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    N1003 Search Results

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    N1003 Price and Stock

    WEE D2FN1003M

    SWITCH SNAP ACTION SPDT 1A 125V
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    DigiKey D2FN1003M Bulk 12,325 250
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    Diodes Incorporated DMN1003UCA6-7

    MOSFET 2N-CH X3-DSN3518-6
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    DigiKey DMN1003UCA6-7 Reel 3,000 3,000
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    DMN1003UCA6-7 Digi-Reel 3,000 1
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    DMN1003UCA6-7 Cut Tape 3,000 1
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    Mouser Electronics DMN1003UCA6-7 2,349
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    Vishay Dale NTHS1206N01N1003FE

    THERMISTOR NTC 100K OHM 1% 1206
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    DigiKey NTHS1206N01N1003FE Digi-Reel 2,061 1
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    Vishay Dale NTHS0603N01N1003JE

    THERM NTC 100KOHM 3964K 0603
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    DigiKey NTHS0603N01N1003JE Reel 1,725 2,000
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    NTHS0603N01N1003JE Cut Tape 1,725 1
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    NTHS0603N01N1003JE Digi-Reel 1,725 1
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    Vishay Dale NTHS0805N17N1003JE

    THERM NTC 100KOHM 4064K 0805
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    DigiKey NTHS0805N17N1003JE Cut Tape 1,710 1
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    NTHS0805N17N1003JE Digi-Reel 1,710 1
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    N1003 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    N1003

    Abstract: 810252BKI-02LFT
    Text: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: N1003-01 DATE: April 12, 2010 Product Affected: 810252BKI-02 See Attached Date Effective: Contact: Title: Phone #: Fax #: E-mail:


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    N1003-01 810252BKI-02 810252DKI-02 810252BKI-02LF 810252DKI-02LF 810252BKI-02LFT 810252DKI-02LFT N1003 810252BKI-02LFT PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers. unit:mm 2045B Features [2SA1592/2SC4134] 2.3 5.5 1.5 6.5


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    ENN2510A 2SA1592/2SC4134 2045B 2SA1592/2SC4134] 2SA1592/ 2SC4134-applied 2044B PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2511B 2SA1593/2SC4135 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity


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    EN2511B 2SA1593/2SC4135 2SA1593/2SC4135-applied 2SA1593 PDF

    Ic14nf

    Abstract: 2SA1669 ITR04064 ITR04065 ITR04066 ITR04067 ITR04068
    Text: Ordering number:ENN2972 PNP Epitaxial Planar Silicon Transistors 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions • High cutoff frequnecy : fT=3.0GHz typ. · High power gain : MAG=11dB typ f=0.9GHz · Small noise figure : NF=2.0dB typ (f=0.9GHz)


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    ENN2972 2SA1669 2018B 2SA1669] Ic14nf 2SA1669 ITR04064 ITR04065 ITR04066 ITR04067 ITR04068 PDF

    ENN3011

    Abstract: No abstract text available
    Text: Ordering number:ENN3011 PNP Epitaxial Planar Silicon Transistors 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Package Dimensions • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).


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    ENN3011 2SA1682 VCEO300V) 2018B 2SA1682] ENN3011 PDF

    2SA1689

    Abstract: ITR04154 ITR04155 ITR04156 ITR04157
    Text: Ordering number:ENN3233 PNP Epitaxial Planar Silicon Transistors 2SA1689 TV Camera Deflection High-Voltage Driver Applications Features Package Dimensions unit:mm 2003B [2SA1689] 5.0 4.0 4.0 5.0 • High breakdown voltage. · Small reverse transfer capacitance and excellent high


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    ENN3233 2SA1689 2003B 2SA1689] SC-43 2SA1689 ITR04154 ITR04155 ITR04156 ITR04157 PDF

    2sa160

    Abstract: 2SA1607 2SC4168 ITR04038 ITR04039 ITR04040 ITR04041
    Text: Ordering number:ENN2479B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. unit:mm 2018B 0.4 0.16 0 to 0.1


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    ENN2479B 2SA1607/2SC4168 2018B 2SA1607/2SC4168] 2SA1607 2sa160 2SA1607 2SC4168 ITR04038 ITR04039 ITR04040 ITR04041 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1593/2SC4135 Ordering number : EN2511B SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity


