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    N-P-N POWER TRANSISTOR Search Results

    N-P-N POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N-P-N POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6282

    Abstract: No abstract text available
    Text: 2N6282 20 A Complementary N-P-N And P-N-P Monolithic Darlington Power Transisto. Page 1 of 2 Enter Your Part # Home Part Number: 2N6282 Online Store 2N6282 Diodes 20 Transistors A Complementary N-P-N And P-N-P Monolithic Integrated Circuits Darlington Power Transistor. High Voltage Rating 60 V


    Original     		PDF 2N6282 2N6282 com/2n6282

    transistor 1251 n-p-n

    Abstract: 2N6284
    Text: 2N6284 20 A Complementary N-P-N And P-N-P Monolithic Darlington Power Transisto. Page 1 of 2 Enter Your Part # Home Part Number: 2N6284 Online Store 2N6284 Diodes 20 Transistors A Complementary N-P-N And P-N-P Monolithic Integrated Circuits Darlington Power Transistor. High Voltage Rating 100 V


    Original     		PDF 2N6284 2N6284 com/2n6284 transistor 1251 n-p-n

    2n6287

    Abstract: No abstract text available
    Text: 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. . Page 1 of 1 Enter Your Part # Home Part Number: 2N6287 Online Store 2N6287 Diodes 20 Transistors A complementary N -P-N and P-N -P monolithic Integrated Circuits darlington power transistor. High voltage rating 100 V


    Original     		PDF 2N6287 2N6287 com/2n6287

    Untitled

    Abstract: No abstract text available
    Text: 2N5301 High Current - High Power - High Speed N-P-N Power Transisto. 1 of 1 Home Part Number: 2N5301 Online Store 2N5301 Diodes High Transistors C urrent - High Po w e r - High Spee d N- P- N P o w er


    Original     		PDF 2N5301 com/2n5301 2N5301

    Untitled

    Abstract: No abstract text available
    Text: LTC2205-14 14-Bit, 65Msps ADC DESCRIPTION FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps 78.3dB SNR and 98dB SFDR 2.25VP-P Range SFDR >90dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H


    Original     		PDF LTC2205-14 14-Bit, 65Msps 65Msps 25VP-P 140MHz 700MHz 600mW 105Msps:

    2N6079

    Abstract: No abstract text available
    Text: 2N6079 High-voltage high-power silicon N-P-N transistor. 8.14 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6079 Online Store 2N6079 Diodes High-voltage high-power silicon N-P-N transistor. Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6079 2N6079 com/2n6079

    Untitled

    Abstract: No abstract text available
    Text: LTC2205/LTC2204 16-Bit, 65Msps/40Msps ADCs DESCRIPTION FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps/40Msps 79dB SNR and 100dB SFDR 2.25VP-P Range SFDR >92dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H


    Original     		PDF LTC2205/LTC2204 16-Bit, 65Msps/40Msps 100dB 25VP-P 140MHz 700MHz 610mW/480mW

    G86 770 A2

    Abstract: LTC2205IUK LTC2204 LTC2205-14 LTC2206 LTC2206-14 LTC2207 LTC2207-14 marking code g81
    Text: LTC2205/LTC2204 16-Bit, 65Msps/40Msps ADCs DESCRIPTION FEATURES n n n n n n n n n n n n n Sample Rate: 65Msps/40Msps 79dB SNR and 100dB SFDR 2.25VP-P Range SFDR >92dB at 140MHz (1.5VP-P Input Range) PGA Front End (2.25VP-P or 1.5VP-P Input Range) 700MHz Full Power Bandwidth S/H


    Original     		PDF LTC2205/LTC2204 16-Bit, 65Msps/40Msps 100dB 25VP-P 140MHz 700MHz 610mW/480mW G86 770 A2 LTC2205IUK LTC2204 LTC2205-14 LTC2206 LTC2206-14 LTC2207 LTC2207-14 marking code g81

    BD131

    Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
    Text: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.


