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    N-150 100V Search Results

    N-150 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UHD532/883 Rochester Electronics LLC UHD532 - POWER DRIVER, NOR, QUAD 2-INPUT, 100V - Dual marked (5962-8960403CA) Visit Rochester Electronics LLC Buy
    ISL6719ARZ-T Renesas Electronics Corporation 100V Linear Bias Supply Visit Renesas Electronics Corporation
    ISL6719ARZ Renesas Electronics Corporation 100V Linear Bias Supply Visit Renesas Electronics Corporation
    ISL6720AARZ-T Renesas Electronics Corporation 100V Triple Linear Bias Supply Visit Renesas Electronics Corporation
    ISL6720AARZ Renesas Electronics Corporation 100V Triple Linear Bias Supply, DFN, /Tube Visit Renesas Electronics Corporation

    N-150 100V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    90N15

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 90N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 90 A Ω = 16 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150


    Original     		PDF 90N15 728B1 90N15

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150


    Original     		PDF 128N15 O-264 728B1 123B1 728B1 065B1

    180N15

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150


    Original     		PDF 180N15 728B1 123B1 728B1 065B1 180N15

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150


    Original     		PDF 128N15 O-264 728B1 123B1 065B1

    75n15

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS


    Original     		PDF 75N15 75N15 O-247 O-268 O-268 728B1

    Untitled

    Abstract: No abstract text available
    Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS Continuous


    Original     		PDF 180N15 O-264 728B1

    180N15

    Abstract: 123B16
    Text: IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 9 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 150 V VGS


    Original     		PDF 180N15 728B1 123B1 728B1 065B1 180N15 123B16

    Untitled

    Abstract: No abstract text available
    Text: IXTK 128N15 High Current Mega MOSTMFET VDSS ID25 = 150 V = 128 A Ω = 15 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS


    Original     		PDF 128N15 O-264 728B1 123B1 728B1 065B1

    IXTH48N15

    Abstract: 48n15
    Text: Advance Technical Information IXTH 48N15 IXTT 48N15 High Current Power MOSFET VDSS ID25 = 150 V = 48 A Ω = 32 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS


    Original     		PDF 48N15 48N15 O-247 O-268 O-268 728B1 IXTH48N15

    IXTH75N15

    Abstract: 75N15
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20


    Original     		PDF 75N15 O-247 405B2 IXTH75N15 75N15

    75N15

    Abstract: .75N15
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous


    Original     		PDF 75N15 O-247 728B1 75N15 .75N15

    Untitled

    Abstract: No abstract text available
    Text: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20


    Original     		PDF 75N15 O-247 405B2

    diode SM 88A

    Abstract: transistor N 343 AD
    Text: IXTH 88N15 IXTT 88N15 High Current Power MOSFET V DSS I D25 = = = RDS on 150 V 88 A Ω 22 mΩ N-Channel Enhancement Mode Symbol Test Conditions V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient


    Original     		PDF 88N15 O-247 728B1 123B1 728B1 065B1 diode SM 88A transistor N 343 AD

    352AI

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH 88N15 IXTT 88N15 High Current Power MOSFET V DSS I D25 = = = RDS on 150 V 88 A Ω 22 mΩ N-Channel Enhancement Mode Symbol Test Conditions V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V


    Original     		PDF 88N15 O-247 O-268 728B1 123B1 728B1 065B1 352AI

    180N15

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 180N15 High Current MegaMOSTMFET VDSS ID25 = 150 V = 180 A Ω = 10 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 150 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		PDF 180N15 728B1 180N15

    IXTH16N10D2

    Abstract: IXTT16N10D2 16N10
    Text: Advance Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 100 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH16N10D2 IXTT16N10D2 O-247 O-247) O-268 100ms 16N10D2 IXTH16N10D2 IXTT16N10D2 16N10

    IXFN180N10

    Abstract: No abstract text available
    Text: IXFN180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 100V 180A  8m 250ns miniBLOC E153432 S Symbol Test Conditions VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXFN180N10 250ns E153432 100ms 180N10 IXFN180N10

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL31B154KCHNNNF  Product : Multi-layer Ceramic Capacitor  Description : CAP, 150㎋, 100V, ±10%, X7R, 1206 A. Samsung Part Number ① Series ② Size CL 31 B 154 K C H N N N F


    Original     		PDF CL31B154KCHNNNF 10sec.

    IRF522

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRF522 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642

    IRFF121

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRFF121 IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642

    IRF540

    Abstract: irf140 IRF142 irf540 27 MHz 75 LS 541 IRF141 IRF542 VN0600D IRF630 IRF631
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 IRF540 irf140 IRF142 irf540 27 MHz 75 LS 541 IRF141 IRF542 VN0600D IRF630 IRF631

    VN89AF

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


    OCR Scan     		PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 VN89AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642

    Untitled

    Abstract: No abstract text available
    Text: VMO 550-01F VDSS Id25 HiPerFET MOSFET Module ^ D S o n = 100V “ 590 A “ 2 .1 m O N-Channel Enhancement Mode Preliminary Data (pS Maximum Ratings Symbol Test Conditions vv DSS Td = 25°C to 150°C 100 V v DGR Td = 25°C to 150°C; RGS = 10 kß 100


    OCR Scan     		PDF 550-01F

    IRF 260 N

    Abstract: irf 640 IRF640 F640 TT220 IRF641 irf 80 n
    Text: 640 /FI 641/FI SGS-THOMSON ELiOT@KS IRF IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE R D S on Id IRF640 IRF640FI 200 V 200 V 0.18 n 0.18 n 18 A 10 A IRF641 IRF641FI 150 V 150 V 0.18 a 0.18 n 18 A 10 A . • . ■ V dss AVALANCHE RUGGEDNESS TECHNOLOGY


    OCR Scan     		PDF 641/FI IRF640 IRF640FI IRF641 IRF641FI O-220 ATT220 640/FI 640/FI-64 IRF 260 N irf 640 F640 TT220 irf 80 n