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    NEC AMPLIFIERS Search Results

    NEC AMPLIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC High Output Current Operational Amplifier Visit Rochester Electronics LLC Buy

    NEC AMPLIFIERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    smt 35rv

    Abstract: smd code marking NEC tantalum capacitor DN0J101M1S NRA225M10 smd code marking NEC capacitor MARKING CODE SMD JW DN0J 35rv transistor horizontal c 5936 104 TANTALUM capacitor nec
    Text: CAPACITORS DATA BOOK NEC Corporation 1995 PREFACE Since the development of solid electrolyte tantalum capacitor having excellent performance in 1955, NEC has been advancing research into new materials and improved production technologies, and has introduced


    Original     		PDF VIC3151, smt 35rv smd code marking NEC tantalum capacitor DN0J101M1S NRA225M10 smd code marking NEC capacitor MARKING CODE SMD JW DN0J 35rv transistor horizontal c 5936 104 TANTALUM capacitor nec

    PA101B

    Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
    Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


    Original     		PDF PA101 PA102 PA103 PA104 P10944EJ2V0AN00 PA101B PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 618 nec 882 datasheet transistor NEC 882 p NE5500179A NE5500179A-T1 VP215
    Text: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s


    Original     		PDF NE5500179A NE5500179A transistor NEC D 882 p nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 618 nec 882 datasheet transistor NEC 882 p NE5500179A-T1 VP215

    NE5510279A

    Abstract: NE5510279A-T1
    Text: DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s 0.6 µm WSi gate


    Original     		PDF NE5510279A NE5510279A NE5510279A-T1

    mixer bpsk

    Abstract: low frequency bpsk modulator ic IS136 digital phase shifter mhz uPC8158K
    Text: Application Note Indirect Quadrature Modulator IC for Digital Cellular Telephones Usage of µPC8158K Document No. P13962EJ1V0AN00 1st edition Date Published August 1999 N CP(K) 1999 Printed in Japan [MEMO] 2 Application Note P13962EJ1V0AN00 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


    Original     		PDF PC8158K P13962EJ1V0AN00 customers88-6130 mixer bpsk low frequency bpsk modulator ic IS136 digital phase shifter mhz uPC8158K

    PS8551L4

    Abstract: PS2581 PS2581A NEC PS2581 PS9451 PS9317 PS9817A-1 ps9122 PS9302 ps2805c
    Text: IC output optocoupler Transistor optocoupler May 2009 Introduction Based on all in-house technologies Bipolar, CMOS and Bi-CMOS NEC Electronics can offer a complete portfolio of optoisolation products. The long of experience of NEC Electronics in developing and manufacturing highest quality optoelectronic products is reflected in hundreds


    Original     		PDF EPMC-PU-0038-4 PS8551L4 PS2581 PS2581A NEC PS2581 PS9451 PS9317 PS9817A-1 ps9122 PS9302 ps2805c

    IS-136

    Abstract: PC8110 PDC800M GSM circuit diagram low frequency bpsk modulator ic quadrature modulator single chip bpsk modulator of lower carrier freq ic based bpsk modulator of low carrier frequency detail of half adder ic "digital phase shifter"
    Text: Application Note Direct Quadrature Modulator ICs for Digital Cellular Telephones Usage of µPC8110 and 8126 Document No. P13963EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1999 [MEMO] 2 Application Note P13963EJ2V0AN00 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.


    Original     		PDF PC8110 P13963EJ2V0AN00 liabilit88-6130 IS-136 PDC800M GSM circuit diagram low frequency bpsk modulator ic quadrature modulator single chip bpsk modulator of lower carrier freq ic based bpsk modulator of low carrier frequency detail of half adder ic "digital phase shifter"

    jUPD482234

    Abstract: ICC19
    Text: NEC ELECTRONICS INC blE D NEC NEC Electronics Inc. Description Each of the /JPD482234 fast-page and ¿/PD482235 (hyper-page) video RAMs has a random access port and a serial read/write port. The serial read/write port is connected to an internal 4096-bit data register through


