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    P-CHANNEL POWERTRENCH MOSFET Search Results

    P-CHANNEL POWERTRENCH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL POWERTRENCH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.


    Original     		FDW2508P PDF

    S237

    Abstract: 4925 B equivalent ic F63TNR F852 Si4925DY SOIC-16 SOIC-8 mosfet
    Text: January 2001 Si4925DY Dual P-Channel, Logic Level, PowerTrench MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		Si4925DY OT-23 S237 4925 B equivalent ic F63TNR F852 SOIC-16 SOIC-8 mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.


    Original     		FDW2508P PDF

    2508P

    Abstract: FDW2508P
    Text: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.


    Original     		FDW2508P 2508P FDW2508P PDF

    Si4925DY

    Abstract: S237 4925 B SOIC-16
    Text: January 2001 Si4925DY Dual P-Channel, Logic Level, PowerTrench MOSFET General Description Features These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the


    Original     		Si4925DY OT-23 S237 4925 B SOIC-16 PDF

    FDC658AP

    Abstract: Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A
    Text: FDC658AP Single P-Channel Logic Level PowerTrench MOSFET -30V, -4A, 50m: General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications.


    Original     		FDC658AP FDC658AP Single P-Channel, Logic Level, PowerTrench MOSFET marking I58 marking 58A PDF

    FDC6432SH

    Abstract: No abstract text available
    Text: FDC6432SH 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET General Description Features This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous


    Original     		FDC6432SH FDC6432SH PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V.


    Original     		Si3441DV PDF

    FDS6679AZ

    Abstract: No abstract text available
    Text: FDS6679AZ P-Channel PowerTrench MOSFET tm -30V, -13A, 9mΩ General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.


    Original     		FDS6679AZ FDS6679AZ PDF

    9435 fairchild

    Abstract: 9435 mosfet mosfet 9435 Si9435DY 9435 so8
    Text: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		Si9435DY 9435 fairchild 9435 mosfet mosfet 9435 9435 so8 PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS6609A FDS9953A L86Z
    Text: FDS6609A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		FDS6609A CBVK741B019 F011 F63TNR F852 FDS6609A FDS9953A L86Z PDF

    Si3441DV

    Abstract: No abstract text available
    Text: Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V.


    Original     		Si3441DV PDF

    CBVK741B019

    Abstract: F63TNR FDC604P FDC633N
    Text: FDC604P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		FDC604P CBVK741B019 F63TNR FDC604P FDC633N PDF

    FDS6609A

    Abstract: No abstract text available
    Text: FDS6609A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		FDS6609A FDS6609A PDF

    FDS6675BZ

    Abstract: No abstract text available
    Text: FDS6675BZ P-Channel PowerTrench MOSFET -30V, -11A, 13mΩ General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.


    Original     		FDS6675BZ FDS6675BZ PDF

    FDS6679AZ

    Abstract: No abstract text available
    Text: FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.


    Original     		FDS6679AZ FDS6679AZ PDF

    c3854

    Abstract: FDR8702H
    Text: FDR8702H 20V N & P-Channel PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet


    Original     		FDR8702H c3854 FDR8702H PDF

    Si3445DV

    Abstract: No abstract text available
    Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		Si3445DV PDF

    FDS*6609A

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: FDS6609A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		FDS6609A FDS*6609A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.


    Original     		Si3445DV PDF

    marking 606

    Abstract: diode marking EY
    Text: FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V.


    Original     		FDC606P FDC606P NF073 marking 606 diode marking EY PDF

    8 pin ic 9435

    Abstract: 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435
    Text: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		Si9435DY 8 pin ic 9435 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435 PDF

    marking 564

    Abstract: FDC5614P
    Text: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications


    Original     		FDC5614P FDC5614P NF073 marking 564 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS9933A Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified M O SFETsare produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to m inimize the


    OCR Scan     		FDS9933A PDF