Untitled
Abstract: No abstract text available
Text: !"#$%&' 123333333333333333333333333333333 QUs !"#$%&'( *+,-./012 !"#$%&'()*+,-./0123 !" #$%&"'()*+,-./0123 !"#$%&' !()*+,-./01 !"#$%&'()*+,-. /01234 !"#$%&'()*+,-. !"#$%& '()*+,-./01 !"#$%& !"#'()*+,-./-0 !"#$%&'()*+ !"#$%,!"#$%&'()*+,-./012034 !"#$ %&'() *+(),-".'/
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IAM48
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b617
Abstract: b649 b605 transistor b647 B647 b649 transistor transistor b647 bb pressure sensor circuit transistor B633 b63e
Text: Signal Acquisition and Conditioning With Low Supply Voltages SLAA018 August 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
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SLAA018
TMS7000
MC68HC11
TLV1543
b617
b649
b605
transistor b647
B647
b649 transistor
transistor b647 bb
pressure sensor circuit
transistor B633
b63e
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5V68
Abstract: LO301 558880
Text: Catalog 65701 PC Card Connectors Revised 9-95 Receptacle Assembly, Straddle-Mount, Centered 68 Positions Part Number 146233-1 Material and Finish: Housing -Glass-filled liquid crystal polymer, black Contacts -Beryllium copper; duplex plated 0.00076 [.0000301 minimum gold
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I-800-522-6752.
5V68
LO301
558880
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1492-1
Abstract: DS1206 DS1290 DS1291 DS1292 DS1293 DS129X DIP switch
Text: DS129x DALLAS SEMICONDUCTOR DS129x Eliminator PIN ASSIGNMENT FEATURES • Replaces 8 or 16 hard-to-get-at manual switches GND2 [ 1 24 □ GND3 8 1 24| T [ 2 23 □ VCC T H 2 23Ì Dl [ 3 22 P OA Dl H 3 22| OA OQ c 4 21 d OB OQ Ë4 21a OB OO [ 5 20 □ OC OO
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DS129X
DS1206
DS1290
DS1292
DS1291
DS1293
DS1292
DS129x
1492-1
DIP switch
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PD4516821G5
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-454AC724 4 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC724 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M SDRAM : /¿PD4516821 are assembled.
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MC-454AC724
72-BIT
MC-454AC724
uPD4516821
MC-454AC7|
PD4516821G5
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15PA90-6W
Abstract: 64AT21-3D MIL-PRF-8805 TL-10632 TS-10013
Text: 4 F 0 - 5511 2 - A HONEYWELL PART NUMBER 3 2 À . REV DO C U M E N T 14 0012331 C H A N G E D BY KSR CHECK 07APR05 AK 6 4 A T 2 1 S E R IE S C H A R T 2 D — OPPOSITE KEY FAA-PMA CATALOG KEYWAY POSITION CENTER POSITION WAY POSITION APPROVED LISTING A ¿ÈS C-NC C -N O C- NO C - N C C-NC C- NO
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5112-A
07APR05
64AT21
01MAR85
05MAR85
5M-1994
15PA90-6W
64AT21-3D
MIL-PRF-8805
TL-10632
TS-10013
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Untitled
Abstract: No abstract text available
Text: IBM21S862 Preliminary IBM21S860 IBM21S861 IBM 1394a 400Mb/s Physical Layer Transceiver PHY Features • Complies with IEEE-1394-1995 [1 ] and the P1394a Supplement, version 2.0 [2], • 400Mb/s max data rate; interoperable with 100 & 200Mb/s devices • Available with one, two, or three ports
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IBM21S862
IBM21S860
IBM21S861
1394a
400Mb/s
IEEE-1394-1995
P1394a
200Mb/s
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-452AB644 2M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-452AB644 is a 2,097,152 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 16 M SDRAM : ,uPD4516821 are assembled.
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MC-452AB644
64-BIT
MC-452AB644
uPD4516821
MC-452AB644-A
ntL44
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458CA724 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64 M S D R A M : //PD4564841 are assembled.
