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    NLAS4717FCT1G Price and Stock

    onsemi NLAS4717FCT1G

    SPDT, 2 FUNC, 1 CHANNEL, CMOS, PBGA10
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    Quest Components NLAS4717FCT1G 3,000
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    NLAS4717FCT1G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NLAS4717FCT1G On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717FCT1G On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF

    NLAS4717FCT1G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4685 Pr oduct Preview Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring


    Original     		NLAS4685 Microbump-10 489AA NLAS4717 BAT54 NLAS4717 Micro10 PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717 Micro10: NLAS4717/D PDF

    MAX4717

    Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717 Micro10: NLAS4717/D PDF

    MAX4717

    Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717 Micro10: NLAS4717/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717 Micro10: NLAS4717/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D PDF

    MAX4717

    Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717 NLAS4717 Micro-10: Microbump-10 489AA Micro-10 NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 PDF

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717 Micro10: NLAS4717/D PDF