architecture of 80486 microprocessor
Abstract: Phoenix BIOS manual 80486 microprocessor features microprocessor 80486 internal architecture weitek DCE376 KJ99 lj96 80486 microprocessor pixelworks controller
Text: PREFACE Thank you for your choice of a Mylex 486/EISA System Board product. With proper installation and care, your Mylex System Board will operate for years without any service requirement. This manual will guide you in the installation process. The information
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Original
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486/EISA
33MHz
25MHz
51ooO12-00
architecture of 80486 microprocessor
Phoenix BIOS manual
80486 microprocessor features
microprocessor 80486 internal architecture
weitek
DCE376
KJ99
lj96
80486 microprocessor
pixelworks controller
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transistor w7
Abstract: PJ99
Text: AL L E GRO MI C ROS Y S TE MS I NC ^3 D • 0 5 D4 3 3 Ô 00D3775 S ■ ALGR T -9 1 -0 1 PROCESS PJ99 Process PJ99 P-Channel Junction Field-Effect Transistor Process PJ99 is a P-channel junction field-effect transistor designed as a complement to the NJ99
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00D3775
05D433Ô
0Q0377b
KftA-14
transistor w7
PJ99
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Untitled
Abstract: No abstract text available
Text: ALL EGR O MICROSYSTEMS INC R3 D • 0 5 0 4 3 3 6 0 0 0 3 7 b 7 L ■ ALGR T-91-01 P R O C E S S NJ99 Process NJ99 N-Channel Junction Field-Effect Transistor Process NJ99 is an N-channel junction field-effect transistor designed for use as either a general-purpose, high-gain amplifier or as a switch. Selected
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T-91-01
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEMICOND GROUP 85 14 01 9 SPRAGUE. ^3 D • flS13A5Q Q003b i o T " | i S E M I C O N D S / ICS 9 3 D 0 3 6 1 0 3> 7 ^-Z.f-Z.S SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh V(BR]GSS
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OCR Scan
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flS13A5Q
Q003b
TMPF4858A
TMPF4859
TMPF4859A
7MPF4860
TMPF4860A
TMPF4861
TMPF4861A
TMPF4867
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Untitled
Abstract: No abstract text available
Text: SPRAGUE/SEÎ1IC0ND GROUP 8 5 1 4 0 1 9 SP RA G UE . T3 D • SEMICONDS/ IC S 0513050 QD03bll =1 ■ 93D 03611 $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S o H Limits Igss V(flR]GSS Conditions
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OCR Scan
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QD03bll
TMPF5951
TMPF5952
TMPF5953
TMPF6451
TMPF6452
TMPF6453
TMPF6454
TMPFBC264A
TMPFBC264B
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Untitled
Abstract: No abstract text available
Text: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj
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OCR Scan
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2N5556
2N5557
2N5558
2N6451
2N6452
2N6453
2N6454
NF5101
NF5102
NF5103
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NJ32
Abstract: THJ5486 THJ5459 THJ5484 THJ5485 THJ55456 THJ55466 THJ55476
Text: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 » • D50433Ô SE M IC O N D S/IC S D D G 3 S 6 1 3 ■ ALÛR 93D 0 3 5 8 1 3 > 7"-2 ?*2.S JUNCTION FIELD-EFFECT TRANSISTO R CH IPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh
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OCR Scan
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D5D433fi
DQQ3S61
THJ5459
THJ5484
THJ5485
THJ6449
THJ5450
THJ6451
NJ132L
THJ6452
NJ32
THJ5486
THJ55456
THJ55466
THJ55476
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tp5950
Abstract: No abstract text available
Text: SPR AGU E/ SE MIC ON D GROUP 8 5 1 4 0 1 9 SPRAGUE, T3 D • 0513350 00Q3b01 S E M I C O N D S / ICS h M 93D 03601 J> 7 ^ ^ -Z .S - PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits
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OCR Scan
