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    NPN IC 400MA Search Results

    NPN IC 400MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    NPN IC 400MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN4C05JU

    Abstract: No abstract text available
    Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Unit: mm Low Frequency Amplifier Applications Muting Applications Switching Applications Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) High Collector Current :IC=400mA(Max.)


    Original     		PDF HN4C05JU 400mA HN4C05JU

    Untitled

    Abstract: No abstract text available
    Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifer Applications Muting Application Switching Application Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.)


    Original     		PDF HN1C05FE 400mA

    hn1c05FE

    Abstract: No abstract text available
    Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA High Collector Current :IC=400mA(Max.)


    Original     		PDF HN1C05FE 400mA hn1c05FE

    Untitled

    Abstract: No abstract text available
    Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Unit: mm Low Frequency Amplifer Applications Muting Application Switching Application Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) High Collector Current :IC=400mA(Max.)


    Original     		PDF HN4C05JU 400mA

    Untitled

    Abstract: No abstract text available
    Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications Unit: mm z Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current : IC = 400mA(Max.)


    Original     		PDF HN4C05JU 400mA

    Untitled

    Abstract: No abstract text available
    Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1) = 15mV (typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current : IC = 400mA (max)


    Original     		PDF HN1C05FE 400mA

    Untitled

    Abstract: No abstract text available
    Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications z Unit: mm Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current :IC=400mA(Max.)


    Original     		PDF HN4C05JU 400mA

    Untitled

    Abstract: No abstract text available
    Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current :IC=400mA(Max.)


    Original     		PDF HN1C05FE 400mA

    SOT-89

    Abstract: TSB1664CY TSD1664 sot89 "NPN TRANSISTOR"
    Text: TSD1664 Low Frequency NPN Transistor BVCEO = 20V Ic = 800mA VCE SAT , = 0.15V(typ.) @Ic / Ib = 400mA / 20mA Pin assignment: 1. Base 2. Collector 3. Emitter Features — Ordering Information Low VCE (SAT). Part No. — Excellent DC current gain characteristics


    Original     		PDF TSD1664 800mA 400mA TSB1664CY OT-89 TSB1664 OT-89 SOT-89 TSB1664CY TSD1664 sot89 "NPN TRANSISTOR"

    HN4C05JU

    Abstract: No abstract text available
    Text: HN4C05JU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN4C05JU Low Frequency Amplifier Applications Muting Applications Switching Applications z Unit: mm Low Saturation Voltage : VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA) z High Collector Current :IC=400mA(Max.)


    Original     		PDF HN4C05JU 400mA HN4C05JU

    hn1c05FE

    Abstract: No abstract text available
    Text: HN1C05FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C05FE Unit: mm Low Frequency Amplifier Applications Muting Application Switching Application z Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA z High Collector Current :IC=400mA(Max.)


    Original     		PDF HN1C05FE 400mA hn1c05FE

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor HN1C07F Unit: mm Features Excellent Current Gain hFE linearity :hFE=25(min) at VCE=6V,IC=400mA 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50


    Original     		PDF HN1C07F 400mA 100mA 100mA,

    FZT694B

    Abstract: DSA003714
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT694B TYPICAL CHARACTERISTICS IC/IB=200 0.8 - Volts - (Volts) IC/IB =10 0.6 0.6 0.2 0.1 1 1.4 0.01 10 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC


    Original     		PDF OT223 FZT694B 200mA 100mA, 200mA, 400mA, 50MHz FZT694B DSA003714

    2SC4296

    Abstract: No abstract text available
    Text: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max


    Original     		PDF 2SC4296 Pulse20) 400min 10typ 85typ 100max FM100 2SC4296

    LB1233

    Abstract: LB1234 Array Of Independent Diodes, Dip16 LB1231 LB1232 IN4 diode
    Text: Ordering number : EN1188F Monolithic Digital IC LB1231 Series High-Voltage, Large Current Darlington Transistor Array Overview The circuit configuration of this IC is of 7-channel Darlington transistor array consisting of NPN transistors. It is especially


