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    N-Channel Depletion-Mode MOSFET

    Abstract: normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet
    Text: AN901 Siliconix DepletionĆMode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction MOSFET may also perform in the enhancementĆmode. The nĆchannel enhancementĆmode MOSFET Figure 1c , requires a positiveĆpolarity gate voltage


    Original     		PDF AN901 ND2012 ND2406 2N692) N-Channel Depletion-Mode MOSFET normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet

    N-Channel Depletion-Mode MOSFET

    Abstract: P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering depletion p mosfet n mosfet depletion
    Text: AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the


    Original     		PDF AN901 ND2012 ND2406 2N692) 21-Jun-94 N-Channel Depletion-Mode MOSFET P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering depletion p mosfet n mosfet depletion

    SMP30N10

    Abstract: MOSPOWER Design 1983 bipolar transistor tester MOSPOWER Design Data Book 1983 AN601 uis test siliconix FET DESIGN US ARMY TRANSISTOR CROSS SILICONIX avalanche mode transistor 5510E UIS tester
    Text: AN601 Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand


    Original     		PDF AN601 15-Feb-94 SMP30N10 MOSPOWER Design 1983 bipolar transistor tester MOSPOWER Design Data Book 1983 AN601 uis test siliconix FET DESIGN US ARMY TRANSISTOR CROSS SILICONIX avalanche mode transistor 5510E UIS tester

    5510E UIS tester

    Abstract: bipolar transistor tester US ARMY TRANSISTOR CROSS SILICONIX AN601 SMP30N10 oxner siliconix an601
    Text: AN601 Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand


    Original     		PDF AN601 15-Feb-94 5510E UIS tester bipolar transistor tester US ARMY TRANSISTOR CROSS SILICONIX AN601 SMP30N10 oxner siliconix an601

    2n7000 complement

    Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
    Text: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put


    Original     		PDF AN804 VP0300L O226AA VN0300L TP0610L 2N7000 VP2020L 2n7000 complement VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610

    HC-49/pspice model

    Abstract: J111 spice model U310 spice model jfet spice model GASFET 2n4416 SST310 spice model J176 2n4391 spice U310
    Text: AN104 SPICE Parameters for Select JFETs Ed Oxner The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET.


    Original     		PDF AN104 SST176 2N5116 01-Sep HC-49/pspice model J111 spice model U310 spice model jfet spice model GASFET 2n4416 SST310 spice model J176 2n4391 spice U310

    AN601

    Abstract: SMP30N10 john worman bipolar transistor tester
    Text: AN601 Siliconix Unclamped Inductive Switching Rugged MOSFETs for Rugged Environments Ed Oxner and Philip A. Dunning The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand


    Original     		PDF AN601 ED-29, HDL-TR-1978 AN601 SMP30N10 john worman bipolar transistor tester

    an104 siliconix

    Abstract: TO-226A U421 jfet Siliconix AN104 jfet spice model SST310 spice model SILICONIX 2N4391 2N4391 J111 J176
    Text: AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET.


    Original     		PDF AN104 2N5116 SST176 an104 siliconix TO-226A U421 jfet Siliconix AN104 jfet spice model SST310 spice model SILICONIX 2N4391 2N4391 J111 J176

    FET pair n-channel p-channel

    Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
    Text: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to


    Original     		PDF AN804 21-Jun-94 VP0300L O-226AA VN0300L TP0610L 2N7000 FET pair n-channel p-channel FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent

    dv4 mosfets

    Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
    Text: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its


    Original     		PDF AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036

    APT-0403

    Abstract: APT50M70B2LL APT9302 jfet 400V depletion Severns N-Channel jfet 400V depletion dodge APT0103 N-Channel jfet 500V depletion APT0002
    Text: Application Note APT-0403 Rev B March 2, 2006 Power MOSFET Tutorial Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 Introduction drain-source voltage is supported by the reverse biased


    Original     		PDF APT-0403 APT0002, APT9302, APT0103, APT50M70B2LL APT9302 jfet 400V depletion Severns N-Channel jfet 400V depletion dodge APT0103 N-Channel jfet 500V depletion APT0002

    70572

    Abstract: bipolar transistor tester SMP30N10 "Integrated Technology corporation" AN601 RPKC MOSPOWER Design Data Book 1983 uis test
    Text: AN601 Vishay Siliconix Unclamped Inductive Switching Rugged MOSFETs For Rugged Environments The evolution of the power MOSFET has resulted in a very rugged transistor. The semiconductor industry defines this ruggedness as the capability to withstand avalanche currents


    Original     		PDF AN601 15-Feb-94 70572 bipolar transistor tester SMP30N10 "Integrated Technology corporation" AN601 RPKC MOSPOWER Design Data Book 1983 uis test

    AN-7501

    Abstract: CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240
    Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note eyrds terrpoon er ) OCI O frk geode setes VG = 9(4.5)V DRAIN CURRENT (ID) (A) bt witc g vems The FET 5 lt teve wer OST) utho The reduction in gate drive voltage is the result of halving the


    Original     		PDF 100nm AN-7501 CA3240E dv4 mosfets CA3280 RFM10N15 RFM10N15L RFM15N15 2N4036 P-channel 200V mos fet ca3240

    EPC-19 TRANSFORMER

    Abstract: AN9506 an9325 BAE-030D 500w Full bridge transformer ZVS phase-shift converters AHB ZVS 1/3 phase bridge fully controlled rectifier TDK Ferrite Core PC40 500W dc/dc converter pwm
    Text: Harris Semiconductor No. AN9506 Harris Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing


