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    P45N Search Results

    P45N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP45N06VUK-E1-AY Renesas Electronics Corporation Nch Single Power MOSFET 60V 45A 9.6mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation
    NP45N06VUK-E2-AY Renesas Electronics Corporation Nch Single Power MOSFET 60V 45A 9.6mohm MP-25ZP/TO-263 Automotive Visit Renesas Electronics Corporation
    NP45N06PUK-E2-AY Renesas Electronics Corporation Nch Single Power MOSFET 60V 45A 9.6mohm MP-3ZP/TO-252 Automotive Visit Renesas Electronics Corporation
    NP45N06PUK-E1-AY Renesas Electronics Corporation Nch Single Power MOSFET 60V 45A 9.6mohm MP-3ZP/TO-252 Automotive Visit Renesas Electronics Corporation
    NP45N06VDK-E1-AY Renesas Electronics Corporation 60 V - 45 A - N-channel Power MOS FET, MP-3ZP, /Embossed Tape Visit Renesas Electronics Corporation
    SF Impression Pixel

    P45N Price and Stock

    Renesas Electronics Corporation NP45N06VUK-E1-AY

    MOSFET N-CH 60V 45A TO263-3
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    DigiKey NP45N06VUK-E1-AY Digi-Reel 12,150 1
    • 1 $1.68
    • 10 $1.134
    • 100 $1.68
    • 1000 $0.60247
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    NP45N06VUK-E1-AY Cut Tape 12,150 1
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    • 1000 $0.60247
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    NP45N06VUK-E1-AY Reel 10,000 2,500
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    Avnet Americas NP45N06VUK-E1-AY Reel 18 Weeks 2,500
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    Mouser Electronics NP45N06VUK-E1-AY 2,224
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    Renesas Electronics Corporation NP45N06VDK-E1-AY

    MOSFET N-CH 60V 45A TO252
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    DigiKey NP45N06VDK-E1-AY Digi-Reel 7,430 1
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    NP45N06VDK-E1-AY Cut Tape 7,430 1
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    NP45N06VDK-E1-AY Reel 2,500 2,500
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    Avnet Americas NP45N06VDK-E1-AY Reel 18 Weeks 2,500
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    Mouser Electronics NP45N06VDK-E1-AY 4,855
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    Avnet Silica NP45N06VDK-E1-AY 20 Weeks 2,500
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    Renesas Electronics Corporation NP45N06PUK-E1-AY

    MOSFET N-CH 60V 45A TO263
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    DigiKey NP45N06PUK-E1-AY Cut Tape 6,401 1
    • 1 $2.24
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    NP45N06PUK-E1-AY Digi-Reel 6,401 1
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    NP45N06PUK-E1-AY Reel 6,400 800
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    Avnet Americas NP45N06PUK-E1-AY Reel 18 Weeks 1,600
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    Mouser Electronics NP45N06PUK-E1-AY 2,399
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    STMicroelectronics STP45NF06

    MOSFET N-CH 60V 38A TO220AB
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    DigiKey STP45NF06 Tube 2,052 1
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    Avnet Americas STP45NF06 Tube 26 Weeks 2,000
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    Mouser Electronics STP45NF06 1,653
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    Newark STP45NF06 Bulk 1,053 1
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    STMicroelectronics STP45NF06 1,645 1
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    Bristol Electronics STP45NF06 950
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    TME STP45NF06 246 1
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    • 10000 $0.515
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    Avnet Silica STP45NF06 17 Weeks 50
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    EBV Elektronik STP45NF06 50 27 Weeks 50
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    PanJit Group PJP45N06A_T0_00001

    60V N-CHANNEL ENHANCEMENT MODE M
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    DigiKey PJP45N06A_T0_00001 Tube 1,870 1
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    Ozdisan Elektronik PJP45N06A_T0_00001
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    Find more P45N price and stock on Findchips.com