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    2SA1593/2SC4135 EN2511B 2SA1593/2SC4135-applied 2SA1593 PDF

    EN2511

    Abstract: 2SC1593 2SC159 C4135 ITR04022 S1514
    Text: 2SA1593/2SC4135 Ordering number : EN2511B SANYO Semiconductors DATA SHEET 2SA1593/2SC4135 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Applications • Power supplies, relay derivers, lamp drivers Features • • • • High breakdown voltage and large current capacity


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    EN2511B 2SA1593/2SC4135 2SA1593/2SC4135-applied 2SA1593 EN2511 2SC1593 2SC159 C4135 ITR04022 S1514 PDF

    en2510

    Abstract: No abstract text available
    Text: 2SC4134 Ordering number : EN2510B SANYO Semiconductors DATA SHEET 2SC4134 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • Power supplies, relay drivers, lamp drivers Features • • • • High breakdown voltage and large current capacity


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    EN2510B 2SC4134 2SC4134-applied en2510 PDF

    CRIMP TOOL 8526-1344

    Abstract: as3582 ASN-E0052 SN 1004 souriau 8522-1.001 M22520 8526-1344 VG96912 8599-0721 8522-2-001 8522-2142* SOURIAU
    Text: 8ST Series Description Applications • A high density connector from 1 to 128 contacts • Sizes 22D, 20, 16, 12, # 16 coax and # 8 triax • Bayonet locking system • MIL-C 38999 Series I contact layouts • 100% scoop proof • EMI/RFI shielding and shell-to-shell


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    SN1097-16- SN1097-18- SN1097-20- SN1097-22- SN1097-24- SN1097-11 SN1097-13 SN1097-15 SN1097-17 SN1097-19 CRIMP TOOL 8526-1344 as3582 ASN-E0052 SN 1004 souriau 8522-1.001 M22520 8526-1344 VG96912 8599-0721 8522-2-001 8522-2142* SOURIAU PDF

    2044B

    Abstract: 2SA1641 ITR04055 ITR04056
    Text: Ordering number:ENN2926A PNP Epitaxial Planar Silicon Transistors 2SA1641 High-Current Switching Applications Package Dimensions unit:mm 2045B [2SA1641] 2.3 1.5 6.5 5.0 4 5.5 • Adoption of FBET, MBIT processes. · Low saturation voltage. · Fast switching speed.


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    ENN2926A 2SA1641 2045B 2SA1641] 2SA1641-used 2044B 2044B 2SA1641 ITR04055 ITR04056 PDF

    ITR04135

    Abstract: 2SA1656 2SA1688 ITR04133 ITR04134
    Text: Ordering number:ENN2798A PNP Epitaxial Planar Silicon Transistors 2SA1688 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Ideally suited for use in FM RF amplifiers, mixers, oscillators. converters, and IF amplifiers.


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    ENN2798A 2SA1688 2059B 2SA1688] 100MHz) 2SA1688applied ITR04135 2SA1656 2SA1688 ITR04133 ITR04134 PDF

    LA4360N

    Abstract: LA4630 LA4630N LA4360 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM 405BTL SIP18H 40w bass amplifier using a 12v dc supply 0.033uF N1003
    Text: Ordering number:ENN3227B Monolithic Linear IC LA4630N 9V/12V 3-Dimension Power IC for Radio Cassette Recorders Features Package Dimensions • Stereo section 9V/3Ω 3Wx2, 12V/3Ω 5W×2 : NFcapacitorless power • Super bass section 9V/3Ω 6W, 12V/3Ω 10W : output capacitor, B-S capacitorless power


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    ENN3227B LA4630N V/12V 109A-SIP18H LA4630N] LA4360N LA4630 LA4630N LA4360 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM 405BTL SIP18H 40w bass amplifier using a 12v dc supply 0.033uF N1003 PDF

    2SA1682

    Abstract: ITR04075 ITR04076
    Text: 2SA1682 Ordering number : EN3011B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features • • • • High breakdown voltage VCEO≥300V . Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).


