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    NDS99 Price and Stock

    onsemi NDS9945

    MOSFET 2N-CH 60V 3.5A 8SOIC
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    DigiKey NDS9945 Reel 2,500 2,500
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    Avnet Americas NDS9945 Ammo Pack 9 Weeks, 2 Days 1
    • 1 $1.81
    • 10 $1.45
    • 100 $1.25
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    NDS9945 Reel 0 Weeks, 2 Days 893
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    NDS9945 Reel 4 Weeks 431
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    NDS9945 Reel 22 Weeks 2,500
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    Mouser Electronics NDS9945 14,805
    • 1 $1.79
    • 10 $1.39
    • 100 $1.13
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    Newark NDS9945 Cut Tape 3,088 1
    • 1 $1.06
    • 10 $0.967
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    NDS9945 Reel 2,500
    • 1 $0.998
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    Onlinecomponents.com NDS9945 2,000
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    Quest Components NDS9945 944
    • 1 $2.1576
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    • 1000 $0.89
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    Rochester Electronics NDS9945 1,146 1
    • 1 $0.8461
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    • 100 $0.7953
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    Ameya Holding Limited NDS9945 2,175
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    Richardson RFPD NDS9945 2,500
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    Avnet Asia NDS9945 22 Weeks 2,500
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    Avnet Silica NDS9945 23 Weeks 2,500
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    Chip1Stop NDS9945 2,500
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    NDS9945 690
    • 1 $1.14
    • 10 $0.9979
    • 100 $0.873
    • 1000 $0.78
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    EBV Elektronik NDS9945 24 Weeks 2,500
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    Flip Electronics NDS9945 1,654
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    Master Electronics NDS9945 2,000
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    onsemi NDS9933

    MOSFET 2P-CH 20V 3.2A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS9933 Reel 2,500
    • 1 -
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    • 10000 $0.89772
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    Rochester Electronics LLC NDS9936

    MOSFET 2N-CH 30V 5A 8SOIC
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    DigiKey NDS9936 Bulk 513
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    • 1000 $0.59
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    Rochester Electronics LLC NDS9947

    MOSFET 2P-CH 20V 3.5A 8SOIC
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    DigiKey NDS9947 Bulk 430
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    onsemi NDS9952A

    MOSFET N/P-CH 30V 3.7A 8SOIC
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    DigiKey NDS9952A Reel
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    Avnet Americas NDS9952A Reel 4 Weeks 796
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    • 1000 $0.45259
    • 10000 $0.41488
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    Newark NDS9952A Cut Tape 2,500
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    NDS9952A Reel 2,500
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    Rochester Electronics NDS9952A 6,065 1
    • 1 $0.4584
    • 10 $0.4584
    • 100 $0.4309
    • 1000 $0.3896
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    Find more NDS99 price and stock on Findchips.com

    NDS99 Datasheets (95)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS9925A Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9925A National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9925A National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9925A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9925A National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9925A National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9933 National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9933 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 3.2A 8-SOIC Original PDF
    NDS9933 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9933A Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9933A Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Trans Original PDF
    NDS9933A National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9933A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9933A Fairchild Semiconductor 8192-Bit Standard 2-Wire Bus Interface Serial EEPROM Scan PDF
    NDS9933A National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9936 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9936 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Trans Original PDF
    NDS9936 National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9936 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9936 National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    NDS99 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS9955

    Abstract: SOIC-16
    Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9955 OT-23 NDS9955 SOIC-16

    NDS9936

    Abstract: No abstract text available
    Text: February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9936 NDS9936

    PF5085

    Abstract: NDS9959
    Text: February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9959 PF5085 NDS9959

    NDS9925A

    Abstract: SOIC-16 8G24
    Text: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF NDS9925A OT-23 NDS9925A SOIC-16 8G24

    NDS9925A

    Abstract: No abstract text available
    Text: N July 1996 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDS9925A NDS9925A

