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    P-MOSFET BSP Search Results

    P-MOSFET BSP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    P-MOSFET BSP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250

    optimos battery protection reverse

    Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
    Text: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the


    Original     		PDF FIN-02601 100P03P3L-04 P-TO220-3 P-TO262-3 P-TO252-3 P-TO263-3 O-263-7) P-TO263-7 P-TO220-7 optimos battery protection reverse 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package

    BC108 plastic

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 78 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–


    Original     		PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 plastic BC237

    BC237

    Abstract: 2N5486 characteristics
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455VT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 80 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–


    Original     		PDF MGSF3455VT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 2N5486 characteristics

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 80 mΩ (TYP)  Part of the GreenLine Portfolio of devices with energy–


    Original     		PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    Untitled

    Abstract: No abstract text available
    Text: BSP225 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)225m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)600m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)


    Original     		PDF BSP225

    Untitled

    Abstract: No abstract text available
    Text: BSP171 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)1.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)6.4 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)-55


    Original     		PDF BSP171

    Untitled

    Abstract: No abstract text available
    Text: BSP220 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)225m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)600m @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)


    Original     		PDF BSP220

    Untitled

    Abstract: No abstract text available
    Text: BSP317 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)370m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.48 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.8 Minimum Operating Temp (øC)-55


    Original     		PDF BSP317

    Untitled

    Abstract: No abstract text available
    Text: BSP316 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)650m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.8 Minimum Operating Temp (øC)-55


    Original     		PDF BSP316

    FC00380

    Abstract: optocoupler P 521 ac bridg specification 12v 50w smps TRANSISTOR BSP 2000 022Y c0035 VIPER50B TRANSISTOR 0835 FC00301
    Text: VIPer50B VIPer50BSP SMPS PRIMARY I.C. TYPE VIPer50B/BSP V DSS In R DS on 400 V 3A 2.2 Ω 10 1 PENTAWATT HV FEATURE • ADJUSTABLE SWITCHING FREQUENCY UP TO 200KHZ ■ CURRENT MODE CONTROL ■ SOFT START AND SHUT DOWN CONTROL ■ AUTOMATIC BURST MODE OPERATION IN


    Original     		PDF VIPer50B VIPer50BSP VIPer50B/BSP 200KHZ FC00380 optocoupler P 521 ac bridg specification 12v 50w smps TRANSISTOR BSP 2000 022Y c0035 VIPER50B TRANSISTOR 0835 FC00301

    BSP 125 equivalent

    Abstract: optocoupler Iso1 TRANSISTOR BSP 2000 TRANSISTOR BSP 0835
    Text: VIPer100B VIPer100BSP SMPS PRIMARY I.C. TYPE VIPer100B/BSP V DSS In R DS on 400V 6A 1.1 Ω 10 1 PENTAWATT HV FEATURE • ADJUSTABLE SWITCHING FREQUENCY UP TO 200KHZ ■ CURRENT MODE CONTROL ■ SOFT START AND SHUT DOWN CONTROL ■ AUTOMATIC BURST MODE OPERATION IN


    Original     		PDF VIPer100B VIPer100BSP VIPer100B/BSP 200KHZ BSP 125 equivalent optocoupler Iso1 TRANSISTOR BSP 2000 TRANSISTOR BSP 0835

    BSP 75N

    Abstract: BSP75N
    Text: Product Brief BTS 3207N HITFET Smar t Low-Side Power Switch One Channel 500 mΩ T H E B T S 3 2 0 7 N is a one channel low-side power switch. It has an on resistance of 500 mΩ. Basic Functions B T S 3 2 0 7 N and BSP 75N are both in the 500 mΩ area. BTS 3207N is specially for cost driven applications and fits especially


    Original     		PDF 3207N 3207N B152-H8629-X-X-7600 BSP 75N BSP75N

    Untitled

    Abstract: No abstract text available
    Text: BEE D • ¿123b32Q 00170^3 b « S I P T'3 SIPMOS P Channel MOSFET SIEMENS/ SPCL-, SEMICONDS BSP 92 _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcj = -240V • Continuous drain current / o = -0.18A • Draln-source on-resistance