    P45N Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P45N02 Intersil 45A, 20V, 0.022 ?, N-Channel Logic Level Power MOSFETs Original PDF
    P45N02LD Niko Semiconductor 25V 45A N-channel logic level enhancement mode field effect transistor Original PDF
    P45N02LDG Niko Semiconductor N-Channel Logic Level Enhancement FET Original PDF
    P45N02LSG Niko Semiconductor N-Channel Logic Level Enhancement FET Original PDF
    P45N02LTG Niko Semiconductor N-Channel Logic Level Enhancement FET Original PDF
    P45N02LV Niko Semiconductor 25V 10A P-channel logic level enhancement mode field effect transistor Original PDF
    P45N03LTG Niko Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

    P45N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P45N02LD

    Abstract: niko p45n02ld dpak DIODE niko p45n02ld equivalent
    Text: P45N02LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P45N02LD O-252 P45N02LD" MAY-24-2001 P45N02LD niko p45n02ld dpak DIODE niko p45n02ld equivalent

    STP45NE06ST

    Abstract: P45NE06 P45NE06FP
    Text: P45NE06 P45NE06FP  N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P45NE06 ST P45NE06FP 60 V 60 V < 0.028 Ω < 0.028 Ω 45 A 25 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.022 Ω


    Original     		PDF STP45NE06 STP45NE06FP O-220/TO-220FP P45NE06 P45NE06FP STP45NE06ST P45NE06 P45NE06FP

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    P45N02LS

    Abstract: NIKO-SEM SM-150 diode P45N02LSG p45n02l P45N02
    Text: NIKO-SEM P45N02LSG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-263 D2PAK Lead Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P45N02LSG O-263 Temperat3-2004 AUG-13-2004 P45N02LS NIKO-SEM SM-150 diode P45N02LSG p45n02l P45N02

    P45N03LTG

    Abstract: P45N03L p45n03
    Text: P45N03LTG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P45N03LTG O-220 P45N03LTG" AUG-13-2004 P45N03LTG P45N03L p45n03

    P45N02LDG

    Abstract: Niko Semiconductor p45n02ldg P45N02LD dpak code Niko Semiconductor P45N02 Field Effect Transistor SM-150 diode TO252
    Text: P45N02LDG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P45N02LDG O-252 Temperatu04 Sep-02-2004 P45N02LDG Niko Semiconductor p45n02ldg P45N02LD dpak code Niko Semiconductor P45N02 Field Effect Transistor SM-150 diode TO252

    P45N10

    Abstract: STP45N10 STP45N10FI P45N10FI
    Text: P45N10 P45N10FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST P45N10 ST P45N10F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.035 Ω < 0.035 Ω 45 A 24 A TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP45N10 STP45N10FI P45N10 P45N10F 100oC O-220 ISOWATT220 P45N10 STP45N10 STP45N10FI P45N10FI

    DC MOTOR CONTROL curcuit

    Abstract: res 0207 F-ZTAT MAT-4 TQFP80E Nippon capacitors TOP MARK H4B
    Text: REJ09B0310-0100 16 H8S/2125 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2125 Rev.1.00 Revision Date: Sep. 21, 2006 R4F2125 R4P2125 Rev. 1.00 Sep. 21, 2006 Page ii of xxxviii Keep safety first in your circuit designs!


    Original     		PDF REJ09B0310-0100 H8S/2125 16-Bit H8S/2100 H8S/2125 R4F2125 R4P2125 nonflamma730-6071 DC MOTOR CONTROL curcuit res 0207 F-ZTAT MAT-4 TQFP80E Nippon capacitors TOP MARK H4B

    p45nf06

    Abstract: P45NF 7433 diagram nor gate 7433 P45NF0 STP45NF06 B45n STB45NF06 JULY2010 230v to 12v transformer
    Text: STB45NF06 P45NF06 N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type VDSS RDS on ID P45NF06 60 V <0.028 Ω 38 A STB45NF06 60 V <0.028 Ω 38 A • Exceptional dv/dt capability ■ Standard threshold drive ■ 100% avalanche tested