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00Q3b01
TP4858A
TP4659
TP4859A
TP4860
TP4860A
TP4861
TP4861A
TP4867
TP4868
tp5950
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THJU401
Abstract: THJJ300B
Text: " S P R AG UE /S EM IC ON D GROUP 13 D • 6513350 0003562 b ■ 93D 03582 TTF-ZV-ZS 8 5 1 4 0 1 9 SPRAGUE . S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al Tfl = 25°C VGS ofl V(BR]GSS Limits Igss
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OCR Scan
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THJBC264A
THJBC264B
THJBC264C
THJBC264D
THJBF244A
THJBF244B
THJBF244C
THJBF246A
THJBF246B
THJBF246C
THJU401
THJJ300B
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Untitled
Abstract: No abstract text available
Text: AL L E GRO MI C ROS Y S T E MS 8514019 SPRA G U E. I NC T3 D • 0 5 D4 3 3 Ö S E M IC O N D S / I C S GDD3bü3 93D 1 ■ ALGR 0 3 6 0 3 J> PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGs on V(BR)GSS
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OCR Scan
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MPF110
MPF111
MPF112
MPF820
TPBC264A
TPBC264B
TPBC264C
TPBC264D
TPJ105
TPJ107
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Untitled
Abstract: No abstract text available
Text: AL L E G R O M I C R O S Y S T E M S 8 5 1 4 0 1 9 SPRA GU E. INC T3 D • 0SGM33fl D D O B b l l S E M I C O N D S / ICS ö ■ ALGR 93 D 03611 $ 7 = Z?-ZS SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs E LE C T R IC A L CH ARACTERISTICS at Tfl = 25°C
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OCR Scan
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0SGM33fl
TMPF5951
TMPF5952
TMPF5953
TMPF6451
TMPF6452
TMPF6453
TMPF6454
TMPFBC264A
TMPFBC264B
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MPF103
Abstract: J300B J112A MPF104 MPF105 BF244A BF246A NJ32 TP5951 TP5952
Text: PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S[0 1 VtBHJGSS Conditions Limits Ig s s Oh loss Cnss* < w rDS Min. (V) Max. (V) Vos (V) lo (nA) Min. (mA) Max. (mA) G1vos (V) Min. (mS) Max. (mS) -1 5
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OCR Scan
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TP5951
TP5952
TP5953
TP6449
MPF103
J300B
J112A
MPF104
MPF105
BF244A
BF246A
NJ32
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2N5485
Abstract: TP5668 NJ132 NJ16 TP4858A TP4859 TP4859A TP4860 TP4860A TP4861
Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE, T3 D • 0513350 00Q3b01 SE MI C ON DS /ICS 93D 03601 h M J> 7 ^ ^ -Z .S PLAST1C-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C VgS oH V(BRJGSS Limits Igss Min. (V) IG
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OCR Scan
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DD03b01
TP4858A
NJ132
TP4859
TP4859A
O-226AA/STYLES
2N5485
TP5668
NJ132
NJ16
TP4860
TP4860A
TP4861
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BC2640
Abstract: smp6453
Text: IN T E R F E T CORP »F|Ma5bfiflfl o o o o iza i SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS a tT A = 2S°C . ^BHICSS - - Device Type Min. V fti le ItiA) Max. (nA) SMP 5951 SMP 5952 SMP 5953 SMP 6451 SMP 6452
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OCR Scan
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BC264A
BC264B
6C264C
BC2640
BF244A
BF244B
BF244C
BF246A
BF246B
BF246C
smp6453
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TMPFBF244C
Abstract: tmpfj308 NJ32 TMPF5951 TMPF5952 TMPF5953 TMPF6451 TMPF6452 TMPF6453 TMPF6454
Text: SPRAGUE/SEÎ1IC0ND 8514019 SPRAGUE. GROUP T3 D • SEMICONDS/ ICS 0513050 93D QD03bll 03611 =1 ■ $ SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH V(BR]GSS Limits Igss Device Type Min. (V)
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OCR Scan
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0D03hll
TMPF5951
TMPF5952
TMPF5953
TMPFBF244C
tmpfj308
NJ32
TMPF6451
TMPF6452
TMPF6453
TMPF6454
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PDF
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AUO-PL321.15
