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    2SC3538

    Abstract: 2SC3539 2SC3537 B-28 NEM0900 NEM092081B-28 NEM094081B-28 NEM096081B-28 B2-8
    Text: E C/ CALIFORNIA SbE D • b45?414 QOQSSbS e]fl4 INECC " ' v i s NEM092081B-28 NEM094081B-28 NEM096081B-28 CLASS C, 900 MHz, 28 VOLT POWER TRANSISTOR FEATURES r o OUTLINE DIMENSIONS Units in mm • HIGH P O W E R OUTLINE 81B • H IG H GAIN • TITAN IU M /PLA TIN U M /G O LD M ETALLIZATIO N


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    NEM092081B-28 NEM094081B-28 NEM096081B-28 NEM0900 NEM092081B-28, NEM094081B-28, NEM092081 2SC3538 2SC3539 2SC3537 B-28 B2-8 PDF

    OB2540

    Abstract: No abstract text available
    Text: CLASS C, 900 MHz _ A N E M 0 9 4 28 VOLT POWER TRANSISTOR _ . _ n e m o 92 o s ib -28 0 8 1 B - 2 8 n e m o 96o s ib -28 NEM096081 B-28 OUTPUT POWER AND EFFICIENCY V » . INPUT POWER FEATURES • HIGH POWER • HIGH GAIN • TITANIUM/PLATINUM/GOLD METALLIZATION


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    NEM096081 NEM0900 NEM092081B-28 NEM094081 03-j1 87-j0 TEA-561 NEM096081B-28 OB2540 PDF

    transistor kt 925

    Abstract: 2SC3537 NEM092
    Text: CLASS C, 900 MHz _ ’ 28 VOLT POWER TRANSISTOR NEM094081B-28 n e m o 96o s ib -28 NEM096081B-28 OUTPUT POWER AND EFFICIENCY vs. INPUT POWER FEATURES • HIGH POWER • HIGH GAIN • TITANIUM/PLATINUM/GOLD METALLIZATION FOR HIGH RELIABILITY . o p* 3 • SUPERIOR RF PERFORMANCE


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    NEM094081B-28 NEM096081B-28 03-j1 NEM092081 NEM094081 NEM096081 TEA-561 b427SBS transistor kt 925 2SC3537 NEM092 PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    NEL1320

    Abstract: No abstract text available
    Text: Power Silicon Bipolar Selection Guide UHF DEVICES: 500 MHz to 1 GHz Part Mambar Pact*«« Style Fn^MNf Range BHl ta * lt Valtoge W rot cun « O f n iH (dBm) Poiit (W> Pour Gain (dBm) Efficiency (%) -fû t ftgt^ vw M mmI H M l M al " “ dWW. H a nd H e ld A p p lic a tio n s : 7 V o lt S u p p ly, C la s s C


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    NEM090701-07 NEM090301 NE090101- NE081091-12 NE081090-12 NE080491-12 NE080490-12 NE080190-12 NE080191-12 NEM0M081B-28 NEL1320 PDF