NE67400 Search Results

NE67400 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE67400		California Eastern Laboratories	Necs L To Ku Band Low Noise Amplifier N-channel Gaas Mesfet		Original	PDF
NE67400		NEC	L to Ku band low noise amplifier N-channel GaAs MESFET. Idss 20 to 120 mA.		Original	PDF

NE67400 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE674 Abstract: NE67400 NE67483B 0840 057 0615 Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz	Original	NE67400 NE67483B NE674 24-Hour NE67400 NE67483B 0840 057 0615	PDF
NE674 Abstract: NE67483B NEC 3552 NE67400 NE67483 PACKAGE OUTLINE 83B Text: NE67400 NE67483B NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz	Original	NE67400 NE67483B NE674 24-Hour NE67483B NEC 3552 NE67400 NE67483 PACKAGE OUTLINE 83B	PDF
TRANSISTOR D434 Abstract: d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313 Text: PRELIMINARY DATA SHEET GaAs MES FET NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 1.4 dB TYP. at f = 12 GHz x High associated gain Ga = 10 dB TYP. at f = 12 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm	Original	NE674 NE67400 NE67483B NE67483B] NE67400] TRANSISTOR D434 d1859 transistor D1585 NE674 d1859 D588 transistor d998 transistor transistor D467 d638 transistor transistor D313	PDF
L to Ku Band Low Noise GaAs MESFET Abstract: No abstract text available Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY	OCR Scan	NE67400 NE67483B NE674is L to Ku Band Low Noise GaAs MESFET	PDF
NE67483 Abstract: 1595S Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B NOISE FIGURE, ASSO CIATED GAIN • LOW NO ISE FIGURE: N F = 1.4 dB TYP a t f = at 1 2 G H z • HIG H A S S O C IA T E D GAIN: G a = 10 dB TYP at f = 12 GHz CQ •a u. • G ATE W ID TH : WG = 280 nm	OCR Scan	NE67400 NE67483B IS12I IS12I NE67400, NE67483B NE67400 NE67483 1595S	PDF
NE674 Abstract: NE67483 NE67483B Text: PRELIMINARY DATA SHEET_ M E C / G a A s / M E S f e t NE674 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure N F = 1.4 dBTYP. a tf= 1 2 G H z • High associated gain G a = 1 0 dBTYP, a t f = 1 2 GHz • Gate width: Wg = 280 ¿¿m	OCR Scan	NE674 NE67400 NE67483B NE67483B] NE67400] NE674 NE67483	PDF
LORB Abstract: NE2720 NE334S01 Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18	OCR Scan	NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01	PDF
NEC Ga FET marking L Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima	OCR Scan	GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a	PDF