ic 8259
Abstract: OPB0642 opb064
Text: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode
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OPB0642
160um
000lux
2856K.
100uA
ic 8259
OPB0642
opb064
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Untitled
Abstract: No abstract text available
Text: OPD3030 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY 1. Structure 1.1 Chip Size : 3.00mm X 3.00mm 1.2 Chip thickness : 400 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 160um X 160um 1.6 Active Area : 2.86mm X 2.86mm
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OPD3030
160um
160um
000Lux
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Untitled
Abstract: No abstract text available
Text: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220 30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode
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OPB0642
160um
000lux
2856K.
100uA
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PDF
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OPD3030
Abstract: ir10
Text: OPD3030 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY unit : ㎛ 1. Structure 1.1 Chip Size : 3.00mm X 3.00mm 1.2 Chip thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 160um X 160um
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OPD3030
160um
160um
000Lux
OPD3030
ir10
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Asp1251
Abstract: J-STD-020 SAC305 land pattern for WLCSP RCN310 ASPIC320 ism Transceiver SAC305 reflow system in package SAC305 reflow csp IPD filter IPDiA filter
Text: Manual Handling recommendation These capacitors are designed to be mounted with a standard pick and place machine, with reflow. In case of manual handling, please follow below recommendations: x Minimize mechanical pressure on the capacitors use of a vacuum nozzle is recommended .
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100nF,
TD431111615116
Asp1251
J-STD-020 SAC305
land pattern for WLCSP
RCN310
ASPIC320
ism Transceiver
SAC305 reflow system in package
SAC305 reflow csp
IPD filter
IPDiA filter
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FMM5826X
Abstract: Ka-band ED-4701
Text: FMM5826X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 28 dBm Typ. •High Linear Gain; GL = 21 dB(Typ.) •Frequency Band ; 27.0 - 30.0 GHz •High Linearity ; OIP3 = 37dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5826X is a power amplifier MMIC that contains a threestage amplifier, internally matched, for standard communications
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FMM5826X
37dBm
FMM5826X
1906B,
Ka-band
ED-4701
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gl 9608
Abstract: No abstract text available
Text: FMM5820X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; Pout = 35.5 dBm Typ. •High Linear Gain; GL = 24 dB(Typ.) •Frequency Band ; 29.5 - 30.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5820X is a power amplifier MMIC that contains a fourstages amplifier, internally matched, for standard communications
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FMM5820X
FMM5820X
1906B,
gl 9608
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gs32
Abstract: Maruwa substrate amorphous head AS970 maruwa network resistor
Text: MARUWA GENERAL CATALOG ALUMINA SUBSTRATES [ Al2O3 ] The Alumina substrates are produced under severe quality control with carefully selected high-purity Alumina materials that ensures stable quality and excellent characteristics. a Features State : Good smoothness/flatness with less porosity due to fine particles. Excellent in adhesion with thick/thin film materials.
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110160m
Max430m
gs32
Maruwa substrate
amorphous head
AS970
maruwa
network resistor
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sem 5025
Abstract: gs 31 thermal printer head Al2O3 HA-96-2 AS970 amorphous head laser cutting circuit drilling machine applications
Text: アルミナ基板〔Al2O3〕 ALUMINA SUBSTRATES [ Al2O3 ] The Alumina substrates are produced under severe quality control with carefully selected high-purity Alumina materials that ensures stable quality and excellent characteristics. 回路部品 CIRCUIT CERAMICS
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ZENER Vr 3V
Abstract: Zener Diode 3v zener- diode WT-Z111N
Text: WT-Z111N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z111N 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z111N
160um)
ZENER Vr 3V
Zener Diode 3v
zener- diode
WT-Z111N
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Untitled
Abstract: No abstract text available
Text: Yellow Green LED Chip OPA5615H GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition
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OPA5615H
13mil
13mil
14mil
14mil
160um
11mil
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PDF
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32 v dc 1500ma
Abstract: ka-band amplifier ED-4701 FMM5820X EIAJ ED-4701 305 chip 7490 power amplifier mmic gl 9608
Text: FMM5820X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; Pout = 35.5 dBm Typ. •High Linear Gain; GL = 24 dB(Typ.) •Frequency Band ; 29.5 - 30.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5820X is a power amplifier MMIC that contains a fourstages amplifier, internally matched, for standard communications
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FMM5820X
FMM5820X
1906B,
32 v dc 1500ma
ka-band amplifier
ED-4701
EIAJ ED-4701 305
chip 7490
power amplifier mmic
gl 9608
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PDF
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ac-rx
Abstract: MTU410
Text: MYSON TECHNOLOGY MTU410 4-Bit Micro-Controller with LCD Driver, 1K Word FEATURES • • • • • • • • • • • • • • • • • • • Very low current dissipation. Wide operating voltage range. Supports both Ag and Li batteries. Powerful instruction set.