    Original     		PDF EN1188F LB1231 500mA) LB1231 LB1232 LB1233 LB1234 LB1233 LB1234 Array Of Independent Diodes, Dip16 LB1232 IN4 diode

    2SC4130

    Abstract: FM20 transistor+2sC4130
    Text: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=3A 10 to 30 16.9±0.3 100max IC=25mA IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj


    Original     		PDF 2SC4130 Pulse14) 100max 400min 15typ 50typ O220F) 2SC4130 FM20 transistor+2sC4130

    Untitled

    Abstract: No abstract text available
    Text: EMD9FHA / UMD9NFHA / IMD9AFRA EMD9 / UMD9N / IMD9A NPN + PNP Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet AEC-Q101 Qualified <For DTr1(NPN)> lOutline Parameter VCC IC(MAX.) R1 R2 Value EMT6 50V 100mA 10kW 47kW (6) (1) EMD9 EMD9FHA


    Original     		PDF AEC-Q101 100mA -100mA SC-107C) OT-353 SC-88) OT-457 SC-74) DTC114Y DTA114Y

    Untitled

    Abstract: No abstract text available
    Text: 2SC3678 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor µA V IEBO VEB=7V 100max µA V 7 V V(BR)CEO IC=10mA 800min IC 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 80(Tc=25°C) W VBE(sat)


    Original     		PDF 2SC3678 100max 800min 50typ MT-100

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR IC/IB=200 -55°C +25°C +100°C +175°C Tamb=25°C IC/IB=100 0.8 0.8 IC/IB =10 0.6 IC/IB=100 0.6 E C ABSOLUTE MAXIMUM RATINGS. 0.4 0.2 PARAMETER 0.2 0.01 0.1 1 0.01 10 + 1.4 0.1 1 10 + +100°C +25°C


    Original     		PDF OT223 FZT694B 200mA 100ms 100us

    bc182c

    Abstract: t092 BC182LC BC237B bc182l T0-92 bc186 BC212
    Text: SEMELAB LTD 37E » Ö1331Ö7 0GGG032 4 IS nL B T ~ -^ 7 -o Reliability Option TVpe No. Package Polarity v CEO •c cont hF E @ V c e /Ic »T Pd BC182B BC182C BC182L BC182LA BC182LB NPN NPN NPN NPN NPN T092 T092 T092 T092 T092 50 50 50 50 50 0.2 0.2 0.2 0.2


    OCR Scan     		PDF 0GGG032 BC182B BC182C BC182L BC182LA BC182LB BC182LC BC183 BC183A BC183B t092 BC237B bc182l T0-92 bc186 BC212

    2sc3474

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3474 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. &8MAX. FEATURES : . High DC Current: Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0 •5V(Max.) (Ic=300mA) 06±015


    OCR Scan     		PDF 2SC3474 400mA) 300mA) 100mA 2sc3474

    2SC3474

    Abstract: No abstract text available
    Text: 2SC3474 SILICON NPN EPITAXIAL TYPE INDUSTRIAL APPLICATIONS Unit in a SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. S8MAX. FEATURES : . High DC Current Gain : hFE=500 Min. (Ic=400mA) . Low Saturation Voltage: VcE(sat)=0-5V(Max.)(Ic=300mA) Û 9 5M A X .


    OCR Scan     		PDF 2SC3474 400mA) 300mA) 2SC3474

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3673 Unit in mm SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. • High DC Current Gain: hj-j;=500 Min. (Ic=400mA) • Low Saturation Voltage: V^£(sat)=0.5V (Max.) (Ic=300mA) MAXIMUM RATINGS (Ta=25° C) SYMBOL RATING


    OCR Scan     		PDF 2SC3673 400mA) 300mA) 400mA 300mA, 300mAf

    2SC3964

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC3964 SWITCHING APPLICATIONS. SOLENOID DRIVE APPLICATIONS. TEMPERATURE COMPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE. FEATURES: . High ÜC Current Gain : hpE= 500 Min. (Ic=400nA) . Low Saturation Voltage : VcE(sat)=0-5V(Max.) (Ic=300raA)


    OCR Scan     		PDF 2SC3964 400nA) 300raA) 2SC3964