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MC-458CA724
72-BIT
MC-458CA724
uPD4564841
0i002
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MSM51V18165A
Abstract: MSM51V18165
Text: O K I Semiconductor M SM 51V18165A_ 1,048,576-Ward x 16-Blt DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165A is a 1,048¿76-w ord x 16-bit dynam ic RAM fabricated in O KI’s CM OS silicon gate technology. The M SM 51V18165A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CM OS. The M SM 51V18165A is
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MSM51V18165A
576-Word
16-Btt
MSM51V18165A
16-bit
42-pin
/44-pin
MSM51V18165
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RL5E821
Abstract: No abstract text available
Text: RL5E821 - CL Rf [Mohml 1 FCR33.86M2G Udd= 3.3 [U1 Fig.cTd Ta- 20 [d eg] Q- 0 T y p ic a l a. UIH/U1L EU] - - : b. - - inn 2.1 U1H % — UIL -i i i U2H/U2L EU] ivnu cn H U V V 1 •c i I i ini “ *? 1L 1 1 c. F osc [ / ] I 1 .4 .4 - 0- -0
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RL5E821
FCR33
86M2G
osci11
RL5E82I
86M2G
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MO40
Abstract: A02G FUEGO-218 QR114 LPT02 U409C emcp Movita
Text: CO CD cn 4^! g o m c_uj? tf *-* 1* t* t ro Ò \ r , .; V^-/p -a*-' • o, *r ' y. CJ — -•> V ô V \\:' O J T f " j C ""\ \ ,.X '. I i: '; : »_ ; ö 7 4 2 3 *v J/0 f*GA &«.»«' C*v. cjue H h — ih wf a u * JXt> cs* O lx C J ii UUU tuF C»tN UVJ o /»
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TQ401
ber21
630ST
-630S
MO40
A02G
FUEGO-218
QR114
LPT02
U409C
emcp
Movita
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ATS 1144
Abstract: No abstract text available
Text: MITSUBISHI {DGTL LOGIO 11 De| tSMIöa? ODISSM 8 I a>/ MITSUBISHI ALSTTLs 0 ^ 3 ^ M 74A LS S 21P 7 * y s - / 7 8 -B IT M AG NITU DE COMPARATOR | t'o 's e » """ so'*'6 6 2 4 9 8 2 7 M IT S U B IS H I <DG TL 9 1 D L O G IC DESCRIPTION The M 74ALS521P is a sem iconductor integrated circuit
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74ALS521P
16P2P
16-PIN
150mil
T-90-20
20P2V
300mil
ATS 1144
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDU CT OR INC blllSMT DDOTflQl T7T • PIRN b7E D PRELIMINARY MICRON ■ M T4LC 16270 256Kx 16 WIDE DRAM SEMICONDUCTOR. INC. WIDE DRAM 2 5 6 KX 1 6 DRAM 3.3V EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply*
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256Kx
500mW
512-cycle
MT4LC16270
CYCLE24
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D015
Abstract: MSM51V16165A
Text: O K I Semiconductor MSM5 1 V1 6 1 6 5 A 1,048,576-Word x 16-Bit D YN A M IC R A M : FAST PAGE M O D E TYPE WITH EDO DESCRIPTION The MSM51V16165A is a 1,048376-word x 16-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The MSM51V16165A achieves high integration, high-speed operation, and lowpower consum ption due to quadruple polysilicon double m etal CM O S. The MSM51V16165A is
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MSM51V16165A_
576-Word
16-Bit
MSM51V16165A
048376-word
42-pin
50/44-pin
D015
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D7118D
Abstract: D5114D
Text: jf M OTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal D-Type Latch w ith 3 -S ta te O utput M C 74VH C T373A The MC74VHCT373A is an advanced high speed CMOS octal latch with 3-state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while
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MC74VHCT373A
4-32-i,
MC74VHCT373A/D
D7118D
D5114D
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Untitled
Abstract: No abstract text available
Text: MACH 5 CPLD Family BEY O N D PER FO RM AN C E F ifth G e n e r a t i o n M A C H A r c h i t e l i . . ^ FEATURES P u b lic atio n # 2 0 4 4 6 A m e n d m e n t/0 Rev: G Issu e D ate: N o v e m b e r 1 9 9 8 MACH Families ♦ High logic densities and l/Os for increased logic integration
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LV-512/256-7AC-10AI.
