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    N-CHANNEL ENHANCEMENT 70A Search Results

    N-CHANNEL ENHANCEMENT 70A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL ENHANCEMENT 70A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDB7051

    Abstract: NDP7051
    Text: N August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDP7051 NDB7051 NDB7051

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L NDP7051 Polycarbonate
    Text: August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDP7051 NDB7051 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L Polycarbonate

    FQH70N15

    Abstract: No abstract text available
    Text: TM FQH70N15 N-Channel Power MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQH70N15 FQH70N15

    FQH70N10

    Abstract: No abstract text available
    Text: FQH70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQH70N10 FQH70N10

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary URFP064 Power MOSFET 70A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC URFP064 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching


    Original     		PDF URFP064 URFP064 O-247 URFP064L-T47-T URFP064G-T47-T QW-R502-752

    FDA70N20

    Abstract: No abstract text available
    Text: TM FDA70N20 200V N-Channel MOSFET Features Description • 70A, 200V, RDS on = 0.035Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 66 nC)


    Original     		PDF FDA70N20 FDA70N20

    N-Channel MOSFET 200v

    Abstract: FDA70N20
    Text: TM FDA70N20 200V N-Channel MOSFET Features Description • 70A, 200V, RDS on = 0.035Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 66 nC)


    Original     		PDF FDA70N20 FDA70N20 N-Channel MOSFET 200v

    FQA70N08

    Abstract: No abstract text available
    Text: FQA70N08 August 2000 QFET TM FQA70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA70N08 FQA70N08

    Untitled

    Abstract: No abstract text available
    Text: FQA70N10 August 2000 QFET FQA70N10 TM 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA70N10

    Untitled

    Abstract: No abstract text available
    Text: FQAF70N10 August 2000 QFET TM FQAF70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF70N10

    FQPF70N08

    Abstract: DIODE 436
    Text: FQPF70N08 August 2000 QFET TM FQPF70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF70N08 FQPF70N08 DIODE 436

    Untitled

    Abstract: No abstract text available
    Text: FQA70N15 N-Channel QFET MOSFET 150 V, 70 A, 28 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially


    Original     		PDF FQA70N15

    Untitled

    Abstract: No abstract text available
    Text: FQA70N15 N-Channel QFET MOSFET 150 V, 70 A, 28 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially


    Original     		PDF FQA70N15

    Untitled

    Abstract: No abstract text available
    Text: FQPF70N10 August 2000 QFET FQPF70N10 TM 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF70N10

    FQA70N10

    Abstract: No abstract text available
    Text: FQA70N10 August 2000 QFET TM FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA70N10 FQA70N10

    FQAF70N10

    Abstract: No abstract text available
    Text: FQAF70N10 August 2000 QFET TM FQAF70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF70N10 FQAF70N10

    FQAF70N08

    Abstract: No abstract text available
    Text: FQAF70N08 August 2000 QFET TM FQAF70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF70N08 FQAF70N08

    70n06

    Abstract: P 70N06 70n06 data Mosfet 70n06
    Text: UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET 70 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal


    Original     		PDF 70N06 70N06 O-220 70N06L O-220 QW-R502-089 P 70N06 70n06 data Mosfet 70n06

    Untitled

    Abstract: No abstract text available
    Text: FQA70N10 August 2000 QFET TM FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA70N10

    FQA70N10

    Abstract: No abstract text available
    Text: FQA70N10 August 2000 QFET TM FQA70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA70N10 FQA70N10

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    rfp14n05

    Abstract: N-Channel Enhancement-Mode 25AF
    Text: — POWER MOSFETs 3 N-CHANNEL POWER MOSFETs PAGE N-CHANNEL POWER MOSFET DATA SHEETS 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power M OSFETs. 3-3 RFD14N06, RFD14N06SM, RFP14N06 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power M OSFETs.


    OCR Scan     		PDF RFD14N05, RFD14N05SM, RFP14N05 RFD14N06, RFD14N06SM, RFP14N06 RFD16N05, RFD16N05SM RFD16N06, RFD16N06SM N-Channel Enhancement-Mode 25AF

    Untitled

    Abstract: No abstract text available
    Text: August 1 99 6 N NDP7051 / NDB7051 N-Channel Enhancement M ode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP7051 NDB7051

    Untitled

    Abstract: No abstract text available
    Text: August 1996 N NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP7051 NDB7051