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    2SC3660A

    Abstract: 2SC3660
    Text: CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR NEM060C69-28 NEM080C69-28 NEM080C69-28 OUTPUT POWER AND COLLECTOR EFFICIENCY vs. FREQUENCY FEATURES HIGH POWER AND HIGH GAIN: Vcc = 28 V.CIass AB NEM080C69-28: PO = 49.6 dBm, GP = 5.6 dB TYP NEM060C69-28: PO = 50.2 dBm, GP = 8.2 dB (TYP)


    OCR Scan     		PDF NEM080C69-28: NEM060C69-28: NEM060C69-28 NEM080C69-28 NEM080C69-28 L4E75E5 0Qt57fib NEM060C69-28, 2SC3660A 2SC3660

    2SC3660A

    Abstract: nec 2sc3660A diode gp 426 2SC3660 NEM060C69-28 NEM080C69-28 NEM080CC9-28 NEM080CM-28 4a7m1 J11J
    Text: NEC/ CALIFORNIA SbE D b427414 0002550 NEC CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR 7 44 « N E C C NEM060C69-28 NEM080C69-28 OUTLINE DIMENSIONS FEATURES Units in mm O U TLIN E 69 • HIGH P O W E R A N D H IGH GAIN: Vcc = 28 V, C lass A B N EM 080C69-28: Po = 49.6 dBm, G p = 5.6 dB (TYP)


    OCR Scan     		PDF b427414 NEM060C69-28 NEM080C69-28 NEM080C69-28: NEM060C69-28: NEM080CM-28 4a7M14 NEM060C69-28, 2SC3660A nec 2sc3660A diode gp 426 2SC3660 NEM080CC9-28 4a7m1 J11J

    2SC3660

    Abstract: 2SC3660A NEM060
    Text: CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR N EM080C69-28 OUTPUT POWER AND COLLECTOR EFFICIENC Y vs. F REQUENCY FEATURES HIGH POWER AND HIGH GAIN: Vcc = 28 V.CIass AB NEM080C69-28: PO = 49.6 dBm, GP = 5.6 dB TYP NEM060C69-28: PO = 50.2 dBm, GP = 8.2 dB (TYP)


    OCR Scan     		PDF NEM080C69-28: NEM060C69-28: NEM060C69-28 NEM080C69-28 EM080C69-28 NEM080C69-28 NEM060C69-28, 2SC3660 2SC3660A NEM060

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    NEL1320

    Abstract: No abstract text available
    Text: Power Silicon Bipolar Selection Guide UHF DEVICES: 500 MHz to 1 GHz Part Mambar Pact*«« Style Fn^MNf Range BHl ta * lt Valtoge W rot cun « O f n iH (dBm) Poiit (W> Pour Gain (dBm) Efficiency (%) -fû t ftgt^ vw M mmI H M l M al " “ dWW. H a nd H e ld A p p lic a tio n s : 7 V o lt S u p p ly, C la s s C


    OCR Scan     		PDF NEM090701-07 NEM090301 NE090101- NE081091-12 NE081090-12 NE080491-12 NE080490-12 NE080190-12 NE080191-12 NEM0M081B-28 NEL1320

    NE050290-07

    Abstract: ne050391-12 DDD2224 NE050220-07 NE050291-07 NE050490-07 NE050491-07 NE050690-07 NE050691-07 NEM054029-12
    Text: E C/ CALIFORNIA 47E » • bM27414 DDDE224 blT « N E C C UHF DEVICES: 450 MHz TO 700 MHz PART NUMBER PACKAGE STYLE FREQUENCY SUPPLY CLASS RANGE OF VOLT. GHz OPER. (V) TYP. TYP. P out P out (dBm) (W) 38.6 7.2 8.6 70.0 .500 NO 38.5 7.1 4.0 80.0 .500 NO 38.5


    OCR Scan     		PDF bM27414 DDD2224 NE050725-10 NE050691-07 NE050690-07 NE050490-07 NE050491-07 NE050291-07 NE050290-07 NE052025-28 ne050391-12 NE050220-07 NEM054029-12