    Original     		PDF STB45NF06 STP45NF06 O-220, O-220 p45nf06 P45NF 7433 diagram nor gate 7433 P45NF0 STP45NF06 B45n STB45NF06 JULY2010 230v to 12v transformer

    p45nf06

    Abstract: P45NF STP45NF06 B45NF06 STB45NF06T4 P45NF0 STB45NF06 transistor tl 187 A 107 transistor
    Text: P45NF06 STB45NF06 N-CHANNEL 60V - 0.022Ω - 38A TO-220/D2PAK STripFET II MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID P45NF06 STB45NF06 60 V 60 V < 0.028 Ω < 0.028 Ω 38 A 38 A • ■ ■ ■ TYPICAL RDS(on) = 0.022Ω


    Original     		PDF STP45NF06 STB45NF06 O-220/D2PAK O-220 p45nf06 P45NF STP45NF06 B45NF06 STB45NF06T4 P45NF0 STB45NF06 transistor tl 187 A 107 transistor

    microprocessor 8086 block diagram

    Abstract: powersupplyrelated HFD23 HFD27 REJ09B0403-0200 RSN 315 H 42 1117 3.3 GSM modem M10 ix 3368 LADR2
    Text: REJ09B0403-0200 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2472, H8S/2463, H8S/2462 Group


    Original     		PDF REJ09B0403-0200 H8S/2472, H8S/2463, H8S/2462 16-Bit H8S/2400 H8S/2472 H8S/2463 H8S/2462 R4F2472 microprocessor 8086 block diagram powersupplyrelated HFD23 HFD27 REJ09B0403-0200 RSN 315 H 42 1117 3.3 GSM modem M10 ix 3368 LADR2

    IC ax 2008 circuit diagram

    Abstract: ic cir 2272 H8S/300 pec 730 1. Mobile Computing block diagram 8086 convertion from decimal to binary program ABI Electronics addressing modes 8086 FC59 FLSR 25 ID indicator
    Text: REJ09B0462-0100 16 H8S/2112R Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2112R R4F2112R All information contained in this material, including products and product specifications at the time of publication of this material, is subject to change by


    Original     		PDF REJ09B0462-0100 H8S/2112R 16-Bit H8S/2100 H8S/2112R R4F2112R IC ax 2008 circuit diagram ic cir 2272 H8S/300 pec 730 1. Mobile Computing block diagram 8086 convertion from decimal to binary program ABI Electronics addressing modes 8086 FC59 FLSR 25 ID indicator

    F946

    Abstract: Equivalent tlp 759 f935 pec 730 PH5N 8086 convertion from decimal to binary program addressing modes 8086 FE3A GSM modem M10 IC ax 2008 circuit diagram
    Text: REJ09B0451-0100 16 H8S/2112 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2112 R4F2112 All information contained in this material, including products and product specifications at the time of publication of this material, is subject to change by


    Original     		PDF REJ09B0451-0100 H8S/2112 16-Bit H8S/2100 H8S/2112 R4F2112 F946 Equivalent tlp 759 f935 pec 730 PH5N 8086 convertion from decimal to binary program addressing modes 8086 FE3A GSM modem M10 IC ax 2008 circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual µPD789407A, 789417A Subseries 8-Bit Single-Chip Microcontrollers µPD789405A µPD789406A µPD789407A µPD789415A µPD789416A µPD789417A µPD78F9418A Document No. U13952EJ2V0UM00 2nd edition Date Published July 2001 N CP(K) 1999 Printed in Japan


    Original     		PDF PD789407A, 89417A PD789405A PD789406A PD789407A PD789415A PD789416A PD789417A PD78F9418A U13952EJ2V0UM00

    ELM32430LA

    Abstract: p45n02ldg
    Text: 单 N 沟道 MOSFET ELM32430LA-S •概要 ■特点 ELM32430LA-S 是 N 沟道低输入电容，低工作电压， •Vds=25V 低导通电阻的大电流 MOSFET。 ·Id=45A ·Rds on < 28mΩ (Vgs=10V) ·Rds(on) < 30mΩ (Vgs=7V) ■绝对最大额定值 项目


