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    NTD4808N Search Results

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    NTD4808N Price and Stock

    onsemi NTD4808NT4G

    MOSFET N-CH 30V 10A/63A DPAK
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    DigiKey NTD4808NT4G Reel
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    Rochester Electronics NTD4808NT4G 22,486 1
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    onsemi NTD4808N-1G

    MOSFET N-CH 30V 10A/63A IPAK
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    TME NTD4808N-1G 1
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    EBV Elektronik NTD4808N-1G 65 Weeks 75
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    Rochester Electronics LLC NTD4808NT4G

    MOSFET N-CH 30V 10A/63A DPAK
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    DigiKey NTD4808NT4G Bulk 1,402
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    onsemi NTD4808N-35G

    MOSFET N-CH 30V 10A/63A IPAK
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    Rochester Electronics NTD4808N-35G 4,265 1
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    Rochester Electronics LLC NTD4808N-35G

    MOSFET N-CH 30V 10A/63A IPAK
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    DigiKey NTD4808N-35G Tube 2,664
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    NTD4808N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD4808N On Semiconductor Power MOSFET 30 V, 63 A, N-Channel, DPAK/IPAK Original PDF
    NTD4808N-1G On Semiconductor Power MOSFET 30 V, 63 A, N-Channel, DPAK Original PDF
    NTD4808N-35G On Semiconductor Power MOSFET 30 V, 63 A, N-Channel, DPAK/IPAK Original PDF
    NTD4808NT4G On Semiconductor Power MOSFET 30 V, 63 A, N-Channel, DPAK Original PDF

    NTD4808N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48 08NG

    Abstract: 4808ng 369D NTD4808N 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 4808ng 369D NTD4808N 08NG

    08NG

    Abstract: No abstract text available
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 08NG

    4808ng

    Abstract: 08NG
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 4808ng 08NG

    48 08NG

    Abstract: 369D NTD4808N NTD4808NT4G 08ng
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 369D NTD4808N NTD4808NT4G 08ng

    Untitled

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N NTD4808N/D

    48 08NG

    Abstract: 369D 4808ng 08NG NTD4808N
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 369D 4808ng 08NG NTD4808N

    48 08NG

    Abstract: 369D NTD4808N NTD4808N35G TR 069
    Text: NTD4808N Power MOSFET 30 V, 63 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4808N NTD4808N/D 48 08NG 369D NTD4808N NTD4808N35G TR 069

    Untitled

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N NTD4808N/D

    NVD4808N

    Abstract: No abstract text available
    Text: NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVD Prefix for Automotive and Other Applications Requiring


    Original     		PDF NTD4808N, NVD4808N AEC-Q101 NTD4808N/D

    AND8350

    Abstract: NTGS4141NT1G NTD4808N-1G NTMS4177PR2G ntsg4111pt1g poly switch fuse ntr4170nt1g NTD4815N-1G NTHS4166NT1G 5-A19
    Text: AND8350 eFuse Reverse Voltage Protection Prepared by: Alan Ball ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction the high side or an n-channel FET can be added in the low side. N-channel FETs are more cost effective and are normally preferred if it is acceptable to break the ground line. If the


    Original     		PDF AND8350 AND8350/D AND8350 NTGS4141NT1G NTD4808N-1G NTMS4177PR2G ntsg4111pt1g poly switch fuse ntr4170nt1g NTD4815N-1G NTHS4166NT1G 5-A19

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    ncp5215

    Abstract: NCP5388 elektronik DDR D 2689 ncp5387 NTMFS4833 pwm 3 phase west lake capacitors 0808 DAC dac 0808
    Text: DO NOT PRINT - TRIM AREA No-Latch, Dual-Edge Modulation Vcore Controllers for VR11.0 and VR10.X Applications DO NOT PRINT - TRIM AREA The NCP5387 and NCP5382 are multi-phase buck controllers which combine differential voltage and current sensing, and adaptive voltage


    Original     		PDF NCP5387 NCP5382 BRD8025-3 BRD8025/D ncp5215 NCP5388 elektronik DDR D 2689 NTMFS4833 pwm 3 phase west lake capacitors 0808 DAC dac 0808

    TV flyback transformer pinout

    Abstract: xbox schematic diagram xbox power supply schematic diagram ncp1207 smd transformer less power supply 12 volt 3A 600 volt mosfet TRANSISTOR SMD C22B SMD ZENER DIODE 26b NCP1337 TV flyback transformer
    Text: TND334/D Rev. 2, JUN − 2009 50 W Four−Output Internal Power Supply for Set Top Box Reference Design Documentation Package Semiconductor Components Industries, LLC, 2009 June, 2009 − Rev. 2 1 Publication Order Number: TND334/D Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes


    Original     		PDF TND334/D TV flyback transformer pinout xbox schematic diagram xbox power supply schematic diagram ncp1207 smd transformer less power supply 12 volt 3A 600 volt mosfet TRANSISTOR SMD C22B SMD ZENER DIODE 26b NCP1337 TV flyback transformer

    2N6284 inverter schematic diagram

    Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
    Text: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital


    Original     		PDF SG388/D 2N6284 inverter schematic diagram NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F

    STP4119

    Abstract: Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a
    Text: ON Semiconductor Master Components Selector Guide Power Management, Amplifiers and Comparators, Analog Switches, Thyristors, Diodes, Rectifiers, Bipolar Transistors, FETs, Circuit Protection, Clock and Data Management, Interface, and Standard Logic Devices


    Original     		PDF SG388/D May-2007 STP4119 Full-bridge SG3525 APPLICATION NOTES sg3525 application note mc34063 step up with mosfet mc34063 step down with mosfet Full-bridge SG3525 sg3525 pwm INVERTER MJ2955 300 watts amplifier circuit diagram MT3336 sg3535a