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NEC Electronics Group NE32584C-T1 TRANSISTOR,MESFET,N-CHAN,4V V(BR)DSS,20MA I(DSS),SOT-173VAR
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NE32584C Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
NE32584C	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE32584C	NEC	Semiconductor Selection Guide	Original	PDF
NE32584C	NEC	Semiconductor Selection Guide 1995	Original	PDF
NE32584C	Unknown		Scan	PDF
NE32584C-S	NEC	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET	Original	PDF
NE32584C-SL	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE32584C-T1	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF
NE32584C-T1	NEC	Ultra low noise pseudomorphic HJ FET.	Original	PDF
NE32584C-T1A	NEC	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET	Original	PDF

NE32584C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
nec 8772 Abstract: LD 7522 142.58 NE32584C NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001 Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE	Original	NE32584C NE32584C NE32584C-S NE32584C-T1 24-Hour nec 8772 LD 7522 142.58 NE32584C-S NE32584C-T1 cha 9935 K 4017 j50 0513 5 5252 f 1001	PDF
d768 transistor Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442 Text: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent	Original	NE32584C NE32584C d768 transistor 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442	PDF
0.01pF Abstract: No abstract text available Text: NONLINEAR MODEL NE32584C SCHEMATIC see Page 2 FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO -0.6723 RG 3 VTOSC RD 2 ALPHA 4 RS 2 BETA 0.115 RGMET GAMMA 0.08 KF GAMMADC 0.07 AF 1 Q 2 TNOM 27 DELTA 0.5 XTI 3 VBI 0.715 EG 1.43 IS 3e-13	Original	3e-13 5e-12 13e-12 3e-12 02e-12 NE32584C NE32584C 001pF 0.01pF	PDF
NE32584 Abstract: FET 3878 NE32584C NE32584C-S NE32584C-SL NE32584C-T1 162-7 MAG Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.2 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz 24 21 1.0 • LG ≤ 0.20 µm, WG = 200 µm • LOW COST METAL CERAMIC PACKAGE	Original	NE32584C NE32584C NE32584C-S NE32584C-T1 NE32584C-SL 84C-SL 24-Hour NE32584 FET 3878 NE32584C-S NE32584C-SL NE32584C-T1 162-7 MAG	PDF
NE42484A Abstract: ne32584c NE33284A Text: Suggested Low Noise Amplifier Lineups 4 GHz Commercial LNA Performance 25°K LNA NE33284A NF dB GA (dB) 0.35 15.0 NE42484A 0.38 15.6 NE42484A 0.38 15.6 NF: 0.362 GA: 46.2 12 GHz Commercial LNA Performance 35°K LNA NE32584C NF (dB) GA (dB) 0.45 12.5 EXCLUSIVE NORTH AMERICAN AGENT FOR	Original	NE33284A NE42484A NE32584C 24-Hour NE42484A ne32584c NE33284A	PDF
micro servo 9g Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518 Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518	PDF
2SK2396 Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××）品名 µPC8119T アプリケーション移動通信電源電圧電流周波数	Original	X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711	PDF
uPD16305 Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.	Original	PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943	PDF
nf025 Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920	Original	X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408	PDF
lg crt monitor circuit diagram Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY	PDF
NE42484 Abstract: NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324 Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 84 1.78 ± 0.2 S 1.78 ± 0.2 D W S G 0.5 ± 0.1 ALL LEADS 1.0 MIN (ALL LEADS)- (84S/84AS) 1.7 MIN (ALL LEADS) (84-SL/84A-SL) 1.7 MAX	Original	84S/84AS) 84-SL/84A-SL) NE32484A NE42484A NE32584C NE76084 NE32984D NE76184A NE33284A NE42484 NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original		PDF
MICROPROCESSOR Z80 Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro	PDF
transistor d525 Abstract: D128 transistor D1439 transistor D128 D1116 transistor d745 D559 transistor d1406 transistor d717 d3140 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF

uPD72002-11 Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508 Text: 品名別検索検索ツール 1. ツールバーのアイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して，検索 F をクリックしてください。	Original	PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508	PDF
NE32584C-T1 Abstract: nec 3435 transistor am 4428 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.	OCR Scan	NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428	PDF
nec 8772 p Abstract: 5252 F 1120 nec 8772 cha 9935 ic an 17807 5252 F 1114 142.58 LD 7522 Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz • Lg < 0.20 ^m, WG = 200 \im	OCR Scan	NE32584C NE32584C NE32584C-S NE32584C-T1 24-Hour nec 8772 p 5252 F 1120 nec 8772 cha 9935 ic an 17807 5252 F 1114 142.58 LD 7522	PDF
NEC k 2134 transistor Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm	OCR Scan	NE32584C NE32584C NE32584C-T1A NE32584C-SL NE32584C-T1 NEC k 2134 transistor k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584	PDF
NE32484C-S Abstract: GA 88 ne32584c NE32584C-SL Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES_ NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, I d s = 10 mA • VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz	OCR Scan	NE32584C NE32584C IS12S21I 00Li545b NE32484C-S NE32484C-T1 NE32584C-SL 84C-SL b42752Â GA 88	PDF
NE32484C-T1 Abstract: No abstract text available Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES V ds = 2 V, Ids = 10 m A • VERY LOW NOISE FIGURE: 0 .4 5 d B T y p ic a l at 12 G H z • HIGH A SSO CIATED GAIN: 1 2 .5 d B T y p ic a l at 12 G H z CO •	OCR Scan	NE32584C S12S21\| NE32584C E32484C NE32484C-T1 E32584C 84C-SL	PDF
Untitled Abstract: No abstract text available Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0.45 dB Typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 21 12.5 dB Typical at 12 GHz m •o • Lg < 0.20 nm, W g = 200	OCR Scan	NE32584C NE32584C 3e-13 5e-12 13e-12 3e-12 02e-12 NE32584C-S NE32584C-T1	PDF
NE32484C-S Abstract: NE32484C-T1 NE32584C Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , Ids = 10 mA • VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz m • L g £ 0 .2 0 p m , W g = 2 00 urn	OCR Scan	NE32584C NE32584C b4275Z5 NE32484C-S NE32484C-T1 NE32584C-SL 84C-SL bM2752S 00b5457	PDF
LORB Abstract: NE2720 NE334S01 Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18	OCR Scan	NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01	PDF
ne71084 Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089 Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0	OCR Scan	NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089	PDF

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NE32584C Price and Stock

NEC Electronics Group NE32584C-T1

NE32584C Datasheets (9)

NE32584C Datasheets Context Search

nec 8772

d768 transistor

0.01pF

NE32584

NE42484A

micro servo 9g

2SK2396

uPD16305

nf025

lg crt monitor circuit diagram

NE42484

2SK2500

MICROPROCESSOR Z80

transistor d525

uPD72002-11

NE32584C-T1

nec 8772 p

NEC k 2134 transistor

NE32484C-S

NE32484C-T1

Untitled

NE32484C-S

LORB

ne71084