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NTE Electronics Inc NTE27 Transistor, bjt, pnp,45V V(Br)Ceo, to-3 \|Nte Electronics NTE27
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE27	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NTE Electronics Inc NTE271 Darlington Transistor, Pnp, -100V To-218; Transistor Polarity:Pnp; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V Rohs Compliant: Yes \|Nte Electronics NTE271
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE271	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	NTE271		51		1	1 $6.72 10 $4.368 100 $3.1362 1000 $3.1362 10000 $3.1362	Buy Now
Quest Components	NTE271		40			1 $9 10 $4.5 100 $4.5 1000 $4.5 10000 $4.5	Buy Now
TME	NTE271		16		1	1 $5.27 10 $4.19 100 $4.19 1000 $4.19 10000 $4.19	Buy Now
NTE Electronics Inc NTE272 Darlington Transistor, Npn, 40V; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:40V; Power Dissipation:1Wrohs Compliant: Yes \|Nte Electronics NTE272
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE272	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	NTE272		6			1 $29.1233 10 $29.1233 100 $29.1233 1000 $29.1233 10000 $29.1233	Buy Now
	NTE272		1			1 $30.6 10 $30.6 100 $30.6 1000 $30.6 10000 $30.6	Buy Now
TME	NTE272		12		1	1 $30.1 10 $25.2 100 $25.2 1000 $25.2 10000 $25.2	Buy Now
NTE Electronics Inc NTE278 Rf Transistor, Npn, 20V, 1.2Ghz; Transistor Polarity:Npn; Collector Emitter Voltage Max:20V; Transition Frequency:1.2Ghz; Power Dissipation:2.5W; Continuous Collector Current:400Ma; No. Of Pins:3Pins; Dc Current Gain Hfe Min:40Hfe Rohs Compliant: Yes \|Nte Electronics NTE278
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE278	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	NTE278	Bulk	10		1	1 $0.92 10 $0.92 100 $0.87 1000 $0.87 10000 $0.87	Buy Now
Onlinecomponents.com	NTE278		1,294			1 - 10 - 100 $1.494 1000 $0.925 10000 $0.866	Buy Now
Bristol Electronics	NTE278		5		2	1 - 10 $3 100 $3 1000 $3 10000 $3	Buy Now
Quest Components	NTE278		23			1 $1.2863 10 $1.1834 100 $1.029 1000 $1.029 10000 $1.029	Buy Now
	NTE278		4			1 $4 10 $3 100 $3 1000 $3 10000 $3	Buy Now
NTE Electronics Inc NTE270 Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Dc Current Gain Hfe Min:1000Hfe Rohs Compliant: Yes \|Nte Electronics NTE270
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTE270	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Onlinecomponents.com	NTE270		10			1 - 10 $4.84 100 $3.8 1000 $3.38 10000 $3.17	Buy Now
Bristol Electronics	NTE270		38		1	1 $6.72 10 $4.368 100 $3.36 1000 $3.36 10000 $3.36	Buy Now
Quest Components	NTE270		30			1 $9 10 $4.5 100 $4.5 1000 $4.5 10000 $4.5	Buy Now

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NTE27 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
NTE27	NTE Electronics	Germanium PNP Transistor	Original	PDF
NTE270	NTE Electronics	Silicon Complementary Transistor Darlington Power Amp, Switch	Original	PDF
NTE2708	NTE Electronics	Integrated Circuit NMOS, 8K UV EPROM, 450ns	Original	PDF
NTE271	NTE Electronics	Silicon Complementary Transistor Darlington Power Amp, Switch	Original	PDF
NTE2716	NTE Electronics	Integrated Circuit NMOS, 16K UV Erasable PROM	Original	PDF
NTE272	NTE Electronics	Silicon Darlington Complementary Power Amplifier	Original	PDF
NTE273	NTE Electronics	Silicon Darlington Complementary Power Amplifier	Original	PDF
NTE2732A	NTE Electronics	32K (4K x 8) NMOS UV Erasable PROM	Original	PDF
NTE274	NTE Electronics	Silicon Complementary Transistor Darlington Power Amp, Switch	Original	PDF
NTE275	NTE Electronics	Silicon Complementary Transistors Darlington Power Amplifier, Switch	Original	PDF
NTE2764	NTE Electronics	Integrated Circuit NMOS, 64K Erasable EPROM, 200ns	Original	PDF
NTE278	NTE Electronics	Silicon NPN Transistor Broadband RF Amp	Original	PDF

