application notes
Abstract: AN0048 GPCH MIDI
Text: AN0048 Application Notes for GPCH4/8 Driver JUN. 13, 2008 Application Notes for GPCH4/8 Driver 1 Description The GPCH4/8 Demo Code Driver v1.00/v1.01 has two known bugs. Users should refer to this application note to avoid system running into abnormal operation in certain conditions while MIDI is
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AN0048
00/v1
Channel-16
application notes
AN0048
GPCH
MIDI
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Notes for Operation II
Abstract: diode laser laser diode laser diode lifetime Laser Diode Mounts HIGH POWER DIODE
Text: Notes for Operation II SAFETY / HANDLING / WARRANTY 1. Diode Laser Safety and General Handling Instructions 1.1 Safety Instructions High power diode lasers are - according to IEC-Standard1 - class 4 laser products. The IEC-Standard includes safety regulations for eye and personnel protection, that
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circuit board satellite tuner
Abstract: low-noise L-band tuner schematic circuit board satellite tuner MAX2108 AN1986 line AMPLIFIER satellite APP1986 MAX4145 L-band Tuner 950-MHz
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, rfic, tuner, downconverter, satellite, wireless ic, qpsk modulation, rf ics, integrated circuits Jun 01, 2001 APPLICATION NOTE 1986 REP026: Direct-Conversion Tuner Optimized for Operation from 950MHz to 1750MHz
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REP026:
950MHz
1750MHz
MAX2108
1750MHz
-20dBm
1749MHz,
1751MHz,
1740MHz.
circuit board satellite tuner
low-noise L-band tuner
schematic circuit board satellite tuner
AN1986
line AMPLIFIER satellite
APP1986
MAX4145
L-band Tuner
950-MHz
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uPD71101
Abstract: PD71101 UPD74AC74 28H-2AH S3 GRAPHICS U10661E
Text: LOW-VOLTAGE OPERATION DRAM 1996 Document No. M11411EJ2V0AN00 2nd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
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M11411EJ2V0AN00
uPD71101
PD71101
UPD74AC74
28H-2AH
S3 GRAPHICS
U10661E
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AN2869
Abstract: MAX253 APP2869 MAX2530
Text: Maxim/Dallas > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, rfic, wireless, band, class 5, cdma2000, front end receiver, lna, low noise amplifier, downconverter, impedance match, tune bias Nov 21, 2003 APPLICATION NOTE 2869 Tune the MAX2530 LNA for 450MHz CDMA2000 Operation
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cdma2000,
MAX2530
450MHz
CDMA2000
450MHz,
cdma2000
AN2869
MAX253
APP2869
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intel e28f128
Abstract: E28F128 Ports-J16 hyperterminal BDS Thread UCB1300 SA-1111 SA1100 SA-1110 Intel StrongARM* SA-1110 Development Board Hardware Release Notes
Text: E Running Windows* CE for Automotive on Intel StrongARM* SA-1110/SA-1111 Development Platform Application Notes Intel® Telematics Operation August, 2001 RUNNING WINDOWS* CE FOR AUTOMOTIVE E The author of this document has made every reasonable attempt to ensure that the content herein is correct, timely and understandable to a wide
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SA-1110/SA-1111
USB1300
UDA1341
SA1110DP
UCB1300,
UDA1341,
intel e28f128
E28F128
Ports-J16
hyperterminal
BDS Thread
UCB1300
SA-1111
SA1100
SA-1110
Intel StrongARM* SA-1110 Development Board Hardware Release Notes
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1090Mhz LNA
Abstract: GSM LNA AN797 GSM ic REP027 gsm amplifier schematic APP797 MAX2338 measurement rf gsm
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lnas, low noice amplifiers, mixer, rf, rfic, cdma, gsm, wireless, rf ics, front end ic Sep 07, 2001 APPLICATION NOTE 797 MAX2338 LNAs and Downconverters Optimized for GSM Front-End REP027 Abstract: The MAX2338 front-end IC is tuned to support GSM and DCS operation at 942MHz and 1842MHz. A
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MAX2338
REP027)
942MHz
1842MHz.
