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    NIPPON CHEMI CON CAPACITOR DATA CODE Search Results

    NIPPON CHEMI CON CAPACITOR DATA CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    NIPPON CHEMI CON CAPACITOR DATA CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J698

    Abstract: NIPPON CAPACITORS Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6P9220HR3 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6P9220H MRFE6P9220HR3 J698 NIPPON CAPACITORS Chemi-Con DATE CODES A114 A115 AN1955 C101 JESD22 MRFE6P9220HR3 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P9220H Rev. 0, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRFE6P9220H MRFE6P9220HR3

    bck-28

    Abstract: TRANSFORMER bck zd103 lx6503 SWITCHING TRANSISTOR C144 PC101 optocoupler d313 TRANSISTOR equivalent DIODE zd101 sfh817a transistor D313 pin configuration
    Text: TND360/D Rev. 0, February 2009 Up to 180 W High Voltage LCD TV Power and Integrated Inverter Supply 12 February 2009 2009 ON Semiconductor Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes all risk associated with the use


    Original     		PDF TND360/D SM02B-BHSS-1-TB IC300 LX6503-IDW 220pF PIT125050-3551 PBT-07087-1322G ON-MICRO-LIPS-32" bck-28 TRANSFORMER bck zd103 lx6503 SWITCHING TRANSISTOR C144 PC101 optocoupler d313 TRANSISTOR equivalent DIODE zd101 sfh817a transistor D313 pin configuration

    j633

    Abstract: Chemi-Con DATE CODES 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 w1760
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 j633 Chemi-Con DATE CODES 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 w1760

    nippon capacitors

    Abstract: Nippon chemi
    Text: Document Number: MRF6P9220H Rev. 3, 8/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220H MRF6P9220HR3 MRF6P9220H nippon capacitors Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 Nippon capacitors Nippon chemi

    ATC100B102JP50XT

    Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi
    Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 20ers, MRF6P9220H ATC100B102JP50XT nippon capacitors JESD22 A114 AN1955 ATC100B101JP500XT Nippon chemi

    Chemi-Con DATE CODES

    Abstract: chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 MRF6P9220HR3 Nippon chemi
    Text: Document Number: MRF6P9220H Rev. 3.1, 12/2008 Freescale Semiconductor Technical Data MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6P9220H MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 Chemi-Con DATE CODES chemi-con date code MRFE6P9220HR3 NIPPON CAPACITORS ATC100B101JT500XT A114 AN1955 JESD22 Nippon chemi

    j1303

    Abstract: CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 j2479
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 0, 9/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 Designed for N- CDMA base station applications with frequencies from 1805


    Original     		PDF MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 j1303 CRCW12061001F100 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 j2479

    NIPPON CAPACITORS

    Abstract: A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H - 2 Rev. 3, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.


    Original     		PDF MRF5S9150H MRF5S9150HSR3 150icers, MRF5S9150H-2 NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HSR3 d 5287 transistor Nippon chemi

    transistor c 5287

    Abstract: NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HR3 d 5287 transistor
    Text: Document Number: MRF5S9150H - 1 Rev. 2, 3/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9150HR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.


    Original     		PDF MRF5S9150H MRF5S9150HR3 MRF5S9150H-1 transistor c 5287 NIPPON CAPACITORS A114 A115 AN1955 ATC100B470JT500XT C101 JESD22 MRF5S9150HR3 d 5287 transistor

    J698

    Abstract: NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P9220HR3 Nippon chemi
    Text: Document Number: MRF6P9220H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6P9220H MRF6P9220HR3 J698 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P9220HR3 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6P9220H MRF6P9220HR3

    mosfet j133

    Abstract: MRFE6S9045NR1 J133 mosfet ALT1110 A113 A114 A115 Nippon chemi ATC100B470JT500XT C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9045N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this


    Original     		PDF MRFE6S9045N MRFE6S9045NR1 mosfet j133 MRFE6S9045NR1 J133 mosfet ALT1110 A113 A114 A115 Nippon chemi ATC100B470JT500XT C101

    MRF6S19120H

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 MRF6S19120HR3 MRF6S19120HSR3 Designed for N - CDMA base station applications with frequencies from 1930


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 MRF6S19120HR3 MRF6S19120H

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 MRF6S19140H Nippon capacitors Nippon chemi

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 3, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 MRF6S19140H Nippon capacitors Nippon chemi

    MRFE6S9045

    Abstract: PCN12 A114 A115 C101 JESD22 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRFE6S9045NR1
    Text: Freescale Semiconductor Technical Data MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9045NR1 MRF6S9045NBR1 N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF6S9045NR1 MRFE6S9045NR1. PCN12895 MRF6S9045NBR1 MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045N MRFE6S9045 PCN12 A114 A115 C101 JESD22 MRF6S9045N MRFE6S9045NR1

    T491X106K035AT

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19120HR3 MRF6S19120HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3 MRF6S19120HR3 T491X106K035AT A114 A115 AN1955 C101 JESD22 MRF6S19120HSR3 Nippon capacitors Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 4, 8/2008 MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors MRF6S9045NR1


    Original     		PDF MRF6S9045N MRF6S9045NR1 MRFE6S9045NR1. PCN12895 MRF6S9045NBR1 MRF6S9045NR1 MRF6S9045NBR1

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HSR3 Nippon capacitors Nippon chemi

    MRFE6S9045NR1

    Abstract: ATC 221 Chemi-Con DATE CODES Nippon Chemi-Con LABEL A114 A115 C101 JESD22 MRF6S9045N MRF6S9045NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 4, 8/2008 MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION


    Original     		PDF MRF6S9045N MRF6S9045NR1 MRFE6S9045NR1. PCN12895 MRF6S9045NBR1 MRF6S9045NBR1 MRFE6S9045NR1 ATC 221 Chemi-Con DATE CODES Nippon Chemi-Con LABEL A114 A115 C101 JESD22 MRF6S9045N

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 MRF6S9125NR1 515D107M050BB6A
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 515D107M050BB6A