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    cq837

    Abstract: No abstract text available
    Text: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36


    OCR Scan     		PDF 364080AS 364080ASG THM364080AS/ASG TC514100ASJ 364080ASG A0-A10 THM36408QAS THM364080AS THM364080ASG cq837

    KMM366S403BTN-G2

    Abstract: KMM366S403BTN-G0
    Text: KMM366S403BTN NEW JEDEC SDRAM MODULE KMM366S403BTN SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403BTN is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM366S403BTN KMM366S403BTN 4Mx64 400mil 168-pin DD373b2 KMM366S403BTN-G2 KMM366S403BTN-G0

    Untitled

    Abstract: No abstract text available
    Text: »HYUNDAI HYM536A414B M-Series 4M X 36-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM536A414B is a 4 M x 36-bit EDO mode CMOS DRAM module consisting of nineHV5117404B in 24/26 pin SOJ on a 72 pm glass-epoxy printed circuit board. O.inF and O.OlnF decoupling capacitor is mounted for each


    OCR Scan     		PDF HYM536A414B 36-bit nineHV5117404B HYM536A414BM/BSLM HYM536A414BMG/BSLMG A0-A10) DQ0-DQ35) 1CE16-10-APR96

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HYM5V72A414A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V17404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.22nFdecoupiing


    OCR Scan     		PDF HYM5V72A414A 72-bit HY51V17404A 22nFdecoupiing HYM5V72A414AKG/ATKG/ASLKG/ASLTKG 010TO nn47H 4b75Gfifl

    870Q

    Abstract: mrs 751
    Text: 144pin SDRAM SOD1MM KMM466S203CT KMM466S203CT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203CT is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM466S203CT KMM466S203CT 144pin 2Mx64 400mil 144-pin 870Q mrs 751

    Untitled

    Abstract: No abstract text available
    Text: » H Y U N D A I H Y M 5 V 7 2 A 4 0 4 A K -S e rie s Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION Tine HYM5V72A404A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V16404A in


    OCR Scan     		PDF 72-bit HYM5V72A404A HY51V16404A 2048bit 22nFdecoupling HYM5V72A404AKG/ATKG/ASLKG/ASLTKG 03g4/-o 331MIN. 1EC07-10-JAN96

    Untitled

    Abstract: No abstract text available
    Text: •H Y U N D A I HYM564414A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION H ie HYM564414A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF


    OCR Scan     		PDF HYM564414A 64-bit HY5117404A HYM564414AKG/ATKG/ASLKG/ASL7KG A0-A10) DQ0-DQ63) 1CE1S-10-APR96

    Untitled

    Abstract: No abstract text available
    Text: , ^ e . „ , ^ G M M 2644233D N T G 4,194,304 w ords x64bit SYNCHRONOUS DYNAMIC RAM MODULE L G o e m ic o n C o . , L t d . Description The GMM2644233DNTG is a 4M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 2M x 8bits Synchronous DRAMs in 44 pin TSOP II


    OCR Scan     		PDF 2644233D x64bit GMM2644233DNTG 64bits GMM2644233DNTG

    Untitled

    Abstract: No abstract text available
    Text: KMM5322000AV/AVG DRAM MODULES 2Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM532200QAV is a 2M bitsx32 Dynamic RAM high, density memory module. The Samsung KMM5322000AV consist of sixteen CMOS 1M x4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin


    OCR Scan     		PDF KMM5322000AV/AVG 2Mx32 KMM532200QAV bitsx32 KMM5322000AV 20-pin 72-pin KMM5322000AV- 150ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KM M 3 6 6 F 4 0 8 4 B S1 Unbuffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 L££TRt»ü£S DRAM MODULE KM M 3 6 6 F 4 0 ( 8 ) 4 B S1 Re v is io n H is to ry Version 0.0 (Dec. 1997) • R em oved tw o A C p aram eters t cacp (access tim e from C A S ) and


    OCR Scan     		PDF 4Mx64 4Mx16 KMM366F40 KMM366F404BS1 -KM416V4104BS KMM366F484BS1 -KM416V4004BS

    HYM540A100MG

    Abstract: No abstract text available
    Text: “H YUN D AI HYM540A100 M-Series 1M X 40-blt CMOS DRAM MODULE DESCRIPTION The HYM540A100 is a 1M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM540A100 40-blt 40-bit HY514400A HYM540A100M/LM HYM540A100MG/LMG 00Q3M3S 1CC06-01-FEB94 HYM540A100MG

    ADQ37

    Abstract: No abstract text available
    Text: KMM466F104BT1-L KMM466F124BT1-L DRAM MODULE KM M 466F104BT1-L & KMM466F124BT1-L EDO Mode 1M x 64 DRAM SODIMM using 1Mx16, 1K/4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F10 2 4BT-L is a 1Mx64bits Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM466F104BT1-L KMM466F124BT1-L 466F104BT1-L KMM466F124BT1-L 1Mx16, KMM466F10 1Mx64bits 1Mx16bits 400mil ADQ37

    Untitled

    Abstract: No abstract text available
    Text: HYM7V73AC801BTHGC 8Mx72, 8Mx8 based, PC133 DESCRIPTION The Hynix HYM7V73AC801B H-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, two 18bits driver ICs in 56pln TSSOP


    OCR Scan     		PDF HYM7V73AC801BTHGC 8Mx72, PC133 HYM7V73AC801B 8Mx72bits 400mil 54pin 18bits 56pln 24pin

    Untitled

    Abstract: No abstract text available
    Text: HYM7V65801BTFG 8Mx64, 8Mx8 based, PC100 DESCRIPTION The Hynix HVM7V65801B F-Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on


    OCR Scan     		PDF HYM7V65801BTFG 8Mx64, PC100 HVM7V65801B 8Mx64bits 400mil 54pin 168pin HYM7V65801B 64Mbytes