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Catalog Datasheet	MFG & Type	Document Tags	PDF
NE32700 Abstract: NE46734 NE32702 NE32708 NE32740A NE32740B NE46700 NE68039 NE94430 Text: N E C / CALIFORNIA SbE D • b4E7414 DD0ES33 374 M N E C C Additional Small Signal Silicon Bipolar Products E LE C T R IC A L CH ARACTERISTICS PAR T N UM BER PACKAGE CODE VCEO V (mA) Pt (W) NE32700 NE32702 NE32708 NE32740A NE32740B CHIP 02 08 40A 40B 12	OCR Scan	ME7414 D00E533 NE32700 NE32702 NE32708 NE32740A NE32740B NE46700 NE46734 NE68039 NE94430	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720	PDF
2SC1924 Abstract: NE32700 Text: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR NE327 SERIES FEATURES_ DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : toN 0.7 ns TYP, toFF 0.5 ns TYP The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode switching applications	OCR Scan	NE327 E32740) NE32740 IS12S21I NE32700 2SC1924 NE32700	PDF
NE99532 Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563 Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de	OCR Scan	NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563	PDF
NE99532 Abstract: NE32700 NE59300 NE32702 NE32708 NE32740A NE32740B NE46700 NE46734 S21E Text: I . _ ^, . Additional Small Signal and Medium Power Silicon Bipolar Products N E C / CALIFORNIA 1SE D • r-3 ^ 0 1 -r-3 /-0/ h427414 0001517 b ■ = E L E C T R IC A L C H A R A C T E R IS T IC S A B S O L U T E M A X IM U M R A T IN G S C cB hFE VCB PART	OCR Scan	b427414 NE32700 NE32702 NE32708 NE32740A NE32740B NE46700 NE46734 NE59300 NE99532 S21E	PDF
2SC1925 Abstract: NE32708 2SC1924 Text: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR NE327 SERIES FEATURES DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : toN 0.7 ns TYP, toFF 0.5 ns TYP The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode switching applications	OCR Scan	NE327 NE32740) NE32740 NE32700 4Z7525 00b5fe 2SC1925 NE32708 2SC1924	PDF
2SC1924 Abstract: NE32700 2sc1925 ne327 NE32708 Text: NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION • ULTRA-HIGH SWITCHING SPEED : to N 0.7 ns TYP, to F F The NE327 series of NPN silicon transistors is designed for use in ultrahigh speed current mode sw itching applications and for use in m icrowave am plifiers up to 1 GHz. Transistors	OCR Scan	NE327 NE32740) E32740 NE32700 2SC1924 2sc1925 NE32708	PDF
transistor IR 324 C Abstract: transistor selection guide Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency	OCR Scan	NE46134 NE85634 NE46134 NE46734 NE68018-T1 transistor IR 324 C transistor selection guide	PDF