M5LV-256/68
M5A3-256/68
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Untitled
Abstract: No abstract text available
Text: IN T E O R A T E D C IR C U IT S UC1526A UC2526A UC3526A UNITRODE Regulating Pulse Width Modulator FEATURES DESCRIPTION • Reduced Supply Current • Oscillator Frequency to 600kHz • Precision Band-Gap Reference • 7 to 35V Operation • Dual 200mA Source/Sink Outputs
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UC1526A
UC2526A
UC3526A
600kHz
200mA
UC1526A
100mV
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D010
Abstract: D016 MSM51V18160 MSM51V18160A msm5116160a msm5118160a msm51v16160a
Text: O K I Sem iconductor MSM5 1 V18160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM 51V 18160A is a 1,048,576-w ord x 16-bit D y n a m ic R A M fab ricated in O K I's C M O S silicon g a te tech n ology. T he M SM 51V 18160A ach ieve h igh in tegration, h ig h -sp e e d o p eratio n , an d low -pow er
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MSM51V18160A
576-Word
16-Bit
MSM51V18160A
42-pin
50/44-pin
D010
D016
MSM51V18160
msm5116160a
msm5118160a
msm51v16160a
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Untitled
Abstract: No abstract text available
Text: 1I S 8 K J F P CY7C1021 YJl xP 1 RiXJjEkw/i^ F ^ _ — 64K x 16 Static RAM BLE is LOW, then data from I/O pins (l/0 1 through l/0 8), is written into the location specified on the address pins (A0 through A i5). If byte high enable (BHE) is LOW, then data from
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CY7C1021
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TO206AB
Abstract: case 60-01
Text: MOTOROLA SC XSTRS/R F 4bE D b 3 b 72 54 0CH250S 5 «flO Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA DM0 Discrete Military Products NPN Silicon Sm all-Signal Transistor M M 4239 Suffixes: HX, H X V /////// Processed per MIL-S-19500/xxx d e s ig n e d for g e n e ra l-p u rp o se sw itc h in g an d am p lifie r ap p lica tion s
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0CH250S
MIL-S-19500/xxx
O-116)
TO206AB
case 60-01
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Untitled
Abstract: No abstract text available
Text: Technical Information OKI Semiconductor MSM5432256/MSM54V32256 Standard-version ( Low voltage version o r V-voraion) 262,144 Words x 32 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416257 is a high speed 256KX32 configuration burst access memory for high performance
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MSM5432256/MSM54V32256
MSM5416257
256KX32
MSM5432256
2424D
DQ8-15
DQ16-23
DQ24-31
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Untitled
Abstract: No abstract text available
Text: BR93LL46F 6 4 x 1 6 bit serial EEPROM The BR93LL46F is a CMOS serial input/output-type memory circuit EEPROM that can be programmed electrically. It can store up to 1024 bits in 64 sixteen-bit words. Each word can be accessed separately. Dimensions (Units : mm)
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BR93LL46F
BR93LL46F
0012m
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TMS44460DJ
Abstract: No abstract text available
Text: TM124MBK36B, TM124MBK36R1048576 BY 36-BIT TM248NBK36B, TM248NBK36R 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS137E-JANUARY 1991 -REVISEDJUNE 1995 Organization TM124MBK36B . . . 1 048 576 x 36 TM248NBK36B . . . 2 097 152 x 36 Single 5-V Power Supply ±10% Tolerance
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TM124MBK36B,
TM124MBK36R1048576
36-BIT
TM248NBK36B,
TM248NBK36R
SMMS137E-JANUARY
TM124MBK36B
TM248NBK36B
72-pin
TMS44460DJ
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