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    Untitled

    Abstract: No abstract text available
    Text: OPD3030 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY 1. Structure 1.1 Chip Size : 3.00mm X 3.00mm 1.2 Chip thickness : 400 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 160um X 160um 1.6 Active Area : 2.86mm X 2.86mm


    Original     		OPD3030 160um 160um 000Lux PDF

    OPD3030

    Abstract: ir10
    Text: OPD3030 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY unit : ㎛ 1. Structure 1.1 Chip Size : 3.00mm X 3.00mm 1.2 Chip thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 160um X 160um


    Original     		OPD3030 160um 160um 000Lux OPD3030 ir10 PDF