    OCR Scan     		PDF BD131 711005b Q0427faD OT-32 BD132. O-126 OT-32) D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132

    TA8210

    Abstract: TA8232 TA8232 h TA8723 2N6108 RCA ta7741 TA7743 TA7742 ta7782 2N6475
    Text: Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS 7=3 3 - £ General-Purpose Medium-Power Types for Switching and Amplifier Applications Features: • Low saturation voltages • Complementary n-p-n and p-n-p types • Maximum safe-area-of-operation curves specified


    OCR Scan     		PDF 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 2N6473, 2N6474* 2N6475, 2N6476" 100s2) TA8210 TA8232 TA8232 h TA8723 2N6108 RCA ta7741 TA7743 TA7742 ta7782 2N6475

    transistor TIP3055

    Abstract: No abstract text available
    Text: TIP3055 _ y v . SILICON POWER TRANSISTOR N-P-N epitaxial-base power transistor in a plastic SOT-93 envelope for use in audio output stages and general amplifier and switching applications. P-N-P complement is TIP2955.


    OCR Scan     		PDF TIP3055 OT-93 TIP2955. 003302b bbS3T31 00350Efl transistor TIP3055

    Untitled

    Abstract: No abstract text available
    Text: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60, 60A, 60B and 60C.


    OCR Scan     		PDF BDT61 BDT61B BDT60, BDT61 bbS3T31 0034bfll 7Z82097 QQ34bfl2

    bd132

    Abstract: transistor ALG 20
    Text: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF BD132 OT-32 BD131. bbS3T31 0D34251 BD131 BD132 bb53T31 transistor ALG 20

    GE10023

    Abstract: No abstract text available
    Text: GE10015,16,20,21,22,23 File Number Silicon N-P-N Darlington Power T ransistors 2374 TERM IN A L D ESIG N A TIO N S c FLANGE The GE10015, GE10016and GE10020thru GE10023 series of silicon n-p-n power Darlington transistors are designed for use in power switching applications requiring highvoltage capability and fast switching speeds. They are


    OCR Scan     		PDF GE10015 GE10015, GE10016and GE10020thru GE10023 T0-204AE O-204AE GE10020 GE10021

    2N5320

    Abstract: 2N5320 HARRIS 2N5322 2N5320 2N5323 Lem LT 300 - t
    Text: Power Transistors File Number 325 HA RR IS S E M I C O N D 2N5320, 2N5321, 2N5322, 2N5323 S E CT OR S7E D • 43Ü2S71 OOnflbS T Complementary N-P-N & P-N-P Silicon Power Transistors - 3 3 - Ö 7 , General-Purpose Types for Small-Signal, Medium-Power Applications


    OCR Scan     		PDF 2N5320, 2N5321, 2N5322, 2N5323 2NS322 2NS320 2N5323 2N5321 KS-IM07RI 2NS320, 2N5320 2N5320 HARRIS 2N5322 2N5320 Lem LT 300 - t

    Solidev

    Abstract: Solidev Semiconductors npn-pnp symbol SDT3622 SDT8603 SDT860 Scans-00124309
    Text: Sem iconductors Solidev Silicon Power Transistors Silico n N P N / P N P Power Transistors— 90 A m p P H Y S IC A L D IM E N S IO N S REFERENCE T A B LE Code Polarity S t o c k No. SDT8603 SDT3622 NPN PNP 35079R 35080A A B S O L U T E M A X IM U M R A T IN G S


    OCR Scan     		PDF SDT8603 SDT3622 35079R 5080A SDT3G22 Solidev Solidev Semiconductors npn-pnp symbol SDT860 Scans-00124309

    BDT60

    Abstract: kia 494 BDT60B BDT61 BDT61A BDT61B BDT61C transistor 2TH transistor d 1991 ar
    Text: BDT60;60A BDT60B;60C J ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA


    OCR Scan     		PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. O-220. 0D34bb7 kia 494 BDT61 BDT61A BDT61C transistor 2TH transistor d 1991 ar