270MHz
com/an797
MAX2338:
AN797,
1090Mhz LNA
GSM LNA
AN797
GSM ic
REP027
gsm amplifier schematic
APP797
measurement rf gsm
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GRM36X5R104K010
Abstract: UMK105CH330JW schematics for a PA amplifier MAX2242 EC0249 DECT telephone schematic MAX2242EVKIT MAX2644 schematic diagram power amplifier free a abstract on digital european cordless telephone
Text: Maxim > App Notes > Wireless and RF Keywords: rf, rfic, pa, dect, cordless, power amplifier, rf ics May 01, 2002 APPLICATION NOTE 1008 Optimize the MAX2242 PA for 2.4GHz DECT Cordless Phone Applications Abstract: The main objective of this application note is to provide the overall performance summary of the MAX2242 in nonlinear operation. A detailed optimization procedure of the MAX2242 is provided to assist the power amplifier PA designer in
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MAX2242
MAX2242:
MAX2644:
com/an1008
AN1008,
APP1008,
Appnote1008,
GRM36X5R104K010
UMK105CH330JW
schematics for a PA amplifier
EC0249
DECT telephone schematic
MAX2242EVKIT
MAX2644
schematic diagram power amplifier free a
abstract on digital european cordless telephone
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IR 10D 8A
Abstract: No abstract text available
Text: K7R323684M K7R321884M K7R320884M Preliminary 1Mx36 & 2Mx18 & 4Mx8 QDRTM II b4 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRTM II b4 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June 30, 2001 Advance 0.1 1. Package dimension modify.
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K7R323684M
K7R321884M
K7R320884M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
13mmx15mm
15mmx17mm
IR 10D 8A
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Untitled
Abstract: No abstract text available
Text: K7R163684B K7R161884B K7R160884B Advance 512Kx36 & 1Mx18 & 2Mx8 QDRTM II b4 SRAM Document Title 512Kx36-bit,1Mx18-bit, 2Mx8-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. Oct. 17. 2002 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7R163684B
K7R161884B
K7R160884B
512Kx36
1Mx18
512Kx36-bit
1Mx18-bit,
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4MX9
Abstract: No abstract text available
Text: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001
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K7R323682M
K7R321882M
K7R320982M
K7R320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
-FC25
4MX9
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Untitled
Abstract: No abstract text available
Text: Datasheet R1Q4A4436RBG, R1Q4A4418RBG 144-Mbit DDR II SRAM 2-word Burst R10DS0146EJ0101 Rev.1.01 Nov 18, 2013 Description The R1Q4A4436RBG is a 4,194,304-word by 36-bit and the R1Q4A4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
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R1Q4A4436RBG,
R1Q4A4418RBG
144-Mbit
R10DS0146EJ0101
R1Q4A4436RBG
304-word
36-bit
R1Q4A4418RBG
608-word
18-bit
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design of 4-20mA transmitter for bridge type transducer using op-amp
Abstract: "Current to Voltage Converter" 4-20ma using LM358 lm358 4-20mA design of 4-20mA transmitter for bridge type transducer using op-amp instrumentation amplifier 4-20mA transmitter for a bridge type transducer using op-amp LM341A 4-20ma using LM358 eeg amplifier examples 0-10v to 4-20ma 4 to 20ma current source circuit diagram lm358
Text: APPLICATION NOTES Linear Optocouplers Introduction Description This application note describes isolation amplifier design principles for the LOC Series linear optocoupler devices. It describes the circuit operation in photoconductive and photovoltaic modes and provides some examples of
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40kHz.
