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    N-CHANNEL INSULATED GATE TYPE Search Results

    N-CHANNEL INSULATED GATE TYPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H480FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ IN input type Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL INSULATED GATE TYPE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD ISL9V3040D3S Insulated Gate Bipolar Transistor 300mJ, 400V, N-CHANNEL IGNITION IGBT  DESCRIPTION The UTC ISL9V3040D3S is an N-channel ignition Insulated Gate Bipolar Transistor. It uses UTC’s advanced technology to provide customers with outstanding SCIS capability.


    Original     		PDF ISL9V3040D3S 300mJ, ISL9V3040D3S ISL9V3040D3SL-TA3-T ISL9V3040D3SG-TA3-T ISL9V3040D3SL-TF3-T ISL9V3040D3SG-TF3-T ISL9V3040D3SL-TN3-R ISL9V3040D3SG-TN3-R

    95160

    Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
    Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with


    Original     		PDF TMF3201J OT363 TMF3201J OT363 95160 MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs Dual-Gate Mosfet 9935 mosfet 95160 3

    Untitled

    Abstract: No abstract text available
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description SOT-363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared


    Original     		PDF TMF3201J OT-363 TMF3201J OT-363

    AN450

    Abstract: AN4502 AN4503 AN4505 GP800FSS12
    Text: GP800FSS12 GP800FSS12 Powerline N-Channel Single Switch IGBT Module Preliminary Information Replaces October 1999 version, DS5239-2.0 DS5239-3.0 January 2000 The GP800FSS12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar


    Original     		PDF GP800FSS12 DS5239-2 DS5239-3 GP800FSS12 AN450 AN4502 AN4503 AN4505

    GT8G121

    Abstract: No abstract text available
    Text: GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 Unit: mm STROBE FLASH APPLICATIONS ! 4th Generation Trench Gate Structure ! Enhancement−Mode ! Low Saturation Voltage : VCE (sat) = 7 V (Max.) (@IC = 150 A) ! 4 V Gate Drive


    Original     		PDF GT8G121 GT8G121

    GT8G121

    Abstract: No abstract text available
    Text: GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT8G121 STROBE FLASH APPLICATIONS Unit: mm 4th Generation Trench Gate Structure Enhancement−Mode Low Saturation Voltage : VCE (sat) = 7 V (Max.) (@IC = 150 A) 4 V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT8G121 GT8G121

    Untitled

    Abstract: No abstract text available
    Text: GP1600FSS12-ABC GP1600FSS12-ABC Powerline N-Channel IGBT Module Advance Information DS5173-1.2 May 1999 The GP1200FSS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power


    Original     		PDF GP1600FSS12-ABC DS5173-1 GP1200FSS12-ABC

    Untitled

    Abstract: No abstract text available
    Text: GP1600FSS18-AAB GP1600FSS18-AAB Powerline N-Channel IGBT Module Advance Information DS5176-1.1 May 1999 The GP1600FSS18-AAB is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power


    Original     		PDF GP1600FSS18-AAB DS5176-1 GP1600FSS18-AAB

    gt8g103

    Abstract: No abstract text available
    Text: GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT8G103 Unit: mm STROBE FLASH APPLICATIONS 3rd Generation Enhancement−Mode Low Saturation Voltage: VCE sat = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT8G103 gt8g103

    GT5G102

    Abstract: 130a
    Text: GT5G102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel MOS Type Preliminary GT5G102 Strobe Flash Applications • 3rd Generation • High input impedance • Low saturation voltage Collector Gate : VCE sat = 8 V (max) (IC = 130 A) • Enhancement-mode


    Original     		PDF GT5G102 GT5G102 130a

    MARKING CODE Zi sot363

    Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source


    Original     		PDF TMF3201J TMF3201J OT-363 OT-363 KSD-A5S001-000 MARKING CODE Zi sot363 ZI Marking Code transistor MOSFET 9935

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP2400ESM12 S2400A MAX4800A
    Text: GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		PDF GP2400ESM12 DS5360-1 GP2400ESM12 AN4502 AN4503 AN4505 AN4506 S2400A MAX4800A

    bipolar transistor td tr ts tf

    Abstract: No abstract text available
    Text: GP800DDS18-AAB GP800DDS18-AAB Powerline N-Channel IGBT Module Advance Information DS5165-1.0 May 1999 The GP800DDS18-AAB is a dual switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the


    Original     		PDF GP800DDS18-AAB DS5165-1 GP800DDS18-AAB bipolar transistor td tr ts tf

    DS4751

    Abstract: ITS60C06
    Text: ITS60C06 ITS60C06 Medium Frequency Powerline N-Channel IGBT With Ultrafast Diode DS4751 - 2.0 May 1999 The ITS60C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    Original     		PDF ITS60C06 DS4751 ITS60C06

    10N50A

    Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D
    Text: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode


    OCR Scan     		PDF IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD IGTH10N50AD 2CS-42 10N50A 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D

    BSD20

    Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
    Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.


    OCR Scan     		PDF bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion

    transistor BD 339

    Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
    Text: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.


    OCR Scan     		PDF 00E374S BSD212 BSD215 BSD213 BSD215 BSD214 bb53031 transistor BD 339 transistor BD 341 BB530 -20/transistor BD 341

    Untitled

    Abstract: No abstract text available
    Text: BSS83 _ _ Jv _ MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.


    OCR Scan     		PDF BSS83 OT143

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z90791

    BSD12

    Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
    Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor

    DS4752

    Abstract: No abstract text available
    Text: ITS08C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Novem ber 1997 version, DS4752 - 2.1 The ITS08C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF ITS08C12 DS4752 ITS08C12

    ITS25C12

    Abstract: No abstract text available
    Text: ITS25C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4741 - 2.1 The ITS25C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF ITS25C12 DS4741 ITS25C12

    T0-264

    Abstract: ITS35C12T
    Text: ITS35C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4754 - 2.1 The ITS35C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r


    OCR Scan     		PDF ITS35C12 DS4754 ITS35C12 T0-264 ITS35C12T

    Untitled

    Abstract: No abstract text available
    Text: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.


    OCR Scan     		PDF 711002b BSS83 OT143