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    NDS99 Price and Stock

    onsemi NDS9948

    MOSFET 2P-CH 60V 2.3A 8SOIC
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    DigiKey NDS9948 Cut Tape 6,684 1
    • 1 $1.09
    • 10 $0.683
    • 100 $1.09
    • 1000 $0.31336
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    NDS9948 Digi-Reel 6,684 1
    • 1 $1.09
    • 10 $0.683
    • 100 $1.09
    • 1000 $0.31336
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    NDS9948 Reel 5,000 2,500
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    Avnet Americas NDS9948 Reel 10,000 16 Weeks 2,500
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    NDS9948 Reel 2,500
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    Mouser Electronics NDS9948 18,651
    • 1 $0.87
    • 10 $0.586
    • 100 $0.403
    • 1000 $0.293
    • 10000 $0.259
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    Newark NDS9948 Reel 10,000 2,500
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    NDS9948 Cut Tape 5,730 5
    • 1 $0.763
    • 10 $0.664
    • 100 $0.474
    • 1000 $0.349
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    NDS9948 Reel 2,500
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    Onlinecomponents.com NDS9948
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    Bristol Electronics NDS9948 110
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    Rochester Electronics NDS9948 277 1
    • 1 $0.2518
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    • 100 $0.2367
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    TME NDS9948 2,056 1
    • 1 $0.77
    • 10 $0.512
    • 100 $0.352
    • 1000 $0.317
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    Richardson RFPD NDS9948 5,000
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    Avnet Asia NDS9948 16 Weeks 5,000
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    Avnet Silica NDS9948 17 Weeks 2,500
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    EBV Elektronik NDS9948 40,000 18 Weeks 2,500
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    New Advantage Corporation NDS9948 20,000 1
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    onsemi NDS9945

    MOSFET 2N-CH 60V 3.5A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS9945 Cut Tape 5,219 1
    • 1 $2.53
    • 10 $1.629
    • 100 $2.53
    • 1000 $0.82387
    • 10000 $0.82387
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    NDS9945 Reel 2,500 2,500
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    • 10000 $0.72525
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    Avnet Americas NDS9945 Ammo Pack 9 Weeks, 2 Days 1
    • 1 $1.15
    • 10 $1.49
    • 100 $1.26
    • 1000 $1.26
    • 10000 $1.26
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    NDS9945 Reel 0 Weeks, 2 Days 893
    • 1 $0.6832
    • 10 $0.6832
    • 100 $0.6832
    • 1000 $0.6832
    • 10000 $0.6832
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    NDS9945 Reel 16 Weeks 2,500
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    • 10000 $0.69071
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    NDS9945 Reel 16 Weeks 2,500
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    Mouser Electronics NDS9945 14,735
    • 1 $1.68
    • 10 $1.22
    • 100 $0.961
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    Newark NDS9945 Cut Tape 3,088 1
    • 1 $1.06
    • 10 $0.967
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    NDS9945 Reel 2,500
    • 1 $0.998
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    • 10000 $0.871
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    Onlinecomponents.com NDS9945 2,000
    • 1 -
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    • 1000 $1.11
    • 10000 $0.71
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    Quest Components NDS9945 944
    • 1 $2.1576
    • 10 $2.1576
    • 100 $2.1576
    • 1000 $0.89
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    Rochester Electronics NDS9945 1,146 1
    • 1 $0.8058
    • 10 $0.8058
    • 100 $0.7575
    • 1000 $0.6849
    • 10000 $0.6849
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    Richardson RFPD NDS9945 2,500
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    • 10000 $0.73
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    Avnet Asia NDS9945 16 Weeks 2,500
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    Avnet Silica NDS9945 17 Weeks 2,500
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    EBV Elektronik NDS9945 18 Weeks 2,500
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    Flip Electronics NDS9945 1,654
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    Master Electronics NDS9945 2,000
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    onsemi NDS9933

    MOSFET 2P-CH 20V 3.2A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS9933 Reel 2,500
    • 1 -
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    • 10000 $0.868
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    onsemi NDS9955

    MOSFET 2N-CH 50V 3A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS9955 Cut Tape 1
    • 1 $2.25
    • 10 $2.25
    • 100 $2.25
    • 1000 $2.25
    • 10000 $2.25
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    NDS9955 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.61875
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    onsemi NDS9959

    MOSFET 2N-CH 50V 2A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS9959 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.35227
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    NDS9959 Cut Tape 1
    • 1 $1.34
    • 10 $1.34
    • 100 $1.34
    • 1000 $1.34
    • 10000 $1.34
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    Find more NDS99 price and stock on Findchips.com

    NDS99 Datasheets (95)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS9925A Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9925A National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9925A National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9925A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9925A National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9925A National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9933 National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9933 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 3.2A 8-SOIC Original PDF
    NDS9933 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9933A Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9933A Fairchild Semiconductor Dual P-Channel Enhancement Mode Field Effect Trans Original PDF
    NDS9933A National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9933A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9933A Fairchild Semiconductor 8192-Bit Standard 2-Wire Bus Interface Serial EEPROM Scan PDF
    NDS9933A National Semiconductor Dual P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS9936 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9936 Fairchild Semiconductor Dual N-Channel Enhancement Mode Field Effect Trans Original PDF
    NDS9936 National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS9936 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS9936 National Semiconductor Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    NDS99 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NDS9955

    Abstract: SOIC-16
    Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS9955 OT-23 NDS9955 SOIC-16 PDF

