Safety Modules

Abstract: NES13D marking s34 NES02D EN1088 S11-S12 b24s en 60204-1
Contextual Info: Safety Modules Emergency Stop and Safety Gate Types NES02D, NES13D • • • • • • • • • • Screw, fixed Safety Category 4 according to EN 954-1 Category 0 Emergency Stop EN 60204-1 2 x 6 A NO safety outputs (NES02D) 3 x 6 A NO safety outputs and 1 x 6 A NC auxiliary output (NES13D)

NES1085

Abstract: NSG2591 NSG259J NES1
Contextual Info: NES1085 ^1 P *NEW ENGLAND SEMICONDUCTOR LOW DROPOUT VOLTAGE REGULATORS • • • • • • IV Dropout, 1.5V @ Max C urrent 0.01% Load Regulation 0.015% Line Regulation 1% Reference Voltage H ermetic TO-254Z Pak O utput C u rren t 3.0A 3 TERM IN AL PO SITIV E

8712 RESISTOR

Abstract: NES1823M-180
Contextual Info: DATA SHEET GaAs FET NES1823M-180 180 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 180 W of output power CW with high linear gain, high

Contextual Info: Back to FETs 0 /V E F ^ IP NES130/5 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc - 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS

MESFET S parameter data sheet

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear

IEC-1000-4-3

Abstract: NES240-24 NES240-48 NES60-24 neS-240-48 NES120 NES120-24 NES240 IEC1000-4-3
Contextual Info: NES SERIES DIN RAIL MOUNTED SWITCHED MODE 60-240W SINGLE OUTPUT F E AT U R E S • Universal input ■ PFC as standard on NES 120, 240 ■ Low profile ■ Output good LED ■ Convection cooled DIN ELECTRICAL SPECIFICATION Model No. Max Power NES60-24 NES120-24

NES1823S-90

Contextual Info: DATA SHEET GaAs FET NES1823S-90 90 W L, S-BAND SINGLE-END POWER GaAs FET DESCRIPTION The NES1823S-90 is a 90 W single-end type GaAs FET designed for high power transmitter applications for IMT2000 base station systems. It is capable of delivering 90 W of output power CW with high linear gain, high efficiency

nec 0882

Abstract: transistor NEC D 882 p nec d 882 p datasheet nec d 882 p NES1823P-45 1658 NEC
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-45 45 W L, S-BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power CW with high

gaas fet T79

Abstract: NES1821B-30
Contextual Info: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE

NES1417B-30

Abstract: nec 1441
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1.7GHz 24±0.3

AN1032

Abstract: NES1823P-70
Contextual Info: PRELIMINARY DATA SHEET 70W L-S BAND TWIN POWER GaAs MESFET FEATURES NES1823P-70 OUTLINE DIMENSIONS Units in mm • • HIGH OUTPUT POWER: 70 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP • HIGH LINEAR GAIN: 11 dB TYP at 2.2 GHz PACKAGE OUTLINE T-86 45°

NES1821P-50

Abstract: D2010
Contextual Info: 50W L-BAND PUSH-PULL POWER GaAs MESFET FEATURES • • NES1821P-50 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 50 W TYP HIGH DRAIN EFFICIENCY: 52 % TYP @ VDS = 10 V, ID = 2 A, f = 1.96 GHz HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION

K 1358 fet transistor

Abstract: AN1032 NES1720P-140
Contextual Info: PRELIMINARY DATA SHEET 140 W L-BAND TWIN POWER GaAs MESFET NES1720P-140 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 140 W TYP HIGH LINEAR GAIN: 11 dB TYP HIGH EFFICIENCY: 42% TYP USABLE IN BALANCED OR PUSH-PULL CONFIGURATION.

NES1823M-45

Contextual Info: PRELIMINARY DATA SHEET GaAs FET NES1823M-45 45 W L, S-BAND PUSH-PULL POWER GaAs FET DESCRIPTION The NES1823M-45 is a 45 W push-pull type GaAs FET designed for high power transmitter applications for IMT2000, PCS, and PDC base station systems. It is capable of delivering 45 W of output power CW with high linear

imt 901

Abstract: nec k 813 NES1823P-30
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NES1823P-30 30 W L-S BAND PUSH-PULL POWER GaAs MES FET DESCRIPTION The NES1823P-30 is a 30 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS and IMT 2000 base station systems. It is capable of delivering 30 watts of output power CW with high linear

NES137

Contextual Info: T im es ? NES137 3 TERMINAL NEGATIVE ADJUSTABLE LINEAR VOLTAGE REGULATORS Output Voltage Adjustable Form -1.2V to -37V 1.5A Output Current Guaranteed -55 C to +150 C Pin 1 Line Regulation Typically 0.01% /V Pin 2 Load Regulation Typically 0.3% Pin 3 Output Short Circuit Protected

Contextual Info: Back to FETs 0 /V E F ^ IP NES150/61 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREMENT • DYNAMIC d v /d t RATING A B SO L U T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted)

GaAs MESFET

Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964
Contextual Info: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain

Contextual Info: DATA SHEET_ NEC N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAsMESFETdesigned forhigh power transmitter applications for PCS, DCS and PHS base station systems. It is capableof delivering 50 wattsof output power CW

POUT36

Abstract: NES1821B-30 p1209
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz 24±0.3

Contextual Info: PRELIMINARY DATA SHEET 100W L-BAND TWIN POWER GaAs MESFET NES1823P-100 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 1 0 0 W T Y P • HIGH LINEAR GAIN: 11 d B T Y P • HIGH DRAIN EFFICIENCY: 50 % TYP @ V ds = 10 V, I d = 6 A, f = 2.2 GHz

iosq 050

Abstract: NES1417-20B n channel fet k 1118 SC 1482
Contextual Info: L-BAND POWER GaAs MESFET NES1417-20B NOT RECOMMENDED FOR NEW DESIGN PRELIMINARY FEATURES_ • HIGH P out 20 W 43.0 dBm Typical Pi< • HIGH EFFICIENCY 44% Power Added Efficiency • H GH LINEAR GAIN 14 dB Typical Linear Gain • LOW IMD -40 dBc @ 32 dBm (SCL)

ES1821

Abstract: M 0737
Contextual Info: PRELIMINARY DATA SHEET 30 W L-BAND NES1821 B-30 POWER GaAs MESFET FEATURES_ OUTLINE DIMENSIONS Units in mm • C L A S S A OR AB OPERATION P A C K A G E OUTLIN E T-79 • HIGH OUTPUT POW ER • HIGH GAIN • HIGH POW ER ADDED EFFICIENCY • PARTIALLY M ATCHED

610-150

Abstract: nec d 1590 NES1821P-50
Contextual Info: DATA SHEET N-CHANNEL GaAs MES FET NES1821P-50 50 W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-50 is a 50 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It is capable of delivering 50 watts of output power CW with high linear