    Untitled

    Abstract: No abstract text available
    Text: NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		PDF NDS9948

    Untitled

    Abstract: No abstract text available
    Text: February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9959

    Untitled

    Abstract: No abstract text available
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDS9952A

    NDS9953A

    Abstract: No abstract text available
    Text: February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDS9953A NDS9953A

    NDS9952A

    Abstract: No abstract text available
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDS9952A NDS9952A

    NDS9957

    Abstract: No abstract text available
    Text: N February 1996 NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDS9957 NDS9957

    NDS9943

    Abstract: No abstract text available
    Text: N February 1996 NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very


    Original     		PDF NDS9943 NDS9943

    IRF540

    Abstract: IRF540 application IRF5402 NDS9945 irf540 equivalent A3933EQ IRF5405 j142 30D2 J132
    Text: VCCOUT VMOTOR 1 .1uf W1 JUMPER J25 3 J13 2 27 BRKSEL J15 2 J17 BRAKE 1 2 H1 1 J18 26 24 2 20 22 1 PWM GHB CB BRKSEL SB BRAKE GLB 9 CB 10 SB 8 GLB 7 H1 GHC GHC H3 2 R11 100K C9 470pf SC GLC 5 CC 6 SC 4 GLC 3 .047uf 2 J14 2 2 U3B 1 NDS9945 1 4 3 3 30 R9 30 J19


    Original     		PDF 470pf 047uf NDS9945 IRF540 NDS9945 IRF540 IRF540 application IRF5402 irf540 equivalent A3933EQ IRF5405 j142 30D2 J132

    NDS9942

    Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
    Text: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3


    OCR Scan     		PDF bSD1130 NDS9942 NDS9943* NDS9952 NDS9958* National Semiconductor Discrete catalog SOIC-8 NDS9943 NDS9958 P channel SOIC8

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor” May 1996 NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement m ode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology.


    OCR Scan     		PDF NDS9933

    AAW2

    Abstract: CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A
    Text: N/l IC O N D U C TO R tm NDS9933A Dual P-Channel Enhancem ent M ode Field Effect Transistor Features General Description T h is P -C h a n n e l e n h a n c e m e n t m o d e p o w e r field e f­ • -2 .8 A , - 2 0 V. R,D S o n fe c t tra n s is to r is p ro d u c e d u s in g F a irc h ild ’s p ro p ri­


    OCR Scan     		PDF NDS9933A AAW2 CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A

    NDS9955

    Abstract: No abstract text available
    Text: February 1996 FAIRCHILD iM IC D N D U C T O R tm NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS9955 NDS99EE

    la7840

    Abstract: No abstract text available
    Text: F A I R C H I L February 1996 D :MICÜNDUCTÜR- m NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel en hance m en t m ode pow er field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS9957 transie50 S99E7 NDS99E7 la7840

    transistor 1gs

    Abstract: A7840
    Text: May 1996 N NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDS9933 S9933 transistor 1gs A7840

    9933A

    Abstract: No abstract text available
    Text: F A IR C H IL D S eptem ber 1996 M lC O N D U C T O R NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS9933A 9933A

    S9943

    Abstract: NDS9943
    Text: February 1996 N NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e dual N - and P -C h a n n e l e n h a n c e m en t m o d e po w er field e ffec t transistors a re prod uced using • N -C h a n n e l 3 .0 A , 2 0 V , R r


    OCR Scan     		PDF NDS9943 S9943

    NDS9955

    Abstract: No abstract text available
    Text: February 1996 N NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel enhance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is


    OCR Scan     		PDF NDS9955 NDS9955 0D33347

    785-500

    Abstract: it 785-500 NDS9947
    Text: F e b ru a ry 1 9 9 6 N NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e P -C hannel en hance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is


    OCR Scan     		PDF NDS9947 NDS9947 0D33347 785-500 it 785-500

    NDS9936

    Abstract: No abstract text available
    Text: February 1996 N NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDS9936 an10s NDS9936 0D33347