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    ND8J80W Search Results

    ND8J80W Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ND8J80W-1T NEC 80 GHz, silicon CW IMPATT diode Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: ND8J80W1T Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power.15 Frequency Min. (Hz)70G Frequency Max. (Hz)87G Efficiency Min.4.5 V(Oper.) Nom.(V) Oper. Voltage16 I(Oper.) Typ.(A) Oper. Current160m Semiconductor MaterialSilicon Package StyleScrew


    Original     		PDF ND8J80W1T Voltage16 Current160m

    impatt diode

    Abstract: DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22
    Text: NEC/ CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE T - o 7 i ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz


    OCR Scan     		PDF b427414 ND8N40W ND8L60W-1T ND8J80W ND8G96W-1T impatt diode DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22

    impatt diode

    Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
    Text: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz


    OCR Scan     		PDF b427414 ND487C1-3R ND487C2-00 ND487C2-3P ND487C2-3R ND487R1-00 ND487R1-3P ND487R1-3R ND487R2-00 ND487R2-3P impatt diode 1ST23 ND487 ND8L60W1T impatt 1ST11 ND8M30-1N