NPN DARLINGTON IC SCHEMATIC Search Results

NPN DARLINGTON IC SCHEMATIC Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
7UL2T125FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
7UL2T126FK	Toshiba Electronic Devices & Storage Corporation	One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC
74HC4051FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC

NPN DARLINGTON IC SCHEMATIC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BDW42G Abstract: 30VDC BDW42 BDW46 BDW46G BDW47 BDW47G Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.	Original	BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D 30VDC BDW42 BDW46 BDW46G BDW47	PDF
TO-220AB transistor package Abstract: bdw42G Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.	Original	BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 O-220AB BDW42/D TO-220AB transistor package	PDF
Untitled Abstract: No abstract text available Text: BDW42G - NPN, BDW46G, BDW47G - PNP Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 typ @ IC = 5.0 Adc.	Original	BDW42G BDW46G, BDW47G BDW46 BDW42/BDW47 220AB BDW42/D	PDF
2N6284G Abstract: 2N6284-D 2N6287G 2N6286G 1N5825 2N6284 2N6286 2N6287 Text: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc −	Original	2N6284 2N6286, 2N6287 2N6286 2N6284/87 2N628t 2N6284/D 2N6284G 2N6284-D 2N6287G 2N6286G 1N5825 2N6284 2N6286 2N6287	PDF
2n6284 Abstract: No abstract text available Text: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Features • High DC Current Gain @ IC = 10 Adc −	Original	2N6284 2N6286, 2N6287 2N6286 2N6284/87 2N6284/D 2n6284	PDF
2N6282 MOTOROLA Abstract: 2N6282 2N6287 2n6285 1N5825 2N6283 2N6284 2N6286 MSD6100 2N6284 motorola Text: MOTOROLA Order this document by 2N6282/D SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc —	Original	2N6282/D 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6282 MOTOROLA 2N6282 2N6287 2n6285 1N5825 2N6283 2N6284 2N6286 MSD6100 2N6284 motorola	PDF
2N605 Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224 Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc	Original	2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224	PDF
mj150* darlington mj15002 Abstract: BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency switching applications. • High DC Current Gain @ IC = 10 Adc — hFE = 2400 Typ — 2N6282, 2N6283, 2N6284	Original	2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6286 mj150* darlington mj15002 BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100	PDF
TIP140 Abstract: tip142 TIP141 transistor tip142 MPS-U52 pnp resistor darlington TIP142 power amplifier tip142/TIP147 AMPLIFIER CIRCUIT Text: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V TIP142 * PNP	Original	TIP140 TIP141* TIP142 TIP145 TIP146 TIP147 TIP141 TIP142 transistor tip142 MPS-U52 pnp resistor darlington TIP142 power amplifier tip142/TIP147 AMPLIFIER CIRCUIT	PDF
Untitled Abstract: No abstract text available Text: TIP140, TIP141, TIP142, NPN ; TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − • • • Min hFE = 1000 @ IC	Original	TIP140, TIP141, TIP142, TIP145, TIP146, TIP147, TIP145 TIP146	PDF
tip142/TIP147 AMPLIFIER CIRCUIT Abstract: MPS-U52 TIP142 Application Note TIP140/D tip142/147 tip141 equivalent 1N5825 MSD6100 TIP140 TIP141 Text: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors TIP142 * . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V PNP	Original	TIP140 TIP141* TIP142 TIP145 TIP146 TIP147 TIP140, TIP141, tip142/TIP147 AMPLIFIER CIRCUIT MPS-U52 TIP142 Application Note TIP140/D tip142/147 tip141 equivalent 1N5825 MSD6100 TIP140 TIP141	PDF
TIP14x Abstract: TIP147G 80K-40 TIP140-D tip142g TIP141G Text: TIP140, TIP141, TIP142, NPN ; TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − • • • Min hFE = 1000 @ IC	Original	TIP140, TIP141, TIP142, TIP145, TIP146, TIP147, TIP145 TIP146 TIP14x TIP147G 80K-40 TIP140-D tip142g TIP141G	PDF
TIP142 Application Note Abstract: TIP147 Application Note 300 watts amplifier schematics tip142/TIP147 AMPLIFIER CIRCUIT darlington TIP142 power amplifier TIP141 TIP142 TIP145 TIP142 TIP147 1N5825 Text: ON Semiconductort NPN TIP140 TIP141* Darlington Complementary Silicon Power Transistors TIP142 * . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V PNP	Original	TIP140 TIP141* TIP142 TIP145 TIP146 TIP147 TIP140, TIP141, TIP142 Application Note TIP147 Application Note 300 watts amplifier schematics tip142/TIP147 AMPLIFIER CIRCUIT darlington TIP142 power amplifier TIP141 TIP142 TIP145 TIP142 TIP147 1N5825	PDF
bd775 Abstract: 2SC7 BD779 Diode BAY 61 bd776 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD777 PNP BD776 BD778 BD780 * Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain hFE = 1400 Typ @ IC = 2.0 Adc	Original	BD776 BD777, BD780 BD777 BD778 TIP73B TIP74 TIP74A bd775 2SC7 BD779 Diode BAY 61 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010	PDF