design of 4-20mA transmitter for bridge type transducer using op-amp
"Current to Voltage Converter" 4-20ma using LM358
lm358 4-20mA
design of 4-20mA transmitter for bridge type transducer using op-amp instrumentation amplifier
4-20mA transmitter for a bridge type transducer using op-amp
LM341A
4-20ma using LM358
eeg amplifier examples
0-10v to 4-20ma
4 to 20ma current source circuit diagram lm358
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Untitled
Abstract: No abstract text available
Text: fax id: 5602 Sm ^ |> » r VIC64 ! f~~* j*'' |^ ]L~|_? VMEbus Interface Controller with D64 Functionality • See th e VIC64/7C964 Design Notes for more informa tion Features • An enhanced VIC068A Functional Description — 64-bit MBLT operation — Higher transfer rate
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VIC64
VIC64/7C964
VIC068A
64-bit
non-68K
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CL-GD754X
Abstract: No abstract text available
Text: CL-GD7548 XG A/SVG A LCD Controller iCIRRUS LOGIC Appendix L Hardware Configuration Notes L.1 Introduction The CL-GD7548 memory data pins are used to program the CL-GD7548 for operation. The resistance that appears on the memory data pins is read during the low-to-high transition of the system reset pulse,
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CL-GD7548
CL-GD7548
CL-GD754X
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Untitled
Abstract: No abstract text available
Text: in te l P R S U IM IO IiQ A Ifflf 28F016SA 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFile MEMORY • ■ ■ ■ ■ User-Selectable 3.3V or 5V Vcc ■ Revolutionary Architecture User-Configurable x8 or x16 Operation — Pipelined Command Execution 70 ns Maximum Access Time
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28F016SA
16-MBIT
56-Lead,
16-Mbit
MfiSbl75
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Untitled
Abstract: No abstract text available
Text: Ä M Ä K I I 0 M F @ [^ O ii]Ä ¥ 0 ® M VS28F016XS, MS28F016XS 16-MBIT 1 MBIT x 16, 2 MBIT x 8 SYNCHRONOUS FLASH MEMORY • VS28F016XS 40°C to +125°C — QML Certified — SE2 Grade ■ 0.25 MB/sec Write Transfer Rate ■ MS28F016XS 55°C to 125°C
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VS28F016XS,
MS28F016XS
16-MBIT
VS28F016XS
MS28F016XS
VE28F008,
M28F008
28F016SA
56-Lead
128-Kbyte
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Untitled
Abstract: No abstract text available
Text: WWW CMOS 2 BANKS OF 131,072-WORDS x 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS m II/IO R Y • DESCRIPTION The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing 8,388,608 memory cells accessible in an 32-bit format. The MB81G83222 features a fully synchronous operation
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072-WORDS
32-BIT
MB81G83222
s83i222
F9703
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29F200
Abstract: HY29F200T
Text: mV *• Y II M n A I ■ l i ■■ ■■ » 1 ■ HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEYFEATURES • 5.0 V 1 10% Read, Program, and Erase • - Minimizes system-level power requirements • - RY//BY output pin for detection of
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HY29F200T/B
HY29F200
16-Bit)
G-70I
T-70I
R-70I
G-70E,
T-70E,
R-70E
G-90I
29F200
HY29F200T
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32KHZ
Abstract: No abstract text available
Text: HMM ta » •• •I■■■■•» ■■ •• ■■ III! w i i r a /\ Electrical Specifications . Electrical Specifications 65548 ABSOLUTE MAXIMUM CONDITIONS Mn - Typ Max 1.8 Units W Supply Voltage -0.5 - 7.0 V Vj Input Voltage -0.5 - Vcc+0.5 V V0
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Tsc-10
32KHZ
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Untitled
Abstract: No abstract text available
Text: MEMORY 2 x 5 1 2 K x 1 6 B IT S «•y 11Ü ■¡11 1111 9 9 A- mm ¡¡¡¡Ìli III* mm * c\ llli MB8111'* CMOS 2-BANK 524,288-WORD x 16 BITS Synchronous Dynamic Random Access Memory DESCRIPTION The Fujitsu M B811171622A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing
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MB8111'
288-WORD
B811171622A
16-bit
1171622A
171622A
F9703
MP-SDRAMM-DS-20363
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Untitled
Abstract: No abstract text available
Text: P R lO B M A IifR r ¡ n ie l M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum
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M28F020
2048K
MD28F020-90
MF28F020-90
MD28F020-12
MF28F020-12
MD28F020-15
MF28F020-15
MD28F020-20
MF28F020-20
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AM29F002
Abstract: am29f002t Am29F002N
Text: PRELIMINARY AM D ii Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F002/Am29F002N
AM29F002/AM29F002N
AM29F002
am29f002t
Am29F002N
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Untitled
Abstract: No abstract text available
Text: iir tls J W W C T [p ^l¥0i 2-MBIT (128K x 16, 256K x 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F002BV-T/B, 28F200CV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — 60% Faster Typical Programming at
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28F200BV-T/B,
28F002BV-T/B,
28F200CV-T/B
28F004/400B
28F002/200B
USA/1294/8K/MS
4fl2fal75
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