Abstract: itt+zx+15 DIODE+C06+15 murata+filter+cfj455k+15 B456+F+15 zener+phc+15
Text: ALL E GR O M I C R O S Y S T E M S Ö514019 SPRAGUE. INC ^3 D • 05D433S SEMICONDS / ICS 0 0 Q 3 h l 0 b ■ ALGR 93D 03610 ]> SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs E LE C T R IC A L CH ARACTERISTICS at TA = 25°C VgS OH Limils
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OCR Scan
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05D433S
TMPF4858A
TMPF4859
TMPF4859A
TMPF4860
TMPF4860A
TMPF4861
TMPF4861A
TMPF4867
TMPF4868
AUO-PL321.15
itt+zx+15
DIODE+C06+15
murata+filter+cfj455k+15
B456+F+15
zener+phc+15
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Untitled
Abstract: No abstract text available
Text: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SP RA GU E. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 9 3 D 03 6 0 3 T J> T ï 'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS
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OCR Scan
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TPBC264B
TPBC264C
TPBC264D
TPJ105
TPJ106
-226AA/STYLES
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PDF
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tp5950
Abstract: No abstract text available
Text: ALL E GR O MICROSYSTEMS 8514019 INC =13 SPRAGUE. D • GS0M33Ö G G O B b O l S ■ ALGR SEM ICO NDS/ IC S 93D 03601 J> P LA ST IC -C A SE JUNCTION FIELD-EFFECT T RA N SISTO R S N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oH V(BR1GSS Limits
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OCR Scan
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GS0M33Ö
TP4858A
TP4859
TP4859A
TP4860
TP4860A
TP4861
TP4861A
TP4867
TP4868
tp5950
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PDF
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Untitled
Abstract: No abstract text available
Text: A L LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 S P R A GU E. INC ^3 D • 0 S 0 M 3 3 Ô 0 0 0 3 S Ö 2 5 ■ AL 6R 93 D 0 3 5 8 2 'b'T-Z.^ZS S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C
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OCR Scan
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THJBC264A
THJBC264B
THJBC264C
THJBC264D
THJBF244A
THJBF244B
THJBF244C
THJBF246A
THJBF246B
THJBF246C
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PDF
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TP6449
Abstract: MPF106 J300C MPF105
Text: -“ sPRAGÏÏË/SEniCOND GR OU P 8 5 14 0 1 9 SPRAGUE, ^3 J> Ô513Ô5G m S E M I C O N D S / ICS D003b0E 3> 93D 03602 7 ô • = 2 ^ - 2 5 " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C V g s [0 1
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OCR Scan
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D003b0E
O-226AA/STYLES
TP6449
MPF106
J300C
MPF105
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PDF
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NJ99
Abstract: NJ132 NJ16 TMPF4858A TMPF4859 TMPF4859A TMPF4860A TMPF4861 TMPF4861A TMPF4867
Text: ^3 SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE. D 13 A 5 Q Q 003 b i o T " | i • flS SEMICONDS / ICS 93D 03610 3> 7 ^-Z.f-Z.S SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh V(BR]GSS Min. (V) TMPF4858A
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OCR Scan
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Q003bio
TMPF4858A
NJ132
TMPF4859
TMPF4859A
NJ99
NJ132
NJ16
TMPF4860A
TMPF4861
TMPF4861A
TMPF4867
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PDF
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dna100
Abstract: mpf103 MPF107
Text: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 SPRA GU E. T3 » • Q50433Ô S E M I C O N D S / ICS D G ü 3 b Q 2 7 ■ ALGR 2> 93D 03602 PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH
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OCR Scan
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Q50433Ô
TP5951
TP5952
TP5953
TP6449
TP6450
TP6451
TP6452
TP6453
TP6454
dna100
mpf103
MPF107
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