2N6286 Abstract: 2n6284 2N6287 2N6284G 80 amp 30v npn darlington 2n6284 transistor circuit schematic Text: 2N6284 NPN ; 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general-purpose amplifier and low-frequency switching applications. Features •ăHigh DC Current Gain @ IC = 10 Adc hFE = 2400 (Typ) - 2N6284	Original	2N6284 2N6286, 2N6287 2N6286 2N6284/87 2N6284/D 2n6284 2N6287 2N6284G 80 amp 30v npn darlington 2n6284 transistor circuit schematic	PDF
Untitled Abstract: No abstract text available Text: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc	Original	TIP131, TIP132 TIP137 TIP131 TIP132, TIP137 O-220AB TIP131/D	PDF
1N5825 Abstract: 2N6283 2N6284 2N6286 2N6287 MSD6100 amplifier transistor 2N6284 Text: ON Semiconductort NPN 2N6283 Darlington Complementary Silicon Power Transistors 2N6284 . . . designed for general−purpose amplifier and low−frequency switching applications. PNP 2N6286 • High DC Current Gain @ IC = 10 Adc − • • w hFE = 2400 Typ − 2N6284	Original	2N6283 2N6284 2N6286 2N6287 2N6284/D 1N5825 2N6283 2N6284 2N6286 2N6287 MSD6100 amplifier transistor 2N6284	PDF
2N6284-D Abstract: 1N5825 2N6283 2N6284 2N6286 2N6287 MSD6100 Text: ON Semiconductort NPN Darlington Complementary Silicon Power Transistors 2N6283 . . . designed for general–purpose amplifier and low–frequency switching applications. 2N6286 2N6284 PNP • High DC Current Gain @ IC = 10 Adc – • • 2N6287 hFE = 2400 Typ – 2N6284	Original	2N6283 2N6286 2N6284 2N6287 r14525 2N6284/D 2N6284-D 1N5825 2N6283 2N6284 2N6286 2N6287 MSD6100	PDF
2N6282 Abstract: No abstract text available Text: ON Semiconductort NPN Darlington Complementary Silicon Power Transistors 2N6282 . . . designed for general−purpose amplifier and low−frequency switching applications. 2N6284* thru • High DC Current Gain @ IC = 10 Adc — • • PNP 2N6285 hFE = 2400 Typ — 2N6282, 2N6283, 2N6284	Original	2N6282 2N6284* 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285	PDF
BDW41 Abstract: 1N5825 BDW40 BDW42 BDW46 BDW47 MSD6100 Text: MOTOROLA Order this document by BDW42/D SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc.	Original	BDW42/D BDW42* BDW46 BDW47* BDW42/BDW47 220AB BDW42/D* BDW41 1N5825 BDW40 BDW42 BDW46 BDW47 MSD6100	PDF
1N5825 Abstract: BDW42 BDW46 BDW47 MSD6100 Text: ON Semiconductor NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 typ.) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:	Original	BDW42 BDW46 BDW47 BDW42/BDW47 220AB r14525 BDW42/D 1N5825 BDW42 BDW46 BDW47 MSD6100	PDF
NTE2540 Abstract: 600V NPN 2A Text: NTE2540 Silicon NPN Transistor Darlington, High Voltage Switch Features: D High DC Current Gain: hFE = 600 Min VCE = 2V, IC = 2A D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)	Original	NTE2540 NTE2540 600V NPN 2A	PDF
BDW45 Abstract: 1N5825 BDW42 BDW46 BDW47 MSD6100 Text: ON Semiconductort NPN BDW42 * Darlington Complementary Silicon Power Transistors PNP BDW46 . . . designed for general purpose and low speed switching applications. BDW47 * • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:	Original	BDW42 BDW46 BDW47 BDW42/BDW47 220AB r14525 BDW42/D BDW45 1N5825 BDW42 BDW46 BDW47 MSD6100	PDF
TIP142 TRANSISTOR REPLACEMENT Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V	Original	TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142	PDF

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NPN DARLINGTON IC SCHEMATIC Search Results

NPN DARLINGTON IC SCHEMATIC Result Highlights (5)

NPN DARLINGTON IC SCHEMATIC Datasheets Context Search

BDW42G

TO-220AB transistor package

Untitled

2N6284G

2n6284

2N6282 MOTOROLA

2N605

mj150* darlington mj15002

TIP140

Untitled

tip142/TIP147 AMPLIFIER CIRCUIT

TIP14x

TIP142 Application Note

bd775

2N6286

Untitled

1N5825

2N6284-D

2N6282

BDW41

1N5825

NTE2540

BDW45

TIP142 TRANSISTOR REPLACEMENT