gis 110 kv
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9518-55
T0220AB
gis 110 kv
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other
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BUK110-50GL
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1101 transistor
Abstract: buk453
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK453-100A/B
BUK453
-100A
-100B
T0220AB
1101 transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK455-200A/B
BUK455
-200A
-200B
T0220AB
ONi25
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench' technology the device features very low on-state
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BUK9614-55
OT404
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET FEATURES PHP125N06LT, PHB125N06LT SYMBOL QUICK REFEREN CE DATA • ’T re n c h ’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics
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PHP125N06LT,
PHB125N06LT
oni25
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of PHP20N06E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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PHP20N06E
PHX15N06E
OT186A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHX3N50E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHX3N50E
OT186A
PHX3N50E
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BUK427-500B
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 25E D bbSBTEl 0050275 7 PowerMOS transistor BUK427-500A BUK427-500B T - 39-11 GENERAL DESCRIPTION SYMBOL ccn > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in
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BUK427-500A
BUK427-500B
BUK427
-500A
-500B
BUK427-500B
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transistor bo 244
Abstract: BUK454-450B T0220AB
Text: N AMER P H I L I P S / D I S C R E T E 2SE D • ^53=131 00204b5 PowerMOS transistor 1 ■ BUK454-450B r -3 7 - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK454-450B
T0220AB;
transistor bo 244
BUK454-450B
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK465-100A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in
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BUK465-100A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK437-500B
oni25
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 5SE D • bbS3T31 OOaablQ fl ■ PowerMOS transistor Fast Recovery Diode FET BUK655-450B T-31-/3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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bbS3T31
BUK655-450B
T-31-/3
oni25
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PDF
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BUK437-400A
Abstract: BUK437-400B
Text: N AMER SSE P H IL IP S /D IS C R E T E D b 1=53^ 31 Q D S031D S BUK437-400A BUK437-400B PowerMOS transistor T -3 7 -/S T Q U IC K REFER ENC E DATA G EN ER A L D ESC R IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK437
-400A
-400B
BUK437-400A
BUK437-400B
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GS 069 LF
Abstract: BUK437-400A BUK437-400B QDS031D 7648a
Text: N AMER P H I L I P S / D I S C R E T E SSE D bbSBTBl QDa031Q s BUK437-400A BUK437-400B PowerMOS transistor T-37-/5T G EN ER A L D ESC R IP TIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bSBT31
QDS031D
BUK437-400A
BUK437-400B
T-37-/5"
BUK437
-400A
-400B
OT-93;
GS 069 LF
7648a
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BUK457-500A
Abstract: BUK457-500B
Text: N AMER PHILIPS/D ISCR ETE SSE D • bbSBTBl 00S05SS 2 ■ PowerMOS transistor BUK457-500A BUK457-500B V -2 ? -l3 GENERAL DESCRIPTION SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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00S05SS
BUK457-500A
BUK457-500B
BUK457
-500A
-500B
T--39--13
BUK457-500B
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transistor D 716
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK482-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking
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BUK482-200A
OT223
oni25
transistor D 716
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EL 817 c337
Abstract: transistor c337 c337 transistor C337 W 61 DS4005
Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification
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BUK107-50DS
SC13a
BUK107-50
SCA54
137087/1200/02/pp12
EL 817 c337
transistor c337
c337 transistor
C337 W 61
DS4005
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