 9249 16 BY 360-92 PDF

    74602

    Abstract: power MOSFET spice model 3642 AN609 Si4831DY 142321
    Text: Si4831DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4831DY AN609 10-May-07 74602 power MOSFET spice model 3642 142321 PDF

    4614 mosfet

    Abstract: mosfet 1412 1.4037 MOSFET 4614 AN609 76550 31878
    Text: Si3879DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si3879DV AN609 03-May-07 4614 mosfet mosfet 1412 1.4037 MOSFET 4614 76550 31878 PDF

    n mosfet pspice parameters

    Abstract: MOSFET with Schottky Diode AN609 Si4808DY 276552
    Text: Si4808DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4808DY AN609 14-Jun-07 n mosfet pspice parameters MOSFET with Schottky Diode 276552 PDF

    74829

    Abstract: data sheet 4521 AN609 Si6923DQ
    Text: Si6923DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6923DQ AN609 10-Jul-07 74829 data sheet 4521 PDF

    1.4035

    Abstract: 4422 MOSFET AN609 131181 power MOSFET spice model
    Text: Si4621DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4621DY AN609 02-Oct-07 1.4035 4422 MOSFET 131181 power MOSFET spice model PDF

    AN609

    Abstract: Si5853CDC power MOSFET spice model
    Text: Si5853CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si5853CDC AN609 22-Oct-07 power MOSFET spice model PDF

    74299

    Abstract: n mosfet pspice parameters AN609 filter circuit using mosfet 45843
    Text: Si5858DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si5858DU AN609 27-Jun-07 74299 n mosfet pspice parameters filter circuit using mosfet 45843 PDF

    74274

    Abstract: 9327 AN609
    Text: Si5857DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si5857DU AN609 27-Jun-07 74274 9327 PDF

    8662

    Abstract: transistor 5457 AN609 Si7703EDN 460405
    Text: Si7703EDN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si7703EDN AN609 22-Dec-05 8662 transistor 5457 460405 PDF

    74607

    Abstract: AN609 power MOSFET spice model n mosfet pspice parameters
    Text: Si4620DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4620DY AN609 09-May-07 74607 power MOSFET spice model n mosfet pspice parameters PDF

    8276 m

    Abstract: AN609 power MOSFET spice model
    Text: SiA810DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SiA810DJ AN609 03-May-07 8276 m power MOSFET spice model PDF

    7834

    Abstract: vishay MOSFET AN609 SiA811DJ 149494
    Text: SiA811DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SiA811DJ AN609 10-Aug-07 7834 vishay MOSFET 149494 PDF

    74669

    Abstract: c 6092 4336 AN609 Si3851DV POWER MOSFET APPLICATION NOTE
    Text: Si3851DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si3851DV AN609 03-May-07 74669 c 6092 4336 POWER MOSFET APPLICATION NOTE PDF

    74626

    Abstract: 31.3573 9936 mosfet Si4837DY AN609
    Text: Si4837DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4837DY AN609 14-May-07 74626 31.3573 9936 mosfet PDF

    4606 mosfet

    Abstract: A 4606 4606 4980 7935 945 mosfet n diode 7935 9934 AN609 filter circuit using mosfet
    Text: SiA813DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		SiA813DJ AN609 18-Jan-08 4606 mosfet A 4606 4606 4980 7935 945 mosfet n diode 7935 9934 filter circuit using mosfet PDF

    74629

    Abstract: 3994 AN609 Si4852DY 34268 102046
    Text: Si4852DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4852DY AN609 14-May-07 74629 3994 34268 102046 PDF

    309-981

    Abstract: AN609 Si3812DV
    Text: Si3812DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si3812DV AN609 03-May-07 309-981 PDF

    1.4419

    Abstract: 74268 0745 AN609 Si5486DU 150074
    Text: Si5486DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si5486DU AN609 20-Jun-07 1.4419 74268 0745 150074 PDF

    AN609

    Abstract: Si4630DY
    Text: Si4630DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4630DY AN609 09-May-07 PDF