    OCR Scan     		PDF b457525 GG34b04 uPD482234 /JPD482234 /PD482235 4096-bit 256Kx GG3Mb51 PPD482234, 0Q34b52 jUPD482234 ICC19

    UPC1670C

    Abstract: 574 nec UPC1670 UPC1668 UPC1668B UPC1668C UPC1669 UPC1669B UPC1669C UPC1670B
    Text: NEC/ SbE D CALIFORNIA NEC • NECC 1,427414 0002b3fl Û37 UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES HIGH ISOLATION SILICON MMIC IF AMPLIFIERS OUTLINE DIMENSIONS FEATURES • HIGH ISOLATION Units in mm OUTLINE B08 • LOW INPUT/OUTPUT RETURN LOSS 1.27±0.1


    OCR Scan     		PDF 00Q2b3fl UPC1668 UPC1669 UPC1670 UPC1668B, UPC1668C, UPC1670C 574 nec UPC1668B UPC1668C UPC1669B UPC1669C UPC1670B

    D4164

    Abstract: D4164 RAM nec D4164-15 4164 ram ram D4164 NEC 4164 D4164-15 pd4164 RAM 4164 4164-15
    Text: NEC |jlPD4164 65,536x1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 D e s c rip tio n The NEC H-PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS Random-access Memory RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both


    OCR Scan     		PDF 536x1-BIT uPD4164 536-word PD4164 xPD4164 D4164 D4164 RAM nec D4164-15 4164 ram ram D4164 NEC 4164 D4164-15 RAM 4164 4164-15

    NEC RDRAM 18

    Abstract: RDRAM RAMBUS NEC Rambus RDRAM Clock PD488170
    Text: NEC . NEC Electronics Inc. pPD488130, 488170 18-Megabit Rambus DRAM Advance Information Description The /JPD488130 and /L/PD488170 Rambus DRAMs RDRAM™ are extremely-high-speed dynamic CMOS RAMs organized as 2M words by 8 or 9 bits. Using its sense amplifiers as a cache, the RDRAM bursts up to


    OCR Scan     		PDF uPD488130 18-Megabit D488130 /JPD488170 /JPD488130 /L/PD488170 500-megabyte/second 500-megabits/second 83FM4662S NEC RDRAM 18 RDRAM RAMBUS NEC Rambus RDRAM Clock PD488170

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. Description /¿PC4081 J-FET INPUT OPERATIONAL AMPLIFIER Pin Configuration TheAiPC4081 is a single operational amplifier with a com­ bination of matched ion implanted P-channel J-FET inputs with standard bipolar transistor technology. The


    OCR Scan     		PDF PC4081 TheAiPC4081 /UPC4081 /JPC4081

    7805CT

    Abstract: 7812CT UA555TC 7808CT nec 7805a TLC82CP C4082C TL082D C393HA Nec 4558c
    Text: CROSS REFERENCE GUIDE A NEC O R IG IN AL • f u n c t i o n a l EQUIVALENT Single Operational Amplifiers Function G eneral P urpose O perational A m plifier NEC Í/PC741C FAIRCHILD NATIO NAL M O TO RO LA TEXAS ^A 741T C LM 741CN MC1741CP1 /JA741CP /iP C 7 4 lG


    OCR Scan     		PDF uPC741C uPC741G uPC811C uPC811G PC813C JPC813G4 juPC815C C616C 741CN MC1741CP1 7805CT 7812CT UA555TC 7808CT nec 7805a TLC82CP C4082C TL082D C393HA Nec 4558c

    SAS 251 B427

    Abstract: No abstract text available
    Text: NEC JHPD482444, 482445 4M Video RAM NEC Electronics Inc. Preliminary Information_ September 1994 Description The pPD482444 fast-page and pPD482445 hyper-page video RAMs have a random access port and a serial read/write port. The serial read/write port is connected