    NDS9936

    Abstract: No abstract text available
    Text: February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS9936 NDS9936 PDF

    PF5085

    Abstract: NDS9959
    Text: February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS9959 PF5085 NDS9959 PDF

    NDS9925A

    Abstract: SOIC-16 8G24
    Text: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		NDS9925A OT-23 NDS9925A SOIC-16 8G24 PDF

    NDS9925A

    Abstract: No abstract text available
    Text: N July 1996 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		NDS9925A NDS9925A PDF

    Untitled

    Abstract: No abstract text available
    Text: NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage


    Original     		NDS9948 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS9959 PDF

    Untitled

    Abstract: No abstract text available
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDS9952A PDF

    NDS9953A

    Abstract: No abstract text available
    Text: February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS9953A NDS9953A PDF

    NDS9952A

    Abstract: No abstract text available
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		NDS9952A NDS9952A PDF

    NDS9957

    Abstract: No abstract text available
    Text: N February 1996 NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS9957 NDS9957 PDF

    NDS9943

    Abstract: No abstract text available
    Text: N February 1996 NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very


    Original     		NDS9943 NDS9943 PDF

    IRF540

    Abstract: IRF540 application IRF5402 NDS9945 irf540 equivalent A3933EQ IRF5405 j142 30D2 J132
    Text: VCCOUT VMOTOR 1 .1uf W1 JUMPER J25 3 J13 2 27 BRKSEL J15 2 J17 BRAKE 1 2 H1 1 J18 26 24 2 20 22 1 PWM GHB CB BRKSEL SB BRAKE GLB 9 CB 10 SB 8 GLB 7 H1 GHC GHC H3 2 R11 100K C9 470pf SC GLC 5 CC 6 SC 4 GLC 3 .047uf 2 J14 2 2 U3B 1 NDS9945 1 4 3 3 30 R9 30 J19


    Original     		470pf 047uf NDS9945 IRF540 NDS9945 IRF540 IRF540 application IRF5402 irf540 equivalent A3933EQ IRF5405 j142 30D2 J132 PDF

    NDS9942

    Abstract: National Semiconductor Discrete catalog SOIC-8 NDS9952 NDS9943 NDS9958 P channel SOIC8
    Text: bôE D • bS0113G QG3cll4Tl4 T45 M N S C S NATL SEMICOND DISCRETE Complemetary N-P Channel 2 Max NDS9942 0.125 0.25 3 2 N Channel 0.2 0.35 -2.5 NDS9943* 0.125 0.25 3 2 N Channel 0.16 0.3 -2.8 0.1 0.15 3 2 N Channel 0.25 0.4 -2.3 0.1 0.15 3.5 0.11 0.19 -3


    OCR Scan     		bSD1130 NDS9942 NDS9943* NDS9952 NDS9958* National Semiconductor Discrete catalog SOIC-8 NDS9943 NDS9958 P channel SOIC8 PDF

    Untitled

    Abstract: No abstract text available
    Text: National Semiconductor” May 1996 NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement m ode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology.


    OCR Scan     		NDS9933 PDF

    AAW2

    Abstract: CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A
    Text: N/l IC O N D U C TO R tm NDS9933A Dual P-Channel Enhancem ent M ode Field Effect Transistor Features General Description T h is P -C h a n n e l e n h a n c e m e n t m o d e p o w e r field e f­ • -2 .8 A , - 2 0 V. R,D S o n fe c t tra n s is to r is p ro d u c e d u s in g F a irc h ild ’s p ro p ri­


    OCR Scan     		NDS9933A AAW2 CBVK741B019 F011 F63TNR FDS9953A L86Z NDS9933A PDF

    NDS9955

    Abstract: No abstract text available
    Text: February 1996 FAIRCHILD iM IC D N D U C T O R tm NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS9955 NDS99EE PDF

    la7840

    Abstract: No abstract text available
    Text: F A I R C H I L February 1996 D :MICÜNDUCTÜR- m NDS9957 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e N -C hannel en hance m en t m ode pow er field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS9957 transie50 S99E7 NDS99E7 la7840 PDF

    transistor 1gs

    Abstract: A7840
    Text: May 1996 N NDS9933 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDS9933 S9933 transistor 1gs A7840 PDF

    9933A

    Abstract: No abstract text available
    Text: F A IR C H IL D S eptem ber 1996 M lC O N D U C T O R NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		NDS9933A 9933A PDF

    S9943

    Abstract: NDS9943
    Text: February 1996 N NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T h e s e dual N - and P -C h a n n e l e n h a n c e m en t m o d e po w er field e ffec t transistors a re prod uced using • N -C h a n n e l 3 .0 A , 2 0 V , R r


    OCR Scan     		NDS9943 S9943 PDF

    NDS9955

    Abstract: No abstract text available
    Text: February 1996 N NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e N -C hannel enhance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is


    OCR Scan     		NDS9955 NDS9955 0D33347 PDF

    785-500

    Abstract: it 785-500 NDS9947
    Text: F e b ru a ry 1 9 9 6 N NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor Features General Description T h e s e P -C hannel en hance m en t m ode pow er field effect tra nsistors are produced using N ational's proprietary, high cell density, D M O S technology. T h is v e ry high de nsity process is


    OCR Scan     		NDS9947 NDS9947 0D33347 785-500 it 785-500 PDF

    NDS9936

    Abstract: No abstract text available
    Text: February 1996 N NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		NDS9936 an10s NDS9936 0D33347 PDF