Untitled
Abstract: No abstract text available
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Mbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
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bad block management in mlc nand
Abstract: No abstract text available
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
bad block management in mlc nand
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JESD97
Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area
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NAND16GW3C4B
16-Gbit
2112-byte
JESD97
NAND08GW3C2B
NAND16GW3C4B
16Gbit
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Untitled
Abstract: No abstract text available
Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area
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NAND16GW3C4B
16-Gbit
2112-byte
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64Gbit
Abstract: NAND64GW3D4A bad block management in mlc nand JESD97 package tsop48 NUMonyx NAND64G
Text: NAND64GW3D4A 64-Gbit 4 x 16 Gbits , two Chip Enable, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell (MLC) flash memory – 64 Gbits of memory array – 2 Gbits of spare area
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NAND64GW3D4A
64-Gbit
4224-byte
64Gbit
NAND64GW3D4A
bad block management in mlc nand
JESD97
package tsop48
NUMonyx NAND64G
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NAND32G
Abstract: 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash
Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area
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NAND32GW3D4A
32-Gbit
4224-byte
NAND32G
32-Gbit
nand32
NAND32GW3D4A
JESD97
NAND16GW3D2A
package tsop48
16 GBit flash
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Numonyx admux
Abstract: JZ58F0101M0Y0GE SCSP M18 JZ58F0085M0Y0GF numonyx nand flash Intel nor flash 1024-Mbit PSRAM Numonyx StrataFlash M18
Text: Numonyx StrataFlash Cellular Memory M18 M18 SCSP Family with Synchronous PSRAM, x16 Shared Bus, 10x10 PoP Ballout Datasheet Product Features Device Architecture — Flash Die Density: 512Mbit-1Gbit — PSRAM Die Density: 128-256Mbit
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10x10
512Mbit-1Gbit
128-256Mbit
104-Ball
512Mb
133Mhz
133Mhz
Numonyx admux
JZ58F0101M0Y0GE
SCSP M18
JZ58F0085M0Y0GF
numonyx nand flash
Intel nor flash
1024-Mbit
PSRAM
Numonyx StrataFlash M18
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LGA52
Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2A
NAND16GW3C4A
LGA52
LGA-52
NAND16GW3C4A
NAND08GW3C2A
16G nand
JESD97
NAND16GW3
NS4258
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PF38F4060M
Abstract: PF38F4060 Numonyx StrataFlash M18 2N 8904 PF38F4060M0Y0B BU 3150 PF48F6000M0Y0BE Numonyx admux PF48F4000M0Y0CE W250 A1A
Text: Numonyx StrataFlash Cellular Memory M18 Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous
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512-Mbit
16-bit
256-Kbyte
x32SH
x16SB
x16/x32
PF38F4060M
PF38F4060
Numonyx StrataFlash M18
2N 8904
PF38F4060M0Y0B
BU 3150
PF48F6000M0Y0BE
Numonyx admux
PF48F4000M0Y0CE
W250 A1A
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package tsop48
Abstract: LGA52 ai12472 nand flash lga NAND08GW3C2B LGA-52 NAND0
Text: NAND08GW3C2B 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 8 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage applications
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NAND08GW3C2B
2112-byte
TSOP48
LGA52
package tsop48
ai12472
nand flash lga
NAND08GW3C2B
LGA-52
NAND0
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LGA52
Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
Text: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage
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NAND08GW3C2B
NAND16GW3C4B
TSOP48
LGA52
LGA-52
ULGA52
nand 16g
16G nand flash
NAND08GW3C2B
NAND16GW3
NAND16GW3C4A
NAND16GW3C4B
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Untitled
Abstract: No abstract text available
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Kbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
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NAND04
Abstract: A15-A23
Text: NAND04GW3C2B NAND08GW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multiplane architecture, MLC NAND flash memories Preliminary Data Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area
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NAND04GW3C2B
NAND08GW3C2B
2112-byte
NAND04
A15-A23
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Untitled
Abstract: No abstract text available
Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous
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M18-90nm/65nm)
512-Mbit
16-bit
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WP1F
Abstract: No abstract text available
Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous
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M18-90nm/65nm)
512-Mbit
16-bit
x32SH
x16SB
x16/x32
8x10x1
PF48F3000M0Y0QE
WP1F
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PF38F4060M
Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous
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M18-90nm/65nm)
512-Mbit
16-bit
256-Kbyte
PF38F4060M
PF38F4060
PF48F3000M0Y0QE
PF48F6000
2N 8904
PF556
IC TOP 8901
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WP1F
Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous
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M18-90nm/65nm)
512-Mbit
16-bit
256-Kbyte
x32SH
x16SB
x16/x32
8x10x1
WP1F
BA8D11
PF38F4060
PF38F4060M
PF48F6000M0Y1
8S19
L18 65nm
PF48F3000M0Y0QE
x16C
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LGA52
Abstract: 4GW3 NAND08GW3C2B 2112B LGA-52 NAND04GW3C
Text: NANDxxGW3C2B 4-Gbit, 8-Gbit, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Features • High density multilevel cell MLC flash memory – 4, 8 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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2112-byte
TSOP48
LGA52
128yx
4GW3
NAND08GW3C2B
2112B
LGA-52
NAND04GW3C
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SM2682LT
Abstract: hynix micro SD card
Text: Zoom Family Mobile Storage SM2682LT Key Features SD Controller • - Supports 50MHz bus clock with 4-bit data width - Supports CPRM - Supports SDHC with a capacity of up to 32GB Overview The SM2682LT is one of the most advanced SD controllers developed by Silicon Motion, Inc., that
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SM2682LT
50MHz
SM2682LT
8/14-bit
48-pin
hynix micro SD card
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NAND16GW3D2A
Abstract: numonyx MLC NAND32GW3D4A
Text: NANDxxGW3DxA 16- or 32-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – Up to 32 Gbits of memory array – Up to 1 Gbit of spare area – Cost-effective solutions for mass storage
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32-Gbit,
4224-byte
NAND16GW3D2A
numonyx MLC
NAND32GW3D4A
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NAND16GW3D2A
Abstract: C5761 2112B
Text: NAND16GW3D2A 16-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage
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NAND16GW3D2A
16-Gbit,
4224-byte
NAND16GW3D2A
C5761
2112B
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SM2683EN
Abstract: Silicon Motion
Text: Zoom Family Mobile Storage SM2683EN Key Features SD Controller • - Supports 50MHz bus clock with 4-bit data width - Supports CPRM - Supports SDHC with a capacity of up to 32GB Overview The SM2683EN is one of the most advanced SD controllers developed by Silicon Motion, Inc., that
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SM2683EN
50MHz
SM2683EN
48-pin
Silicon Motion
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NAND16GW3D2A
Abstract: NAND32GW3D4A
Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage
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16-Gbit,
4224-byte
NAND16GW3D2A
NAND32GW3D4A
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NAND16GW3D2A
Abstract: NAND32GW3D4A NAND08GW3D2A
Text: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area
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NAND08GW3D2A
NAND16GW3D2A
16-Gbit,
4224-byte
16-Gbi"
NAND16GW3D2A
NAND32GW3D4A
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