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    P2703BAG Search Results

    P2703BAG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P2703BAG Niko Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

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    sem 2005

    Abstract: NIKO-SEM P2703BAG
    Text: D 30 RDS ON 27mΩ TSOP-6 Lead-Free D D 6 5 4 1 2 3 D D G PRODUCT SUMMARY V(BR)DSS P2703BAG N-Channel Logic Level Enhancement Mode Field Effect Transistor_Preliminary NIKO-SEM S 1. GATE 2. DRAIN 3. SOURCE ID G 7A S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PDF P2703BAG AUG-12-2005 sem 2005 NIKO-SEM P2703BAG

    ELM36400EA

    Abstract: No abstract text available
    Text: 单 N 沟道 MOSFET ELM36400EA-S •概要 ■特点 ELM36400EA-S 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=7A ·Rds on < 27mΩ (Vgs=10V) ·Rds(on) < 40mΩ (Vgs=4.5V) ■绝对最大额定值 项目


    Original     		PDF ELM36400EA-S AUG-12-2005 P2703BAG ELM36400EA

    Untitled

    Abstract: No abstract text available
    Text: シングル N チャンネル MOSFET ELM36400EA-S •概要 ■特長 ELM36400EA-S は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=7A ・ Rds on < 27mΩ (Vgs=10V) ・ Rds(on) < 40mΩ (Vgs=4.5V)


    Original     		PDF ELM36400EA-S AUG-12-2005 P2703BAG

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM36400EA-S •General description ■Features ELM36400EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 40mΩ (Vgs=4.5V)


    Original     		PDF ELM36400EA-S ELM36400EA-S AUG-12-2005 P2703BAG

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM36400EA-S •General description ■Features ELM36400EA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 27mΩ (Vgs=10V) Rds(on) < 40mΩ (Vgs=4.5V)


    Original     		PDF ELM36400EA-S ELM36400EA-S AUG-12-2005 P2703BAG