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    P5504ED Search Results

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    P5504ED Price and Stock

    UMW P5504EDG

    MOSFET P-CH 40V 50A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P5504EDG Reel 2,500
    • 1 -
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    • 10000 $0.22917
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    P5504EDG Digi-Reel 1
    • 1 $0.77
    • 10 $0.516
    • 100 $0.77
    • 1000 $0.25578
    • 10000 $0.25578
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    P5504EDG Cut Tape 1
    • 1 $0.77
    • 10 $0.516
    • 100 $0.77
    • 1000 $0.25578
    • 10000 $0.25578
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    P5504ED Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P5504ED Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF
    P5504EDG Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF

    P5504ED Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nikos

    Abstract: P5504ED nikos transistor P5504 niko-sem NIKOS Field Effect Transistor p-Channel Logic Level Enhancement Mode field effect transistor "Field Effect Transistor" 32uaa
    Text: P-Channel Logic Level Enhancement NIKO-SEM P5504ED Mode Field Effect Transistor Preliminary TO-252 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 55mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P5504ED O-252 May-12-2004 nikos P5504ED nikos transistor P5504 niko-sem NIKOS Field Effect Transistor p-Channel Logic Level Enhancement Mode field effect transistor "Field Effect Transistor" 32uaa

    P5504EDG

    Abstract: P5504EDG equivalent NIKO-SEM P5504EDG p5504edg Niko-Sem TO-252 P5504 nikosem niko-sem
    Text: NIKO-SEM P5504EDG P-Channel Logic Level Enhancement TO-252 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -40V 55mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P5504EDG O-252 AUG-19-2004 P5504EDG P5504EDG equivalent NIKO-SEM P5504EDG p5504edg Niko-Sem TO-252 P5504 nikosem niko-sem

    P5504EDG

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)


    Original     		PDF ELM32403LA-S ELM32403LA-S P5504EDG O-252 AUG-19-2004 P5504EDG

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    p2003bdg

    Abstract: p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17
    Text: Issue Number | 002 21 July 2009 New Product Announcement MOSFETs address LCD TV and monitor backlighting Diodes Incorporated has introduced 15 MOSFETs tailored to the needs of power management in LCD backlighting, DC motor control and DC-DC converters. These MOSFETs have been


    Original     		PDF DMN3024LSD DMN3024LSS DMN2027LK3 DMP3025LK3 DMN3020LK3 DMN3024LK3 DMN4009LK3 DMN4015LK3 DMN4030LK3 DMN4036LK3 p2003bdg p1504bdg P3003EDG P6006BD P5504EDG P5504EDG "cross reference" FDS6900AS Cross Reference P0804BD P2804BDG cross reference zxmp6A17

    P70N02LDG

    Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
    Text: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG


    Original     		PDF O-263 P45N02LSG P45N03LTG P75N02LSG P75N02LTG P0903BSG P0903BTG P3055LSG P3055LTG P50N03LSG P70N02LDG p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32403LA-S •General description ■Features ELM32403LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-8A Rds(on) < 55mΩ (Vgs=-10V) Rds(on) < 94mΩ (Vgs=-4.5V)


    Original     		PDF ELM32403LA-S ELM32403LA-S P5504EDG O-252 AUG-19-2004

    ELM32403LA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM32403LA-S •概要 ■特点 ELM32403LA-S 是 P 沟道低输入电容，低工作电压， 低导通电阻的大电流 MOSFET。 •Vds=-40V ·Id=-8A ·Rds on < 55mΩ (Vgs=-10V) ·Rds(on) < 94mΩ (Vgs=-4.5V) ■绝对最大额定值


    Original     		PDF ELM32403LA-S P5504EDG O-252 AUG-19-2004 ELM32403LA

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM32403LA-S •概要 ■特長 ELM32403LA-S は低入力容量 低電圧駆動、 低 ・ Vds=-40V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-8A ・ Rds on < 55mΩ (Vgs=-10V) ・ Rds(on) < 94mΩ (Vgs=-4.5V)


    Original     		PDF ELM32403LA-S P5504EDG O-252 AUG-19-2004