NE8500199 Search Results

NE8500199 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE8500199		NEC	Semiconductor Selection Guide		Original	PDF
NE8500199		NEC	1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET		Original	PDF
NE8500199-AZ		NEC	FET Transistor: 1W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET		Original	PDF

NE8500199 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UM 3842 Abstract: NE8500100 NE8500199 76600 FS S12 2 23178 Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage	Original	NE8500100 NE8500199 24-Hour UM 3842 NE8500100 NE8500199 76600 FS S12 2 23178	PDF
NE8500100 Abstract: NE8500199 UM 3842 7486 gate Text: C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage • HIGH EFFICIENCY: 37% (PAE)	Original	NE8500100 NE8500199 24-Hour NE8500100 NE8500199 UM 3842 7486 gate	PDF
Nec K 872 Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199 Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.	Original	NE85001 NE8500199 NE8500100 NE8500100 Nec K 872 NE8500100-RG NE8500100-WB	PDF
2SK2396 Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××）品名 µPC8119T アプリケーション移動通信電源電圧電流周波数	Original	X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711	PDF
uPD16305 Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.	Original	PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943	PDF
nf025 Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920	Original	X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408	PDF
65004 Abstract: 850R5 NE8500199 NE6500496 NE850R599 marking 101 california 1503 Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 96/99 5.2±0.3 MARKING 1.0±0.1 YEAR INDICATOR f 2.2±0.2 4.0 MIN BOTH LEADS 4.3±0.2 MONTH INDICATOR B +.06 0.1 -.02 4.0±0.1 MONTH	Original	NE6500496 NE850R599 NE8500199 850R5 24-Hour 800-390-3ngs 65004 850R5 NE8500199 NE6500496 NE850R599 marking 101 california 1503	PDF
NE85001 Abstract: NE8500100 NE8500100-RG NE8500100-WB NE8500199 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817	PDF
uPD72002-11 Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508 Text: 品名別検索検索ツール 1. ツールバーのアイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して，検索 F をクリックしてください。	Original	PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508	PDF
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71	PDF
free transistor equivalent book 2sc Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of	Original	X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002	PDF
NEC 1357 Abstract: Nec K 872 Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.	OCR Scan	NE85001 NE8500199 NE8500100 NE8500100 NEC 1357 Nec K 872	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATASHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES_ Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB V ds	OCR Scan	NE8500100 NE8500199 NE8500100 TheNE8500199isamedium fo658 IS12I IS111 IS22I2 IS12S21I	PDF

Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES_ ABSOLUTE MAXIMUM RATINGS1 Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS • HIGH LINEAR GAIN: 9.0 dB PARAMETERS UNITS RATINGS	OCR Scan	NE8500100 NE8500199 NE8500100 NE8500199 IS12I JIS12I IS2212 IS12S21I	PDF
ne900075 Abstract: NE9000 Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27	OCR Scan	NEZ1414-2E NEZ1414-4E NEZ1414-8E NEZ1011-2E NEZ1011-8E ne900075 NE9000	PDF
NEM0899F01-30 Abstract: No abstract text available Text: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added	OCR Scan	NES1821B-30 NES1821P-50 NES2527B-30 NEZ3436-30E NEL200101-24 NEL2004F02-24 NEL2012F03-24 NEM0899F01-30	PDF