NTE27 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TO202N Abstract: NTE272 NTE273 ic 555 audio amplifiers Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.	Original	NTE272 NTE273 200mA 500mA NTE273 O202N TO202N NTE272 ic 555 audio amplifiers	PDF
Complementary Darlington Audio Power Amplifier Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555 Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.	Original	NTE272 NTE273 200mA 500mA NTE273 O202N Complementary Darlington Audio Power Amplifier PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 application note ic 555	PDF
Untitled Abstract: No abstract text available Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.	Original	NTE272 NTE273 200mA 500mA NTE273	PDF
NTE27C64-15D Abstract: nte27c64 Text: NTE27C64−15D Integrated Circuit 64 Kbit 8Kb x 8 UV EPROM Description: The NTE27C64−15D is a 64Kbit UV EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 8,192 by 8 bits. This device has a	Original	NTE27C64-15D NTE27C64-15D 64Kbit 28-Lead 100ns NTE27C64	PDF
NTE27C256-70D Abstract: NTE27C256-15D NTE27C256-12D Text: NTE27C256−12D, NTE27C256−15D, NTE27C256−15P, NTE27C256−70D Integrated Circuit 256 Kbit 32Kb x 8 EPROM Description: The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D,	Original	NTE27C256-12D, NTE27C256-15D, NTE27C256-15P, NTE27C256-70D NTE27C256 256Kbit 28-Lead NTE27C256-70D NTE27C256-15D NTE27C256-12D	PDF
NTE2708 Abstract: 1702 eprom 1702 eprom programmer 74LS Text: NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–	Original	NTE2708 450ns NTE2708 1702 eprom 1702 eprom programmer 74LS	PDF
Untitled Abstract: No abstract text available Text: NTE272 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)2 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25G h(FE) Max. Current gain.	Original	NTE272	PDF
Untitled Abstract: No abstract text available Text: NTE271 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1G h(FE) Max. Current gain.	Original	NTE271	PDF
Untitled Abstract: No abstract text available Text: NTE27C256−12D, NTE27C256−15D, NTE27C256−15P, NTE27C256−70D Integrated Circuit 256 Kbit 32Kb x 8 EPROM Description: The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D,	Original	NTE27C256â NTE27C256 256Kbit	PDF
NTE2732A Abstract: NTE3880 Nte388 Text: NTE2732A Integrated Circuit 32K 4K x 8 NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate	Original	NTE2732A NTE2732A 200ns, NTE3880. Note12. Note13. NTE3880 Nte388	PDF
NTE2716 Abstract: No abstract text available Text: NTE2716 Integrated Circuit NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384–bit 2048 x 8–bit Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows	Original	NTE2716 NTE2716 350ns	PDF
NTE270 Abstract: No abstract text available Text: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.	Original	NTE270 NTE271 NTE270	PDF
nte278 Abstract: No abstract text available Text: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:	Original	NTE278 200mA. 200MHz 1200MHz 360mA, 216MHz	PDF
NTE2764 Abstract: No abstract text available Text: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers	Original	NTE2764 200ns NTE2764 NTE2764s	PDF

Untitled Abstract: No abstract text available Text: NTE27 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)170 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)	Original	NTE27	PDF
Untitled Abstract: No abstract text available Text: NTE270 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1G h(FE) Max. Current gain.	Original	NTE270	PDF
Untitled Abstract: No abstract text available Text: NTE275 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)4 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.3GÂ h(FE) Max. Current gain.	Original	NTE275	PDF
germanium Power Transistor Abstract: Vcb-60V NTE27 Germanium power Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V	Original	NTE27 NTE27 germanium Power Transistor Vcb-60V Germanium power	PDF
nte278 Abstract: No abstract text available Text: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:	Original	NTE278 NTE278 200mA. 200MHz 1200MHz 216MHz	PDF
NTE2764 Abstract: No abstract text available Text: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers	Original	NTE2764 200ns NTE2764 NTE2764s	PDF
germanium Power Transistor Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power Text: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V	Original	NTE27 NTE27 germanium Power Transistor pnp germanium transistor germanium transistor pnp GERMANIUM TRANSISTOR Germanium power	PDF
Untitled Abstract: No abstract text available Text: NTE276 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)1.2k V(RRM) Max. (V) I(T) Rated Maximum (A)5.0² @Temp. (øC) (Test Condition) I(TSM) Max. (A)80 @ t(w) (s) (Test Condition) I(GT) Max. (A)120m V(GT) Max.(V)1.5 I(H) Max. (A) Holding Current300mÂ	Original	NTE276 Current300mÃ StyleTO-66 Code3-23	PDF
nte280 Abstract: nte291 Text: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280	OCR Scan	280MP NTE274) NTE281) NTE280 284MP 281MCP NTE291) 292MCP NTE292 NTE291 nte280 nte291	PDF
Untitled Abstract: No abstract text available Text: _ _ N T E ELECTRONICS T n C 17E" NMOS 32K UV EPROM. ZOOnS i . 24-LEAD DIP, SEE DIAG 300 . • ¿43155*1 GOQElflb MOS, 1400-BIT SERIAL EAROM, 2.0nS . . 14-LEAD DIP, SEE DIAG 247 NTE2764 NTE2800 ‘ U u ■ 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7	OCR Scan	1400-BIT 14-LEAD NTE2764 NTE2800 NTE2732A 200nS 28-LEAD 24-LEAD 40-LEAD NTE6502	PDF

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NTE27 Datasheets (12)

NTE27 Datasheets Context Search

TO202N

Complementary Darlington Audio Power Amplifier

Untitled

NTE27C64-15D

NTE27C256-70D

NTE2708

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NTE2732A

NTE2716

NTE270

nte278

NTE2764

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germanium Power Transistor

nte278

NTE2764

germanium Power Transistor

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nte280

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