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    P-CHANNEL JFET RF Search Results

    P-CHANNEL JFET RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL JFET RF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    p channel JFET

    Abstract: MQ2N2608
    Text: ISCFdÈÅåi=Ååi= text/html About News Contact keyword search: Employment Site Home part number search: MQ2N2608 #75601 RFQ/Sample Package P Channel JFET Division Lawrence Datasheet lds-0004.doc Mil-Spec Shipping 295 (none) Qual Data Contact Microsemi


    Original     		MQ2N2608 lds-0004 p channel JFET MQ2N2608 PDF

    Application Notes

    Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
    Text: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the


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    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


    Original     		1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1 PDF

    NONLINEAR MODEL LDMOS

    Abstract: No abstract text available
    Text: Slide 1 Extracting RF Mosfet Spice Models MTT 1998 - Baltimore Md. by S. K. Leong Polyfet Rf Devices www.polyfet.com This presentation is available on our web site Slide 2 Why simulate? n n n n n n n Simulation - It’s the only way! Fast accurate results. What if analysis.


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    dv4 mosfets

    Abstract: C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 AN7254
    Text: Harris Semiconductor No. AN7254.2 Harris Power MOSFETs April 1994 Switching Waveforms Of The L2FET: A 5 Volt Gate-Drive Power MOSFET Author: C. Frank Wheatley, Jr. and Harold R. Ronan, Jr. gate sensitivity, as shown in Figures 1, 2, and 3, which are comparisons of the industry standard RFM10N15 with its


    Original     		AN7254 RFM10N15 RFM10N15L. dv4 mosfets C12 IC GATE CA3240E DEPLETION MOSFET Harris Semiconductor jfet mos die mosfet cross reference n channel depletion MOSFET 2N4036 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with


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    2N3797

    Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


    Original     		AN211A/D AN211A 2N3797 MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE PDF

    AN211A

    Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
    Text: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide


    Original     		AN211A/D AN211A AN211A MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola PDF

    MPF102 equivalent transistor

    Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
    Text: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or


    Original     		AN211A/D r14525 AN211A/D MPF102 equivalent transistor MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET PDF

    MPF102 JFET

    Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory


    Original     		AN211A/D AN211A MPF102 JFET motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet PDF

    matched pair JFET

    Abstract: N CHANNEL jfet Low Noise Audio Amplifier jfet differential transistor jfet having voltage gain 741 op-amp transistor jfet 741 opamp field effect transistors opamp 741 jfet idss 10 vp -6
    Text: APPLICATION NOTES JFETS P R E C I S I O N I N E L E C T R O N I C S An introduction to Junction Field Effect Transistors JFETs The Junction Field Effect Transistor (JFET) exhibits characteristics which often make it more suited to a particular application than the bipolar transistor.


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    Untitled

    Abstract: No abstract text available
    Text: p m MUX-16/MUX-28 D 16-CHANNEL/ DUAL 8-CHANNEL JFET ANALOG MULTIPLEXERS OVERVOLTAGE PROTECTED ii M o n o l i t h FEATURES GENERAL DESCRIPTION • JFET Switches Rather Than CMOS • Highly Resistant To Static Discharge Damage • No SCR Latch-up Problems


    OCR Scan     		MUX-16/MUX-28 16-CHANNEL/ 290OTypical MUX-16 DG506, HI-506A, AD7506 MUX-28 DGS07, HI-507A, PDF

    Untitled

    Abstract: No abstract text available
    Text: MUX-08/MUX-24 8-CHANNEL/DUAL 4-CHANNEL JFET ANALOG MULTIPLEXERS OVERVOLTAGE AND POWER SUPPLY LOSS PROTECTED P r e c is i o n M o n o lit h ic s In c . FEATURES • • • • • • • • • w ith low c ro ssta lk to sa tis fy a w id e va rie ty o f a p p lica tio n s.