    OCR Scan     		PDF 123b32Q -240V Q62702-S653 23b320 00170e

    Untitled

    Abstract: No abstract text available
    Text: 32E D m fl23b320 0017060 2 H S I P SIPMOS N Channel MOSFET f * ' 5*1 ^ BSP 89 SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIPMOS - enhancement mode • Draln-source voltage • Continuous drain current • Draln-source on-resistance • Total power dissipation


    OCR Scan     		PDF fl23b320 Q67002-S652 23b320 T-39-05

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 023b32Q OGIVIOÌ b « S I P SIPMOS N Channel MOSFET BSP 295 SIEMENS/ SPCL-. SEMICONDS T -g ì-O S ' _ Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vis = 50V • Continuous drain current I d = 1-7A • Drain-source on-resistance


    OCR Scan     		PDF 023b32Q Q67000-S066 T-39-05

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ö23b32ü 0017107 s m s i p BSP 149 SIPMOS N Channel MOSFET T - 3 *7 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current • Drain-source on-resistance • Total power dissipation Type M arking O rdering code for


    OCR Scan     		PDF 23b32Ã Q67000-S071 00A//Ã -100V 00A/MS

    Untitled

    Abstract: No abstract text available
    Text: BSP 92 SIPMOS P Channel MOSFET Preliminary Data • SIPMOS - enhancem ent m ode • D rain-source voltage Vfes = -240V • C ontin uou s drain current / D = -0.18A • D rain-source on-resistance ffcs on = 2 0 0 • Total pow er dissipation PD = 1.5W t Type


    OCR Scan     		PDF -240V Q62702-S653

    X780

    Abstract: No abstract text available
    Text: JVKJÏXAJVK 19-0125; Rev. 0; 4/93 Dual-Slot PCMCIA Analog P o w er C ontroller The M A X 780A in c o rp o ra te s tw o 0 V /+ 5 V /+ 1 2 V /h ig h im p ed a n ce pow er outputs for flash Vpp program m ing, level shifters for pow er MOSFET control of two se p a ­


    OCR Scan     		PDF AX780A AX780B 20-PIN X780

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Û23b32ü 00170=10 S H S I P SIPM O S N Channel MOSFET SIEMENS/ SPCL-, SEMICONDS T-21- é>5~ _ BSP 125 Preliminary Data • S IP M O S - enhancement mode • Drain-source voltage Vfes = 600V • Continuous drain current lB = .11OA • Drain-source on-resistance


    OCR Scan     		PDF 23b32Ã T-21- 62702-S654 S3b32Q T-39-05

    Untitled

    Abstract: No abstract text available
    Text: BSP 315 SIPMOS N Channel MOSFET • SIPMOS - enhancem ent m ode • D rain-source v olta ge Vbs = -50V • C ontin uou s drain current / D = -1.0A • D rain-source on-resistance • Total pow er dissipation fiosioio = .9 5 0 P,M = 1.5W Type M arking Ordering co de for


    OCR Scan     		PDF Q67000-S027

    T0252AA

    Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y


    OCR Scan     		PDF SI4465DY SI4965DY IRF7204 IRF7304 SI4963DY SI9430DY SI9435DY SI9933ADY SI9953DY IRF7205 T0252AA T0263 BSS83 IRFR5305 T0-220AB

    Untitled

    Abstract: No abstract text available
    Text: VZETIX SEMICONDUCTORS BSP75G 60V self-protected low-side IntelliFET MOSFET switch Summary Continuous drain source voltage V ds=60V On-state resistance 550m O Nominal load current 1.4A V|N = 5V Clamping energy 550mJ SOT223 Description Self-protected low side MOSFET. M onolithic over tem perature, over


    OCR Scan     		PDF BSP75G 550mJ OT223

    Untitled

    Abstract: No abstract text available
    Text: BEE D • Ö23b320 Q017124 2 ■ SIP SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS • • • • • BSP 315 T ~ 2 * 1 'O S ' SIPMOS - enhancement mode Drain-source voltage = -50V Continuous drain current l 0 - -1.0A Draln-souros on-reslstance Ros<on> = .9 5 0


    OCR Scan     		PDF 23b320 Q017124 Q6700Q-S027