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    NON VOLATILE FERROELECTRIC MEMORY Search Results

    NON VOLATILE FERROELECTRIC MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    MYC0409-NA-EVM Murata Manufacturing Co Ltd 72W, Charge Pump Module, non-isolated DC/DC Converter, Evaluation board Visit Murata Manufacturing Co Ltd
    MP-54RJ45UNNE-002 Amphenol Cables on Demand Amphenol MP-54RJ45UNNE-002 Cat5e Non-Booted Patch Cable with RJ45 Connectors (350MHz) 2ft Datasheet
    MP-54RJ45UNNE-001 Amphenol Cables on Demand Amphenol MP-54RJ45UNNE-001 Cat5e Non-Booted Patch Cable with RJ45 Connectors (350MHz) 1ft Datasheet
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy

    NON VOLATILE FERROELECTRIC MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    non volatile ferroelectric memory

    Abstract: SYFR8128FK-15 SYFR8128FK
    Text: 128K x 8 FRAM SYFR8128FK-15 Issue 1.0 August 2001 Description The SYFR8128FK is a 2.7~3.6V 1Mbit non volatile memory module employing advanced ferroelectric devices. A ferroelectric random access memory or FRAM is nonvolatile but operates similar to SRAM.


    Original     		PDF SYFR8128FK-15 SYFR8128FK 150ns SYFR8128FKI non volatile ferroelectric memory SYFR8128FK-15

    Untitled

    Abstract: No abstract text available
    Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.


    Original     		PDF MB85R2001/MB85R2002 A0-16 MB85RS256 256K-bit MB85R4xxx MB85R2001 MB85R2002 MB85R1001

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-6E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-6E MB85R1002 MB85R1002

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-5E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-5E MB85R1002 MB85R1002

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13108-4E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13108-4E MB85R2002 MB85R2002

    MB85R1002

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-3E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-3E MB85R1002 MB85R1002 F0708

    MB85R2001PFTN-GE1

    Abstract: MB85R2001
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-3Ea Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-3Ea MB85R2001 MB85R2001 MB85R2001PFTN-GE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-5E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13108-5E MB85R2002 MB85R2002

    MB85R2002

    Abstract: MB85R2002PFTN-GE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-2E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13108-2E MB85R2002 MB85R2002 F0709 MB85R2002PFTN-GE1

    MB85R2001

    Abstract: MB85R2001PFTN-GE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-2E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-2E MB85R2001 MB85R2001 F0709 MB85R2001PFTN-GE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-1E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13108-1E MB85R2002 MB85R2002 F0704

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13103-7E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13103-7E MB85R1001 MB85R1001

    MB85R1001

    Abstract: MB85R1001PFTN-GE1
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13103-6Ea Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13103-6Ea MB85R1001 MB85R1001 MB85R1001PFTN-GE1

    MB85R1001

    Abstract: MB85R1001PFTN-GE1 FPT-48P-M25
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-5E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13103-5E MB85R1001 MB85R1001 F0708 MB85R1001PFTN-GE1 FPT-48P-M25

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13104-2E Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-2E MB85R1002 MB85R1002 F0701

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13103-8E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001 • DESCRIPTIONS The MB85R1001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13103-8E MB85R1001 MB85R1001

    PSEUDO SRAM

    Abstract: MB85R1002 din 3102
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13104-4Ea Memory FRAM CMOS 1 M Bit 64 K x 16 MB85R1002 • DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13104-4Ea MB85R1002 MB85R1002 PSEUDO SRAM din 3102

    Fujitsu IR c code

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-4E MB85R2001 MB85R2001 Fujitsu IR c code

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-1E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-1E MB85R2001 MB85R2001 F0704

    FUJITSU FRAM

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-5E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-5E MB85R2001 MB85R2001 FUJITSU FRAM

    Untitled

    Abstract: No abstract text available
    Text: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM's non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash


    OCR Scan     		PDF 16kbit BR24CF16F BR24CF16F

    Untitled

    Abstract: No abstract text available
    Text: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash


    OCR Scan     		PDF 16kbit BR24CF16F BR24CF16F

    BR24CF16F

    Abstract: sis00
    Text: Memory IC 16kbit serial ferroelectric memory BR24 CF 16 F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash


    OCR Scan     		PDF 16kbit BR24CF16F BR24CF16F sis00

    Untitled

    Abstract: No abstract text available
    Text: Memory IC 16kbit serial ferroelectric memory BR 24C F16F The BR24CF16F is a non-volatile ferroelectric m em ory developed for use in ROHM’s non-volatile m em ory technolo­ gy and ferroelectric technology. Using a ferroelectric m em ory enables faster w riting speeds than EEPROM and flash


    OCR Scan     		PDF 16kbit BR24CF16F