    OCR Scan     		PDF uPD482444 uPD482445 pPD482444 pPD482445 8192-bit 16-bit bM5752S pPD482444, jiPD482444, SAS 251 B427

    2SC2150

    Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
    Text: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use


    OCR Scan     		PDF bM27M14 QQQE40b NE57800 NE57807 NE57835 NE57800 NE578 2SC2150 NE57835 NE578 nec 2SC215 NE AND micro-X transistor NEC ka 42

    AS11D

    Abstract: C-41256A8 30-pin SIMM
    Text: NEC MC-41256A8 262,144 X 8-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A8 is a 262,144-word by 8-bit NMOS RAM module designed to operate from a single + 5-volt power supply. Advanced dynamic circuitry, including a


    OCR Scan     		PDF MC-41256A8 30-Pin 144-word /iPD41256 MC-41256A8 83IH-6594B AS11D C-41256A8 30-pin SIMM

    PD416C

    Abstract: H-PD416C PD416 hc375 HPD416-5 apd4162 OSKJ UPD416
    Text: NEC NEC Electronics « .¡» m Ì E b I t DYNAMIC NMOS RAM Pin Identification Description □ □ □ □ □ 16,384-word x1-bit organization High memory density: 16-pin ceramic or plastic packages Multiplexed address inputs Standard power supplies: +12V, -5V , +5V


    OCR Scan     		PDF uPD416 384-word PD416 16-pin 103/tfiC H-PD416C PD416D 416DS-REV4-1-84-CAT-L PD416C hc375 HPD416-5 apd4162 OSKJ

    PD488170

    Abstract: NEC RDRAM 18 NEC rambus dram NEC Rambus RDRAM Clock 2047K
    Text: NEC pPD488130, 488170 18-Megabit Rambus DRAM NEC Electronics Inc. Advance Information O cto b er 1992 Description Ordering Information The /JPD488130 and jl/PD488170 Rambus DRAMs RDRAM™ are extremely-high-speed dynamic CMOS RAMs organized as 2M words by 8 or 9 bits. Using its


    OCR Scan     		PDF uPD488130 uPD488170 500-megabyte/second 500-megabits/second 0aStiT51 JIPD488130, 32-Pin b457S2S PD488170 NEC RDRAM 18 NEC rambus dram NEC Rambus RDRAM Clock 2047K

    2SC1600

    Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
    Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is


    OCR Scan     		PDF b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164

    gg3m

    Abstract: 12DU8
    Text: NEC X NEC Electronics Inc. f#PD42116x = 420, 820, 920, 162, 182 16-Megabit Synchronous Dynamic CMOS RAM Advance Information N E C ELECTRONICS T '- y ó INC blE Description ThepPD42116x is a synchronous DRAM (SDRAM) using a single 3.3-volt power supply and with all input signals


    OCR Scan     		PDF uPD42116x 16-Megabit ThepPD42116x /PD42116420 /L/PD42116820 JJPD42116920me b427525 pPD42116x b42752S D034b71 gg3m 12DU8

    Untitled

    Abstract: No abstract text available
    Text: NEC . JJPD482234, 482235 Video RAM NEC Electronics Inc. Description Each of the ¿/PD482234 fast-page and ¿/PD482235 (hyper-page) video RAMs has a random access port and a serial read/write port. The serial read/write port is connected to an internal 4096-bit data register through


    OCR Scan     		PDF JJPD482234, /PD482234 /PD482235 4096-bit a512x The256Kx ffPD482234, fiPD482234, JIPD482234,

    Untitled

    Abstract: No abstract text available
    Text: DEC 2 1992 NEC NEC Electronics Inc. JJPD488130, 488170 18-M egabit Rambus DRAM Advance Information October 1992 Description Ordering Information The /L/PD488130 and juPD488170 Rambus DRAMs RDRAM™ are extremely-high-speed dynamic CMOS RAMs organized as 2M words by 8 or 9 bits. Using its


    OCR Scan     		PDF JJPD488130, /L/PD488130 juPD488170 500-megabyte/second 32-pin PD488170 500-megabitr