    Original     		PDF ELM32430LA-S P45N02LDG O-252 Sep-02-2004 ELM32430LA p45n02ldg

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32430LA-S •General description ■Features ELM32430LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=45A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=7V)


    Original     		PDF ELM32430LA-S ELM32430LA-S P45N02LDG O-252 Sep-02-2004

    p45nf06

    Abstract: P45NF STB45NF06 STP45NF06
    Text: P45NF06 STB45NF06 N-channel 60V - 0.022Ω - 38A TO-220/D2PAK STripFETTM II Power MOSFET General features Type VDSS RDS on ID P45NF06 60V <0.028Ω 38A STB45NF06 60V <0.028Ω 38A • Exceptional dv/dt capability ■ Standard threshold drive ■ 100% avalanche tested


    Original     		PDF STP45NF06 STB45NF06 O-220/D2PAK O-220 STP45NF0erein p45nf06 P45NF STB45NF06

    70F3482

    Abstract: TENC81 70F3933 70F3936 PD70F3356 CNM 1490 DF703 3N32 PD70F3368 GP 503
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF V850E/SK3-H FA-176GM-GAR-B) U19201EJ3V0UD 70F3482 TENC81 70F3933 70F3936 PD70F3356 CNM 1490 DF703 3N32 PD70F3368 GP 503

    F2472VBR34V

    Abstract: HFD23 HFD27 MRB 2045 BT 808 600 REJ09B0403-0100 Nippon capacitors ad0d13
    Text: REJ09B0403-0100 16 H8S/2472 Group,H8S/2462 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2400 Series H8S/2472 H8S/2462 Rev.1.00 Revision Date: Mar. 12, 2008 R4F2472 R4F2462 Rev. 1.00 Mar. 12, 2008 Page ii of xIviii Notes regarding these materials


    Original     		PDF REJ09B0403-0100 H8S/2472 H8S/2462 16-Bit H8S/2400 R4F2472 R4F2462 F2472VBR34V HFD23 HFD27 MRB 2045 BT 808 600 REJ09B0403-0100 Nippon capacitors ad0d13

    P45N02LD

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32430LA-S •General description ■Features ELM32430LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=25V Id=45A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 30mΩ (Vgs=7V)


    Original     		PDF ELM32430LA-S ELM32430LA-S P45N02LDG O-252 Sep-02-2004 P45N02LD

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: 8086 convertion from decimal to binary program Nippon capacitors nec 1430
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF H8S/2112R REJ09B0462-0200 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 8086 convertion from decimal to binary program Nippon capacitors nec 1430

    R4F2113

    Abstract: r4f2113nft PJ4N P237T P-LFBGA-176 H8S 2377 BBR13 R4F2113NBG
    Text: User's Manual H8S/2113 Group 16 User’s Manual: Hardware Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series H8S/2113 R4F2113 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is


    Original     		PDF H8S/2113 16-Bit H8S/2100 R4F2113 R01UH0179EJ0100 R4F2113 r4f2113nft PJ4N P237T P-LFBGA-176 H8S 2377 BBR13 R4F2113NBG

    HFD23

    Abstract: HFD27 Nippon capacitors
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF howev86> H8S/2153 REJ09B0384-0300 HFD23 HFD27 Nippon capacitors

    78F9418

    Abstract: No abstract text available
    Text: NEC User’s Manual Aî PD789407A, 789417A Subseries 8-Bit Single-Chip Microcontrollers /¿PD789405A /¿PD789406A /¿PD789407A ¿¿PD789415A juPD789416A juPD789417A juPD78F9418A Document No. U13952EJ1V0UM00 1st edition Date Published March 1999 N CP(K)


    OCR Scan     		PDF APD789407A, 89417A PD789405A PD789406A PD789407A PD789415A juPD789416A juPD789417A juPD78F9418A U13952EJ1V0UM00 78F9418