    OCR Scan     		MUX-08/MUX-24 106dB 101dB MUX-08/MUX-24 PDF

    U350

    Abstract: Siliconix JFET Siliconix N-Channel JFETs TO99 package u350 siliconix
    Text: C T 'S ilic o n ix U350 JmÆ in c o r p o ra te d N-Channel JFET Ring Demodulator The U350 is a se t of fo u r m atched n-channel JFETs connected as a ring d em odulator. The m atched set of JFETs has low rDS ON , high gfs, and square law operation which gives high conversion gain and


    OCR Scan     		300ms U350 Siliconix JFET Siliconix N-Channel JFETs TO99 package u350 siliconix PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40M35JVR A dvanced P o w er Te c h n o l o g y 400V 93A 0.035Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT40M35JVR OT-227 PDF

    SOT-227 Package

    Abstract: No abstract text available
    Text: APT8015JVFR A dvanced P o w er Te c h n o lo g y 800V 44A 0.150^ POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT8015JVFR OT-227 APT8015JVFR MIL-STD-750 00A/HS, SOT-227 Package PDF

    Untitled

    Abstract: No abstract text available
    Text: APT8015JVR A dvanced P o w er Te c h n o l o g y ' soov 44a o.ison POWER MOS V M Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT8015JVR OT-227 MIL-STD-750 -25eC, OT-227 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M22LVR A DVAN CED P o w er Te c h n o lo g y 200V 100A 0.022Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V 'M


    OCR Scan     		APT20M22LVR O-264 APT20M22LVR MIL-STD-75Q 500tiH, O-264AA PDF

    Untitled

    Abstract: No abstract text available
    Text: C lr > A v C o ik A ^ A D n n . SPI 204 C o rp o ra tio n * SIGNAL PROCESSING EXCELLENCE HIGH I/O ANALOG ARRAY WITH JFETS DESCRIPTION The SPI 204 is a high density, high performance an alo g array containing 428 linear bipolar transistors and 16 P-channel JFET transistors as well


    OCR Scan     		SPI000 SPI204 MXOP02 MXOP03 MXCM01 PDF

    2N4117A NATIONAL SEMICONDUCTOR

    Abstract: National Semiconductor Discrete catalog PN4117A MMBF4119 2N4117A 2N4118 2N4118A MMBF4117 MMBF4118 NATIONAL SEMICONDUCTOR TO-92
    Text: bflE D • b S 0 1 1 3 0 □ □ 3 ciS0M 714 « N S C S JFET Ultra Low Input Current Amplifiers NATL S E M I C O N D D IS CR ET E N Channel V p @ V DS lD Device MMBF4117 BVgss (V) Min 40 % IfiSS (lunho) (V) <P*) Max (V) Min Max 10 0.6 2.8 10 2.8 10 (nA)


    OCR Scan     		bS01130 MMBF4117 O-236* PM4117 2N4118 MMBF4118 MMBF4119 2N4117A 2N4117A NATIONAL SEMICONDUCTOR National Semiconductor Discrete catalog PN4117A 2N4118A NATIONAL SEMICONDUCTOR TO-92 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M22JVFR A dvanced W 7Æ P o w e r Te c h n o l o g y 200V POWER MOSV 97A 0.022^ j FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		APT20M22JVFR OT-227 PDF

    U310

    Abstract: U309 U3011 U308 u-310 u308u310 j308-310
    Text: U 3 08-U 3 10 N-Channel JFET Q IM ïïÜ iD IL FEA T U R ES • is re la tiv e ly fla t o u t to 1 0 0 0 M H z. A p p lic a tio n s fo r these devices in m ilita r y , co m m ercia l and consum er c o m m u n ic a ­ tio n s e q u ip m e n t in clu d e lo w noise, high gain R F a m p lifie rs ,


    OCR Scan     		U308-U310 100MHz, 450MHz, 1000MHz. U310 U309 U3011 U308 u-310 u308u310 j308-310 PDF

    TL072 PIN DIAGRAM

    Abstract: tl072 TL072N tl072 equivalent Op Amp schematic "Replacement FOR " Raytheon tl072 cl tl072 output resistance TL072 JFET tl072 die
    Text: ?3 U V V .O O rtJ 006564 roduct^Specificatjons in e a rfo q g fitg friftuits f Q T L0 72 Raytheon Handle With Care TL072 Low Noise Dual J-Fet Operational Amplifier Description The TL072 series is designed to offer the designer a well matched high voltage JFET and


    OCR Scan     		TL072 18nV/\/Hz TL072, TL072A, TL072B, TL072 TL072 PIN DIAGRAM TL072N tl072 equivalent Op Amp schematic "Replacement FOR " Raytheon tl072 cl tl072 output resistance TL072 JFET tl072 die PDF

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan     		K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686 PDF