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    2SA1682 EN3011B VCEO300V) 2SA1682 ITR04075 ITR04076 PDF

    2SA1683

    Abstract: N1003 2SC4414 ITR04083 ITR04084 ITR04085
    Text: Ordering number:ENN3012 PNP Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions • Adoption of FBET process. · High breakdown voltage : VCEO>80V.


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    ENN3012 2SA1683/2SC4414 2SA1683/2SC4414] 2SA1683 2SA1683 N1003 2SC4414 ITR04083 ITR04084 ITR04085 PDF

    2SA1592

    Abstract: 2044B
    Text: Ordering number:ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers. unit:mm 2045B Features [2SA1592/2SC4134] 2.3 5.5 1.5 6.5


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    ENN2510A 2SA1592/2SC4134 2045B 2SA1592/2SC4134] 2SA1592/ 2SC4134-applied 2044B 2SA1592 2044B PDF

    EN3011

    Abstract: marking CS
    Text: 2SA1682 Ordering number : EN3011A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features • • • • High breakdown voltage VCEO≥300V . Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ).


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    EN3011A 2SA1682 VCEO300V) EN3011 marking CS PDF

    N1003

    Abstract: MCH6413 75531
    Text: Ordering number : ENN7553 MCH6413 N-Channel Silicon MOSFET MCH6413 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2193A [MCH6413] 0.25 • Package Dimensions 0.3 5 6 3 2 0.65 1 0.15 1.6


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    ENN7553 MCH6413 MCH6413] N1003 MCH6413 75531 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications Package Dimensions • Power supplies, relay derivers, lamp drivers. unit:mm 2045B Features [2SA1593/2SC4135] 2.3 5.5 1.5


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    ENN2511A 2SA1593/2SC4135 2045B 2SA1593/2SC4135] 2SA1593/ 2SC4135-applied 2044B PDF

    2SA1685

    Abstract: 2SC4443 ITR04099 ITR04100 ITR04101 ITR04102
    Text: Ordering number:ENN3200 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. unit:mm 2059B 0.15 0.2 0.425


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    ENN3200 2SA1685/2SC4443 2059B 2SA1685/2SC4443] 2SA1685 2SA1685 2SC4443 ITR04099 ITR04100 ITR04101 ITR04102 PDF

    40w bass amplifier using a 12v dc supply

    Abstract: 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM la4630n LA4360 LA4360N 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM BTL audio 50W
    Text: Ordering number : ENN3227E Monolithic Linear IC For Radio Cassette Recorders LA4630N 9V/12V 3-Dimension Power Amplifier Features • Stereo section 9V/3Ω 3Wx2, 12V/3Ω 5W×2 : NF-capacitorless power • Super bass section 9V/3Ω 6W, 12V/3Ω 10W : output capacitor, B-S capacitorless power


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    ENN3227E LA4630N V/12V 40w bass amplifier using a 12v dc supply 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM la4630n LA4360 LA4360N 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM BTL audio 50W PDF

    44uH

    Abstract: e526hn-100309
    Text: 1. Mechanical Dimensions: 2 . S ch e m atic: o- -o • B.5T 8.5T o- -o 3. Electrical Ind uctance: 2.00 Q: Top view 100 Specifications: @25°C D .44uH N om inal 5 0 M H z , 0 .1 V Min @ 50M H z D.1V Tuning Capacitance Range: 23.0pF ±3 % ®50MHz 0.1V 1. Solderabilrty: Leads shall meet MIL—STD—202G,


    OCR Scan
    50MHz, 50MHz MIL-STD-202G. UL94V-0 E151556 E526HN-100309 44uH e526hn-100309 PDF

    175C

    Abstract: F100371 F371 VM18 VM08
    Text: & N a ti on al Semiconductor M ILIT A R Y DATA SHEET Original Creation Date: Last Update Date: Last Major Revision Date: N100371 —X R EV OBO 10/30/95 08/28/96 10/30/95 LOW P OWER TRIPLE 4-INPUT M U L TIPLEXER WITH ENABLE General Description The F100371 contains three 4— Input multiplexers which share a common decoder inputs SO


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    MN100371 F100371 71DMQB 71FMQB MN100371â J24ERJ P000092A P000093A 175C F371 VM18 VM08 PDF