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    NTMS4176PR2G Price and Stock

    onsemi NTMS4176PR2G

    MOSFET P-CH 30V 5.5A 8SOIC
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    NTMS4176PR2G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTMS4176PR2G On Semiconductor -30V, -9.6.A, P-CH, SO-8 Original PDF

    NTMS4176PR2G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AND8350

    Abstract: NTGS4141NT1G NTD4808N-1G NTMS4177PR2G ntsg4111pt1g poly switch fuse ntr4170nt1g NTD4815N-1G NTHS4166NT1G 5-A19
    Text: AND8350 eFuse Reverse Voltage Protection Prepared by: Alan Ball ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction the high side or an n-channel FET can be added in the low side. N-channel FETs are more cost effective and are normally preferred if it is acceptable to break the ground line. If the


    Original     		AND8350 AND8350/D AND8350 NTGS4141NT1G NTD4808N-1G NTMS4177PR2G ntsg4111pt1g poly switch fuse ntr4170nt1g NTD4815N-1G NTHS4166NT1G 5-A19 PDF

    4176P

    Abstract: NTMS4176PR2G NTMS4176P
    Text: NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăSOIC-8 Surface Mount Package Saves Board Space


    Original     		NTMS4176P NTMS4176P/D 4176P NTMS4176PR2G NTMS4176P PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMS4176P Power MOSFET -30 V, -9.6 A, P-Channel, SOIC-8 Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăSOIC-8 Surface Mount Package Saves Board Space


    Original     		NTMS4176P NTMS4176P/D PDF