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MTU410
PH11-15
MTU410
ac-rx
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FMM5709X
Abstract: ka band lna FMM5709 ED-4701 ka band mmic ka band lna satellite
Text: FMM5709X K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 2.5dB Typ. @ f=30GHz ・High Associated Gain : Gas = 23dB ( Typ.) @f=30GHz ・Broad Band : 17.5 ~ 32GHz ・High Output Power : P1dB = 12.5dBm ( Typ. ) @f=30GHz ・Impedance Matched Zin/Zout = 50Ω
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FMM5709X
30GHz
32GHz
FMM5709X
RECOMMEN504888
ka band lna
FMM5709
ED-4701
ka band mmic
ka band lna satellite
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EMM5834X
Abstract: 7313 28 pin pin diagram of 8355 04482 an 7073 Eudyna Devices X BAND power amplifiers ED-4701 1380um
Text: EMM5834X Ku / K-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 26 dBm Typ. •High Gain; G1dB = 23 dB(Typ.) •Wide Frequency Band ; 12.7 - 27.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5834X is a wide band power amplifier MMIC that
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EMM5834X
EMM5834X
1906B,
7313 28 pin
pin diagram of 8355
04482
an 7073
Eudyna Devices X BAND power amplifiers
ED-4701
1380um
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FMM5063X
Abstract: "ku band" amplifier Eudyna Devices power amplifiers 5KW* GHZ ED-4701
Text: FMM5063X Ku-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.0 dBm Typ. •High Linear Gain; GL = 30 dB(Typ) •Wide Frequency Band : 12.75 - 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5063X is a power amplifier MMIC that contains a three
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FMM5063X
FMM5063X
1906B,
"ku band" amplifier
Eudyna Devices power amplifiers
5KW* GHZ
ED-4701
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PDF
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EMM5075
Abstract: No abstract text available
Text: EMM5075X Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 12.7~15.4GHz Impedance Matched Zin/Zout=50 DESCRIPTION The EMM5075X is a MMIC amplifier that contains a three-stages amplifier, internally matched, for standard communications band in the
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EMM5075X
EMM5075X
EMM5075
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Untitled
Abstract: No abstract text available
Text: OPA5615N Yellow Green LED Chip GaP/GaP N Side-Up 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (P Type) (N/P Type) Symbol Min Forward Voltage Typ
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OPA5615N
13mil
13mil
14mil
14mil
160um
11mil
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PDF
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Untitled
Abstract: No abstract text available
Text: FMM5063X Ku-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.0 dBm Typ. •High Linear Gain; GL = 30 dB(Typ) •Wide Frequency Band : 12.75 - 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5063X is a power amplifier MMIC that contains a three
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FMM5063X
FMM5063X
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PDF
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Untitled
Abstract: No abstract text available
Text: ES/EMM5075X Preliminary Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 12.7~15.4GHz Impedance Matched Zin/Zout=50 ✁ DESCRIPTION The ES/EMM5075X is a MMIC amplifier that contains a three-stage
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ES/EMM5075X
ES/EMM5075X
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FANUC POWER SUPPLY
Abstract: AC200 B360 C360 PV20 air bearing convex lens
Text: ナノの世界を開拓する超精密ナノ加工機 Super nano machine exploring nano field 加工事例 Samples mROBONANO α-0iBによる多彩な加工事例をご紹介します。 （ここに紹介するサンプルの精度は加工条件、材質、工具等に依存しますので、保証するものではありません。）
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0500mm/min
500mgf
R41mm
R45mm
FANUC POWER SUPPLY
AC200
B360
C360
PV20
air bearing
convex lens
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PDF
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DBM28
Abstract: ED-4701 FMM5823X power amplifier mmic
Text: FMM5823X K-Band Power Amplifier MMIC FEATURES •High Output Power: P1dB = 27~29 dBm Typ. •High Linear Gain: GL = 19 dB(Typ.) •Frequency Band: 17.7 - 27.0 GHz •High Linearity: OIP3 = 36.5dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5823X is a power amplifier MMIC that contains a four
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FMM5823X
FMM5823X
1906B,
DBM28
ED-4701
power amplifier mmic
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PDF
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14MIL
Abstract: No abstract text available
Text: Yellow Green LED Chip OPA5615H GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition
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OPA5615H
13mil
13mil
14mil
14mil
160um
11mil
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PDF
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Untitled
Abstract: No abstract text available
Text: 1C Foundry Facilities/Capabilities Features • MBE and Ion Implant Technologies • Three Optimized Processes HI2 - Low N oise/H igh Efficiency SI1 - Switch/Low Loss PE3 - Pow er/H igh Efficiency • Power and Low Noise On a Single Wafer • Design Service Available
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OCR Scan
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MIL-883
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PDF
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