NI123 Search Results

NI123 Price and Stock

Filter by Manufacturer


Anytek Technology Corporation Ltd NI1230500000G TERM BLK 12POS 45DEG 3.81MM PCB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NI1230500000G	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $2.85053	Buy Now
Onlinecomponents.com	NI1230500000G					1 - 10 - 100 - 1000 $3.91 10000 $2.69	Buy Now
Interstate Connecting Components	NI1230500000G					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Amphenol Corporation NI12305000J0G NI12305000J0G-381 TB SPRING CLAMP 45D - Bulk (Alt: NI1230500000G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NI12305000J0G	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $2.53507	Buy Now
Amphenol Corporation NI1230500000G Pluggable Terminal Blocks TB SPRING CLAMP 45D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NI1230500000G					1 - 10 - 100 - 1000 - 10000 $2.85	Get Quote
Avnet Abacus	NI1230500000G			16 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Anytek Technology Corporation Ltd NI12305000J0G Ni 3.81 12P Green ; Contact With Bright Tin-Plated Wire Guard With Stainless Steel Nl66 @ Mark \|Amphenol Anytek NI12305000J0G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NI12305000J0G	Bulk			2,000	1 - 10 - 100 - 1000 $3.07 10000 $3.07	Buy Now
Interstate Connecting Components	NI12305000J0G					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Elesa+Ganter GN 2342-NI-12-35-B-1 Assembly pin; Ø: 12mm; L: 35mm; without cross hole,with washer
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	GN 2342-NI-12-35-B-1				1	1 $12.16 10 $9.19 100 $9.19 1000 $9.19 10000 $9.19	Get Quote

Find more NI123 price and stock on Findchips.com

NI123 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NI1230500000G		Amphenol Anytek	Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 12POS 45DEG 3.81MM PCB		Original	PDF

NI123 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NI-1230S Abstract: No abstract text available Text: MRF6VP41KHSR7 Information General information Package information Environmental and Compliance information Manufacturing and Qualification information Ordering information General Information Parameter Value Part Number MRF6VP41KHSR7 Description VHV6 450MHZ1000W NI1230S	Original	MRF6VP41KHSR7 450MHZ1000W NI1230S 641KHS NI-1230S EAR99	PDF
mrfe6vp5600hs Abstract: MRFE6VP5600H Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H	PDF
ATC200B103KT50X Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X	PDF
G2225X7R225KT3AB Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.	Original	MRF6VP2600H MRF6VP2600HR6 G2225X7R225KT3AB MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 5,12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110	Original	MRF6P21190HR6	PDF
ATC600F0R1BT250XT Abstract: No abstract text available Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	MRF8P18265H MRF8P18265HR6 MRF8P18265HSR6 ATC600F0R1BT250XT	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with	Original	MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6	PDF
TRANSISTOR J477 Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17 Text: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT18HW355S AFT18HW355SR6 1805-he AFT18HW355S TRANSISTOR J477 TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17	PDF
NI-1230-4H Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS	PDF
transistor j241 Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448 Text: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of	Original	AFT18P350--4S2L AFT18P350-4S2LR6 DataAFT18P350--4S2L 4/2013Semiconductor, transistor j241 aft18P350-4 x3c19p1 j485 transistor j449 j448	PDF
T491C105K0 Abstract: No abstract text available Text: Document Number: MRF6P21190HR6 Rev. 5,12/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF6P21190HR6 MRF6P21190HR6 T491C105K0	PDF
ATC100B390JT500XT Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 92ficers, MRF8P9300H ATC100B390JT500XT ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X	PDF
MRF5P21180HR6 Abstract: MRF5P21180 AN1955 CDR33BX104AKYS Text: Freescale Semiconductor Technical Data Document Number: MRF5P21180HR6 Rev. 3, 10/2008 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF5P21180HR6 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.	Original	MRF5P21180HR6 MRF5P21180HR6 MRF5P21180 AN1955 CDR33BX104AKYS	PDF

C3225X7R2A225KT Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices	Original	MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0	PDF
MRF6VP3450H Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT Text: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with	Original	MRF6VP3450H MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450H MRF6VP3450H 470-860 DVB-T Schematic MRF6Vp3450 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT	PDF
250GX-0300-55-22 Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed	Original	MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 Arlon AN1955 MRF6VP121KHSR6	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
MRF9180 Abstract: MRF9180R6 Text: Document Number: MRF9180 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9180 MRF9180R6 IS-95 MRF9180 MRF9180R6	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to	Original	MMRF1006H MMRF1006HR5 MMRF1006HSR5 MMRF1006HR5	PDF
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l	PDF
C4532X7RIH685K Abstract: ATC600F1R0BT250XT AN1955 J373 Text: Document Number: MRF8S18260H Rev. 0, 9/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with	Original	MRF8S18260H MRF8S18260HR6 MRF8S18260HSR6 MRF8S18260HR6 C4532X7RIH685K ATC600F1R0BT250XT AN1955 J373	PDF
DB3-5D Abstract: ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR Text: Freescale Semiconductor Technical Data Document Number: MRF8S19260H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multi - carrier base station applications with	Original	MRF8S19260H MRF8S19260HR6 MRF8S19260HSR6 MRF8S19260HR6 DB3-5D ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices	Original	MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5	PDF

Privacy Settings

NI123 Search Results

NI123 Price and Stock

Anytek Technology Corporation Ltd NI1230500000G

Amphenol Corporation NI12305000J0G

Amphenol Corporation NI1230500000G

Anytek Technology Corporation Ltd NI12305000J0G

Elesa+Ganter GN 2342-NI-12-35-B-1

NI123 Datasheets (1)

NI123 Datasheets Context Search

NI-1230S

mrfe6vp5600hs

ATC200B103KT50X

G2225X7R225KT3AB

Untitled

Untitled

ATC600F0R1BT250XT

Untitled

TRANSISTOR J477

NI-1230-4H

transistor j241

T491C105K0

ATC100B390JT500XT

MRF5P21180HR6

C3225X7R2A225KT

MRF6VP3450H

250GX-0300-55-22

schematic diagram atx Power supply 500w

MRF9180

Untitled

Arduino Mega2560

C4532X7RIH685K

DB3-5D

Untitled