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    N2504 Search Results

    N2504 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    H5N2504DSTR-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 7A 630Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    H5N2504DL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 7A 630Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
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    N2504 Price and Stock

    Diodes Incorporated ZXTN25040DFLTA

    TRANS NPN 40V 1.5A SOT-23-3
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    DigiKey ZXTN25040DFLTA Digi-Reel 19,608 1
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    ZXTN25040DFLTA Reel 3,000 3,000
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    Newark ZXTN25040DFLTA Cut Tape 2,870 5
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    ZXTN25040DFLTA Reel 3,000
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    RS ZXTN25040DFLTA Bulk 25
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    Avnet Silica ZXTN25040DFLTA 30,000 10 Weeks 3,000
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    New Advantage Corporation ZXTN25040DFLTA 225,000 1
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    Win Source Electronics ZXTN25040DFLTA 9,198
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    Cal-Chip Electronics CHV0603N2504R3CCT

    HVCAP0603 COG 4.3PF .25PF 250V
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    DigiKey CHV0603N2504R3CCT Reel 4,000 4,000
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    CHV0603N2504R3CCT Digi-Reel 4,000 1
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    Cal-Chip Electronics CHV0805N250470JCT

    HVCAP0805 COG 47PF 5% 250V
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    DigiKey CHV0805N250470JCT Digi-Reel 4,000 1
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    Cal-Chip Electronics CHV1206N250471JCT

    HVCAP1206 COG 470PF 10% 250V
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    DigiKey CHV1206N250471JCT Cut Tape 3,823 1
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    Cal-Chip Electronics CHV1206N250470JCT

    HVCAP1206 COG 47PF 5% 250V
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    DigiKey CHV1206N250470JCT Cut Tape 3,700 1
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    N2504 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MCH3460

    Abstract: No abstract text available
    Text: MCH3460 Ordering number : ENN8111 MCH3460 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH3460 ENN8111 900mm2 MCH3460 PDF

    064 diode

    Abstract: MCH3333 marking YJ AM
    Text: MCH3333 Ordering number : ENN7989 MCH3333 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH3333 ENN7989 900mm2 064 diode MCH3333 marking YJ AM PDF

    MCH3320

    Abstract: No abstract text available
    Text: MCH3320 Ordering number : ENN7992 MCH3320 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH3320 ENN7992 900mm2 MCH3320 PDF

    MCH3416

    Abstract: No abstract text available
    Text: MCH3416 Ordering number : ENN7996 N-Channel Silicon MOSFET MCH3416 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH3416 ENN7996 900mm2 MCH3416 PDF

    MCH3360

    Abstract: No abstract text available
    Text: MCH3360 Ordering number : ENN8109 MCH3360 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH3360 ENN8109 900mm2 MCH3360 PDF

    MCH3421

    Abstract: No abstract text available
    Text: MCH3421 Ordering number : ENN7997 MCH3421 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH3421 ENN7997 900mm2 MCH3421 PDF

    V 2238

    Abstract: V2238 81062 N2504 CPH6612
    Text: CPH6612 注文コード No. N 8 1 0 6 三洋半導体データシート N CPH6612 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・1.8V 駆動。


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    CPH6612 900mm2 900mm2 IT07177 IT07178 V 2238 V2238 81062 N2504 CPH6612 PDF

    LA6563

    Abstract: HSOP36R LB-656 op829 11K23 b8555 78875
    Text: 注文コード No.N 7 8 8 7 B 半導体データシート No.N7887A をさしかえてください。 モノリシックリニア集積回路 CD 用 LA6563 4ch ブリッジ BTL ドライバ 概要 LA6563は、CD用4chブリッジ(BTL)ドライバである。


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    N7887A LA6563 LA6563CD4ch N2504 B8-5556 LB6563 LA6563 HSOP36R LB-656 op829 11K23 b8555 78875 PDF

    MCH3421

    Abstract: No abstract text available
    Text: MCH3421 注文コード No. N 7 9 9 7 三洋半導体データシート N MCH3421 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動。


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    MCH3421 900mm2 400mA 400mA, IT06002 900mm2 IT07674 IT07671 MCH3421 PDF

    CPH6612

    Abstract: No abstract text available
    Text: CPH6612 Ordering number : ENN8106 N-Channel Silicon MOSFET CPH6612 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


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    CPH6612 ENN8106 900mm2 CPH6612 PDF

    marking WM

    Abstract: MCH3360
    Text: MCH3360 Ordering number : EN8109A SANYO Semiconductors DATA SHEET MCH3360 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    MCH3360 EN8109A 900mm2 marking WM MCH3360 PDF

    MCH6627

    Abstract: No abstract text available
    Text: MCH6627 Ordering number : ENN8000 MCH6627 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.


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    MCH6627 ENN8000 MCH6627 PDF

    MARKING WL

    Abstract: MCH3359
    Text: MCH3359 Ordering number : ENN8108 MCH3359 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH3359 ENN8108 900mm2 MARKING WL MCH3359 PDF

    MARKING ZG

    Abstract: MCH3431 8025-2
    Text: MCH3431 Ordering number : EN8025A SANYO Semiconductors DATA SHEET MCH3431 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    MCH3431 EN8025A PW10s, 900mm20 MARKING ZG MCH3431 8025-2 PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    PDF

    CPH5614

    Abstract: No abstract text available
    Text: CPH5614 Ordering number : ENN8119 N-Channel Silicon MOSFET CPH5614 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.


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    CPH5614 ENN8119 600mm2 CPH5614 PDF

    MCH3431

    Abstract: 8025-2 MARKING ZG
    Text: MCH3431 Ordering number : ENN8025 MCH3431 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH3431 ENN8025 900mm2 MCH3431 8025-2 MARKING ZG PDF

    MCH3322

    Abstract: Marking jx
    Text: MCH3322 Ordering number : ENN7994 MCH3322 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH3322 ENN7994 900mm2 MCH3322 Marking jx PDF

    MCH6627

    Abstract: D-0300
    Text: MCH6627 注文コード No. N 8 0 0 0 三洋半導体データシート N MCH6627 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗 , 超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを 1 パッケージに


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    MCH6627 900mm2 IT03317 900mm2 IT04070 IT04071 MCH6627 D-0300 PDF

    CPH6329

    Abstract: No abstract text available
    Text: CPH6329 Ordering number : ENN8001 CPH6329 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    CPH6329 ENN8001 900mm2 CPH6329 PDF

    MCH3415

    Abstract: No abstract text available
    Text: MCH3415 Ordering number : ENN7995 MCH3415 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    MCH3415 ENN7995 900mm2 MCH3415 PDF

    Z115

    Abstract: 5-12-9B
    Text: DATE DRAWING NUMBER L D C -N 2 5 0 4 R I REPLACES PART# LDQ-N254RI REPLACES PART# LDQ-N2504RI ELECTRO-OPTICAL CHARACTERISTICS TA - 2 5 'C PARAMETER MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE AXIAL INTENSITY EMITTED COLOR; FONT COLOR l SEGMENT COLOR:


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    LDC-N2504RI LDQ-N254RI LDQ-N2504RI TA-25 lr-10O If-10mA 5-12-9B 635nm Z115 PDF

    HN462532G

    Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
    Text: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .


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    PDF

    transistor N342

    Abstract: No abstract text available
    Text: r Numerical Index Part Number Page 100. .34 101. . 36 102. . 34 103. .34 105. .38 106. .38 107. . 39


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    PDF