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    NLAS4717 Price and Stock

    Rochester Electronics LLC NLAS4717FCT1G

    IC SW SPDTX2 3.5OHM 10MICROBUMP
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    DigiKey NLAS4717FCT1G Bulk 570,058 639
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    Rochester Electronics LLC NLAS4717EPMTR2G

    IC SWITCH SPDT X 2 3.5OHM 10WQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NLAS4717EPMTR2G Bulk 492,698 643
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    onsemi NLAS4717EPFCT1G

    IC SW SPDTX2 3.5OHM 10MICROBUMP
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    DigiKey NLAS4717EPFCT1G Cut Tape 2,135 1
    • 1 $1.5
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    NLAS4717EPFCT1G Digi-Reel 1
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    NLAS4717EPFCT1G Reel
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    Avnet Americas NLAS4717EPFCT1G Reel 0 Weeks, 2 Days 1,283
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    Verical NLAS4717EPFCT1G 30,150 12
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    Arrow Electronics NLAS4717EPFCT1G 30,150 1
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    NLAS4717EPFCT1G Cut Strips 500 99 Weeks 1
    • 1 $0.4923
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    Quest Components NLAS4717EPFCT1G 6,000
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    Rochester Electronics NLAS4717EPFCT1G 21,965 1
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    Flip Electronics NLAS4717EPFCT1G 45,000
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    onsemi NLAS4717MR2G

    IC SWITCH SPDTX2 3.5OHM 10MICRO
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    DigiKey NLAS4717MR2G Digi-Reel 1,985 1
    • 1 $2.13
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    NLAS4717MR2G Cut Tape 1,985 1
    • 1 $2.13
    • 10 $1.322
    • 100 $0.8961
    • 1000 $0.67014
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    NLAS4717MR2G Reel 4,000
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    Newark NLAS4717MR2G Reel 4,000
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    Rochester Electronics NLAS4717MR2G 7,267 1
    • 1 $0.6331
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    • 100 $0.5951
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    onsemi NLAS4717MR2

    IC SWITCH SPDTX2 3.5OHM 10MICRO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NLAS4717MR2 Reel 4,000
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    Find more NLAS4717 price and stock on Findchips.com

    NLAS4717 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NLAS4717 On Semiconductor Low Voltage Dual SPDT Analog Switch Original PDF
    NLAS4717EP On Semiconductor ESD Protection Dual Common Anode Diodes SOT-723 Original PDF
    NLAS4717EPFCT1G On Semiconductor Dual SPDT High Bandwidth USB 2.0 Compliant Analog Switch; Package: 10 PIN FLIP-CHIP; No of Pins: 10; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    NLAS4717EPFCT1G On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717EPMR2G On Semiconductor NLAS4717EP - IC DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO10, 3 X 5 MM, LEAD FREE, MICRO-10, Multiplexer or Switch Original PDF
    NLAS4717EPMTR2G On Semiconductor Dual SPDT High Bandwidth USB 2.0 Compliant Analog Switch; Package: WQFN10 1.4 x 1.8, 0.4mm Pitch; No of Pins: 10; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    NLAS4717EPMTR2G On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717FCT1 On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717FCT1 On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717FCT1G On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717FCT1G On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717MR2 On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717MR2 On Semiconductor 4.5 ohm High Bandwidth, Dual SPDT Analog Switch Original PDF
    NLAS4717MR2G On Semiconductor Dual SPDT High Bandwidth USB 2.0 Compliant Analog Switch Original PDF

    NLAS4717 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NLAS4717EPMTR2G

    Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 Micro10: NLAS4717/D

    MAX4717

    Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP Micro10: NLAS4717EP/D MAX4717 NLAS4717EPFCT1G 489AA

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 Micro10: NLAS4717/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP

    4717EP

    Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 Micro-10: NLAS4717/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D

    4717EP

    Abstract: No abstract text available
    Text: NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D

    MAX4717

    Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2 NLAS4717MR2G

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 Micro10: NLAS4717/D

    Xceive

    Abstract: BAT54 NLAS4717 NUP2201 NUP2301 TSSOP-6
    Text: AND8158/D NLAS4717 Analog Switch Permits USB 1.1 Switching Prepared by: Fred Zlotnick ON Semiconductor http://onsemi.com APPLICATION NOTE cables. For example, a connector may be Series A with a subminiature Series B connector on the other end. Another cable would be used for other purposes, for example,


    Original     		PDF AND8158/D NLAS4717 RS-232, Xceive BAT54 NUP2201 NUP2301 TSSOP-6

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 Micro10: NLAS4717/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 NLAS4717 Micro10: Flip-Chip-10: NLAS4717/D

    MAX4717

    Abstract: NLAS4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 NLAS4717 Micro-10: Microbump-10 489AA Micro-10 NLAS4717/D MAX4717 NLAS4717FCT1 NLAS4717FCT1G NLAS4717MR2

    Untitled

    Abstract: No abstract text available
    Text: NLAS4717 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717 is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring two low RDS(on) of 4.5 W at 3.0 V.


    Original     		PDF NLAS4717 Micro10: NLAS4717/D

    Untitled

    Abstract: No abstract text available
    Text: NLAS4685 Pr oduct Preview Ultra−Low Resistance Dual SPDT Analog Switch The NLAS4685 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw SPDT switch featuring


    Original     		PDF NLAS4685 Microbump-10 489AA NLAS4717 BAT54 NLAS4717 Micro10

    zener 5v6 0,5W

    Abstract: low voltage wireless mic ic PWM IC 8 PIN DIP 3842 varistor sck 037 I2S/PCM circuit diagram electronic choke for tube light SOD-923 zener NST3904F3T5G v sot-563 MOSFET 723 ic internal diagram
    Text: Low Profile, Small Footprint Packaging ON Semiconductor offers the latest in low-profile, small-outline packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging


    Original     		PDF OT-953 BRD8026-4 BRD8026/D zener 5v6 0,5W low voltage wireless mic ic PWM IC 8 PIN DIP 3842 varistor sck 037 I2S/PCM circuit diagram electronic choke for tube light SOD-923 zener NST3904F3T5G v sot-563 MOSFET 723 ic internal diagram

    1500w audio amplifier circuit

    Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
    Text: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies


    Original     		PDF SGD501/D 74VCX16373DT 74VCX16373DTR 74VCX16374DT 16BIT 74VCX16374DTR 80SQ045N 80SQ045NRL 1500w audio amplifier circuit Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G

    Maxim Integrated Products

    Abstract: MAX6377XR23-T MAX1692EUB MAX626CSA NCP1031DR2G MAX766 MAX6816EUS MAX762ESA MAX4420ESA MAX811SEUS-T
    Text: Competitor Name Maxim Integrated Products Inc Maxim Integrated Products Inc Maxim Integrated Products Inc Maxim Integrated Products Inc Maxim Integrated Products Inc Maxim Integrated Products Inc Maxim Integrated Products Inc Maxim Integrated Products Inc


    Original     		PDF

    NCP1522

    Abstract: NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501
    Text: Low Profile, Small Footprint Packaging ON Semiconductor offers the latest in low-profile, small-outline packaging. We enable the design and production of ultra-thin end-user products for the consumer market, by manufacturing some of the lowest profile packaging


    Original     		PDF OT-553, BRD8026-2 BRD8026/D NCP1522 NCP1521 NUF2030 transistor 669A SOT-23-5 PWM NUF2030XV6 ncp1400asn50 NCP5005 NCP1500 NCP1501