BUK9212-55B
Abstract: No abstract text available
Text: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK9212-55B
M3D300
OT428
BUK9212-55B
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BUK7212-55B
Abstract: No abstract text available
Text: BUK7212-55B TrenchMOS standard level FET Rev. 01 — 23 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK7212-55B
M3D300
OT428
BUK7212-55B
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BUK7211-55B
Abstract: 03nl03 03nl06
Text: BUK7211-55B TrenchMOS standard level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK7211-55B
M3D300
BUK7211-55B
OT428
03nl03
03nl06
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BUK9512-55B
Abstract: BUK9612-55B
Text: BUK95/9612-55B TrenchMOS logic level FET Rev. 01 — 28 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK95/9612-55B
BUK9512-55B
O-220AB)
BUK9612-55B
OT404
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PDF
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PSMN005-55B
Abstract: PSMN005-55P
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
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PSMN005-55B,
PSMN005-55P
PSMN005-55P
O220AB)
PSMN005-55B
OT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN005-55B, PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance
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PSMN005-55B,
PSMN005-55P
PSMN005-55P
O220AB)
PSMN005-55B
OT404
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PDF
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buk9l06-55b
Abstract: MBL370 buk9l06
Text: BUK9L06-55B TrenchMOS logic level FET Rev. 01 — 13 August 2002 Product data M3D794 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low
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BUK9L06-55B
M3D794
BUK9L06-55B
OT78C
O-220AB)
MBL370
buk9l06
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BUK9Y19-55B
Abstract: BUK9Y19-55B Rev. 02 BUK9Y19-55B,115
Text: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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Original
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BUK9Y19-55B
M3D748
OT669
BUK9Y19-55B
BUK9Y19-55B Rev. 02
BUK9Y19-55B,115
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BUK9Y40-55B
Abstract: 03np80
Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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Original
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BUK9Y40-55B
M3D748
OT669
BUK9Y40-55B
03np80
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK9212-55B TrenchMOS logic level FET Rev. 01 — 20 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very
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BUK9212-55B
M3D300
BUK9212-55B
OT428
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BUK754R0-55B
Abstract: BUK764R0-55B
Text: BUK75/764R0-55B TrenchMOS standard level FET Rev. 01 — 28 March 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.
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BUK75/764R0-55B
BUK754R0-55B
O-220AB)
BUK764R0-55B
OT404
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK75/764R0-55B TrenchMOS standard level FET Rev. 02 — 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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BUK75/764R0-55B
BUK754R0-55B
O-220AB)
BUK764R0-55B
OT404
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PDF
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7606
Abstract: 7606-55B BUK7506-55B BUK7606-55B
Text: BUK75/7606-55B TrenchMOS standard level FET Rev. 01 — 31 March 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK75/7606-55B
BUK7506-55B
O-220AB)
BUK7606-55B
OT404
7606
7606-55B
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55b diode
Abstract: 7607-55B BUK7507-55B BUK7607-55B
Text: BUK75/7607-55B TrenchMOS standard level FET Rev. 01 — 15 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK75/7607-55B
BUK7507-55B
O-220AB)
BUK7607-55B
OT404
55b diode
7607-55B
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D 795 A
Abstract: No abstract text available
Text: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low
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Original
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BUK95/96/9E06-55B
BUK9506-55B
O-220AB)
BUK9606-55B
OT404
BUK9E06-55B
OT226
D 795 A
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 01 — 13 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low
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Original
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BUK95/96/9E06-55B
BUK9506-55B
O-220AB)
BUK9606-55B
OT404
BUK9E06-55B
OT226
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PDF
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BUK954R2-55B
Abstract: BUK964R2-55B
Text: BUK95/964R2-55B TrenchMOS logic level FET Rev. 01 — 29 March 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK95/964R2-55B
BUK954R2-55B
O-220AB)
BUK964R2-55B
OT404
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PDF
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BUK9E08-55b
Abstract: BUK9508-55B BUK9608-55B
Text: BUK95/96/9E08-55B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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Original
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BUK95/96/9E08-55B
OT404,
OT226
BUK9E08-55b
BUK9508-55B
BUK9608-55B
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK95/964R2-55B TrenchMOS logic level FET Rev. 02 — 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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Original
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BUK95/964R2-55B
BUK954R2-55B
O-220AB)
BUK964R2-55B
OT404
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;
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PSMN005-55B;
PSMN005-55P
603502/300/04/pp12
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BUK9C10-55BIT
Abstract: No abstract text available
Text: D2 PA K-7 BUK9C10-55BIT N-channel TrenchPLUS logic level FET 6 August 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a D2PAK-7 package using TrenchPLUS MOSFET technology. The device includes TrenchPLUS current sensing and integrated diodes
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BUK9C10-55BIT
AEC-Q101
BUK9C10-55BIT
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FX609
Abstract: 2SK2437 2SJ362 2SJ417 FX203 HI-980
Text: SALIVO New Products Of New Package 5/6-pin XP Series :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power HOS FET series, and other device series.
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OCR Scan
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750nrn
FX203
FX609
HI980619IR
2SK2437
2SJ362
2SJ417
HI-980
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PDF
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Untitled
Abstract: No abstract text available
Text: 5A Adjustable Linear Regulator Description The CS-5205A-1 linear regulator provides 5A at an adjustable volt age w ith an accuracy of ±1%. Two external resistors are u se d to set the o u tp u t voltage w ithin a 1.25V to 13V range. The regulator is inten d ed for use as
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OCR Scan
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CS-5205A-1
O-220
O-220
CS-5205A-1T3
CS-5205A-1DP3
00D31Ã
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PDF
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OF TP 55B
Abstract: CS218-55B
Text: Datasheet ^ V B - — • CS218-55B CS218-55D CS218-55M CS218-55N CS218-55P CS218-55PB tm iiir ii i a c m lC llllD U C lO r C lIF P i 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SILICON CONTROLLED RECTIFIER 55 AMP, 200 THRU 1200 VOLTS
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OCR Scan
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cs218-55b
cs218-55d
cs218-55m
cs218-55n
cs218-55p
cs218-55pb
to-218
CS218-55B
CS218
OF TP 55B
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PDF
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