    Original     		PDF AN9506 500kHz, HIP4081A HIP4081A EPC-19 TRANSFORMER AN9506 an9325 BAE-030D 500w Full bridge transformer ZVS phase-shift converters AHB ZVS 1/3 phase bridge fully controlled rectifier TDK Ferrite Core PC40 500W dc/dc converter pwm

    EPC-19 TRANSFORMER

    Abstract: AHB ZVS AN9506 resonant single ended forward converter HIP4081 phase shifted full-bridge ZVS dc-dc converter 74ACT86 Full-bridge series resonant converter an9325 EPC TRANSFORMER
    Text: No. AN9506 Intersil Intelligent Power April 1995 A 50W, 500kHz, Full-Bridge, Phase-Shift, ZVS Isolated DC to DC Converter Using the HIP4081A Author: David J. Hamo Introduction ability to vary the turn-on delays of both upper and lower MOSFET switches. This is an essential feature for realizing


    Original     		PDF AN9506 500kHz, HIP4081A HIP4081A EPC-19 TRANSFORMER AHB ZVS AN9506 resonant single ended forward converter HIP4081 phase shifted full-bridge ZVS dc-dc converter 74ACT86 Full-bridge series resonant converter an9325 EPC TRANSFORMER

    POWER MOSFET APPLICATION NOTE

    Abstract: RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet
    Text: Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Application Note VG = 9 4.5 V VG = 5(2.5)V 6 4 VG = 4(2)V 2 The apparent conclusion from a study of the switching waveforms of the new device that halving the gate oxide thickness would double the gate capacitance and halve the switching


    Original     		PDF 100nm POWER MOSFET APPLICATION NOTE RFM10N15 2N4036 AN7254 CA3240E CA3280 RFM10N15L RFM15N15 vertical JFET high power pulse generator with mosfet

    schematic diagram welding inverter

    Abstract: Three phase inverter mosfet Diagram mosfet based power inverter project schematic diagram for welding inverter mosfet base induction heat circuit schematic diagram induction heating schematic diagram welding inverter control common schematic diagram welding inverter full bridge schematic diagram welding inverter control Power MosFet inverter schematic diagram
    Text: Hybrid Modules as an Alternative to Paralleled Discrete Devices Robin. L. Farruggia and Donald K. Morozowich Powerex, Inc. Youngwood, Pennsylvania 15697 Phone: 724 925-7272 FAX: (724) 925-4437 Email: rfarruggia@pwrx.com or dmorozowich@pwrx.com Abstract Mosfets are currently being used in an increasing number of applications, especially battery powered


    Original     		PDF

    FETs in Balanced Mixers Ed Oxner

    Abstract: ecom-2989 fet j310 FET U310 j310 fet relcom bt9 FETs in Mixers Ed Oxner fets in balanced mixers U310 fet oxner mixer diode
    Text: s Siliconix APPLICATION NOTE FETs in Balanced Mixers Ed Oxner INTRODUCTION Initial evaluation o f the active FET mixer will imply a dis­ advantage because o f local oscillator drive requirem ents; bipolar devices in low-level m ixers require very little drive


    OCR Scan     		PDF ECOM-2989, FETs in Balanced Mixers Ed Oxner ecom-2989 fet j310 FET U310 j310 fet relcom bt9 FETs in Mixers Ed Oxner fets in balanced mixers U310 fet oxner mixer diode

    siliconix FET DESIGN

    Abstract: FETs in Mixers Ed Oxner FET U310 Ed Oxner oscillator U310 Siliconix "fet" Ed Oxner siliconix DESIGN idea
    Text: DI73-2 DESIGN IDEA High-Performance FETs In Low-Noise VHF Oscillators Ed Oxner Most com m unications receivers are limited in their dynamic range because o f saturation in the early stages o f RF ampli­ fiers or mixers. However, some receiver designs are available which overcome this lim itation by using param etric amplifiers and


    OCR Scan     		PDF

    FET U310

    Abstract: uhf amplifier design U310 U310 fet siliconix FET DESIGN Ed Oxner fet 652 h siliconix DESIGN idea u310 siliconix siliconix fet
    Text: DI71-9 H S ilic o n ix DESIGN IDEA W ideband UHF Amplifier with H igh-Perform ance FETs Ed Oxner INTRODUCTION A new freedom in UHF amplifier design is possible with high-performance “Super FETs” such as the Siliconix U310 Junction FET. Typical advantages include a closely-matched


    OCR Scan     		PDF

    Granberg

    Abstract: AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Design of H. F. Wideband Power Transformers Building push-pull multioctave, VHF power amplifiers 300w amplifier rf power transformers
    Text: BUILDING PUSH-PULL, MULTIOCTAVE, VHF POWER AMPLIFIERS Prepared By H. ü. Granberg Motorola Semiconductor Products Sector Reprinted with permission of Microwaves & RF. November 1987 issue. 1987 Hayden Publishing Co. Inc., All rights reserved. MOTOROLA Semiconductor Products Inc.


    OCR Scan     		PDF AR305/D Granberg AR305 create uhf vhf tv matching transformer "Good RF Construction Practices and Techniques" Practical Wideband RF Power Transformers ar164 Design of H. F. Wideband Power Transformers Building push-pull multioctave, VHF power amplifiers 300w amplifier rf power transformers

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		PDF DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401