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    P06P03LD Search Results

    P06P03LD Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P06P03LD Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF
    P06P03LDG Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF

    P06P03LD Datasheets Context Search

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    P06P03LDG

    Abstract: nikos P06P03 Field Effect Transistor p-Channel Logic Level Enhancement Mode niko-sem TO252 Niko Semiconductor sm 17 35 tc P06P03LD
    Text: P06P03LDG P-Channel Logic Level Enhancement NIKO-SEM Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P06P03LDG O-252 AUG-17-2004 P06P03LDG nikos P06P03 Field Effect Transistor p-Channel Logic Level Enhancement Mode niko-sem TO252 Niko Semiconductor sm 17 35 tc P06P03LD

    P06P03LD

    Abstract: P06P03 p-Channel Logic Level Enhancement Mode nikos niko-sem "Field Effect Transistor" nikosem
    Text: P-Channel Logic Level Enhancement NIKO-SEM P06P03LD Mode Field Effect Transistor TO-252 D PRODUCT SUMMARY V BR DSS RDS(ON) ID -30 45mΩ -12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P06P03LD O-252 OCT-12-2004 P06P03LD P06P03 p-Channel Logic Level Enhancement Mode nikos niko-sem "Field Effect Transistor" nikosem

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32405LA-S •General description ■Features ELM32405LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)


    Original     		PDF ELM32405LA-S ELM32405LA-S P06P03LDG O-252 AUG-17-2004

    P06P03

    Abstract: P06P03LDG P06P03LD
    Text: Single P-channel MOSFET ELM32405LA-S •General description ■Features ELM32405LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 45mΩ (Vgs=-10V) Rds(on) < 75mΩ (Vgs=-4.5V)


    Original     		PDF ELM32405LA-S ELM32405LA-S P06P03LDG O-252 AUG-17-2004 P06P03 P06P03LDG P06P03LD

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM32405LA-S •概要 ■特長 ELM32405LA-S は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-12A ・ Rds on < 45mΩ (Vgs=-10V) ・ Rds(on) < 75mΩ (Vgs=-4.5V)


    Original     		PDF ELM32405LA-S P06P03LDG O-252 AUG-17-2004

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    ELM32405LA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM32405LA-S •概要 ■特点 ELM32405LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-30V ·Id=-12A ·Rds on < 45mΩ (Vgs=-10V) ·Rds(on) < 75mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM32405LA-S P06P03LDG O-252 AUG-17-2004 ELM32405LA