    2Sb560

    Abstract: 2SD438 2sd438 2sb560 2sb560 transistor
    Text: 2SB560 E p ita x ia l P la n a i S ilic o n T ra n sisto rs P N P /n p n 2006A 2SD438 326G Low Frequency Power Amp Applications The 2SB560/2SD438 are epitaxial planar transistors for complementary push-pi pair having high reverse voltage and low saturation voltage, and suital


    OCR Scan     		PDF 2SB560 2SD438 2SB560/2SD438 2SB560 2SB560/2SD* SC-51 2SD438. 3267AT/3085MÃ 2SD438 2sd438 2sb560 2sb560 transistor

    RCA-MJ15001

    Abstract: J15002 92CS-3 d1747
    Text: □1 G E SOLI» STATE 3875081 G E SOLID STATE General-Purpose Power Transistors 01E DE I 3fi7S0fll DD17470 fl 17470 _ > MJ15001, MJ15002 File Number 1093 Complementary N-P-N/P-N-P Silicon 'Power Transistors Rugged Devices, B roadly A p p licable For Industrial and


    OCR Scan     		PDF DD17470 MJ15001, MJ15002 RCA-MJ15001 MJ15002 MJ150 92C8-50484 J15002. J15002 92CS-3 d1747

    34A-100

    Abstract: No abstract text available
    Text: TIP34; A; B; C PHILIPS INTERNATIONAL 5bE 3 • 711002b 0043512 410 » P H I N SILICON POWER TRANSISTORS P-N-P epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications. N-P-N complements are


    OCR Scan     		PDF TIP34; 711002b OT-93 TIP33, TIP33A, TIP33B TIP33C. TIP34 34A-100

    DARLINGTON TRANSISTOR ARRAYS 2A

    Abstract: PNP DARLINGTON ARRAYS 60V transistor npn ic2a DARLINGTON ARRAYS PNP PU4319 6 "transistor arrays" ic "Darlington Transistor" PANASONIC
    Text: Power Transistor Arrays PU4319 PU4319 Package D im ensions Silicon NPN/PNP Planar Darlington Type Power A m plifie r, Sw itching • Features • H igh D C c u r re n t gain It f e • High s p e e d sw itch in g • 2 N P N e le m e n ts + 2 P N P e le m e n ts


    OCR Scan     		PDF PU4319 -20mA bci32fl52 0017DSS DARLINGTON TRANSISTOR ARRAYS 2A PNP DARLINGTON ARRAYS 60V transistor npn ic2a DARLINGTON ARRAYS PNP PU4319 6 "transistor arrays" ic "Darlington Transistor" PANASONIC

    MJ10100

    Abstract: AN-875 W. Schultz mj1010 MJ10021
    Text: I AN-875 MOTOROLA r Application Note Semiconductor Products Inc. POWER TRANSISTOR SAFE OPERATING AREA SPECIAL CONSIDERATIONS FOR SWITCHING POWER SUPPLIES P re p a re d by W a rre n S ch u ltz A p p lic a tio n s E n g in eerin g INTRODUCTION The power transistor, in today’s switching power


    OCR Scan     		PDF AN-875 AN875/D MJ10100 AN-875 W. Schultz mj1010 MJ10021

    NEL130681-12

    Abstract: NEL1306 2SC3542 NEL1300 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320
    Text: CLASS A, 1.3 GHz, 12 VOLT POWER TRANSISTOR FEATURES NEL130681-12 NEL13208I-12 DESCRIPTION • HIGH LINEAR POWER AND GAIN: N E L 1306: P idB = 3 8 dBm , G id B = 7.5 dB T Y P N EC 's N E L 1 3 0 0 series of N P N epitaxial microwave power transistor is designed specifically for large volum e mobile and


    OCR Scan     		PDF NEL130681-12 NEL13208I-12 NEL1306: NEL1320: NEL1300 10pFMAX 1000pF 30dBm 38dBm NEL1306 2SC3542 NEL13208I-12 2SC3541 J425 75E5 NEL132081-12 NEL1320

    Untitled

    Abstract: No abstract text available
    Text: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter


    OCR Scan     		PDF BD131 OT-32 BD132. DD34243 BD132 003424b